BFT2 Search Results

BFT28

Contextual Info: BFT28 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)

BFT25

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BFT25 PINNING NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF

Contextual Info: SO T2 3 BFT25A NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up

NXP MARKING 11* 3PIN

Contextual Info: SO T2 3 BFT25A NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up

BFT25

Abstract: bft25 transistor
Contextual Info: N AMER P H I L I P S / D I S C R E T E ^53^31 o o ia is i b 'l BSE D J BFT25 T - 3 I -|7 N-P-N H.F. WIDEBAND TRANSISTOR N-P-N transistor in a plastic SOT-23 envelope, primarily intended for use in u.h.f. low power amplifiers in thick and thin-film circuits, such as in pocket phones, paging systems, etc. The transistor features

Contextual Info: SILICON EPITAXIAL NPN TRANSISTOR BFT29 / BFT30 / BFT31 • Hermetic TO-18 Metal Package • Designed For General Purpose Amplifiers, and Audio Driver Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

TS142

Abstract: BFT25
Contextual Info: Philips Sem iconductor! 1 7 1 1 0 a a b □ D b 'ÌB g b ^ 3 • P H IN _ _ P r o ç U æ t^ jr e c fflc a ^ NPN 2 GHz wideband transistor ^ BFT25 PINNING DESCRIPTION NPN transistor in a plastic SOT23 envelope. It is primarily intended for use in RF low power amplifiers, such as in

bcx40

Contextual Info: Medium Power Amplifiers and Switches TYPE POLA­ CASE NO. RITY BCW97 BCX25 BCX26 BCX40 BCX45 BCX46 BCX47 BCX48 BCX49 BCX50 BCX60 BCX73 BCX74 BCX75 BCX76 BFR10 BFR11 BFR18 BFR19 BFR20 BFR21 BFR22 BFR23 BFR24 BFR41 BFR77 BFR79 BFS92 BFS93 BFS94 BFS95 BFT29 BFT30

BFS36

Abstract: BFS36A BFS37 BFS37A BFS38 BFS38A BFS39 BFS40 BFS42 BFS43
Contextual Info: MICRO-E SILICO N PLANAR LOW -LEVEL TR A N SISTO R S Designed for lo w level am plification and lo w noise applications Ratings and Characteristics at 25°C ambient temperature VcE sat at Ic Type n -p-n BFT27 B FS3 6 B FS3 6A p -n -p B FS3 7 B F S3 7 A = 10 mA

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 U.SA FAX: (973) 376-8960 BFT28 BFT28A BFT28B BFT28C SILICON PNP HIGH VOLTAGE TRANSISTOR JEDEC TO-39 CASE MAXIMUM RATINGS(Tc-25°C unless otherwise noted) BFT28B • BFT28A

BFT29X

Contextual Info: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Philips FA 291

Abstract: ADB 646 BFT24 8891 702 P TRANSISTOR C 547 transistor
Contextual Info: b b i a i B l 0Q3BDÛ7 E l l M A p x ^roductspecjflcati^ Philips Semiconductors ^ NPN 2 GHz wideband transistor BFT24 N AMER PHILIPS/DISCRETE DESCRIPTION b^E D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

TRANSISTOR C 557 B

Abstract: BFT25 transistor 1548 b
Contextual Info: bbS3T31 Philips Sem iconductors Q0E?53bD bTS ^BAPX - N AUER P H I L I P S / D I S C R E T E Product specification b?E ]> NPN 2 GHz wideband transistor DESCRIPTION c BFT25 PINNING NPN transistor in a plastic SO T23 envelope. PIN It Is primarily intended for use in RF

BFT25A

Abstract: MSB003
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 December 1997 Philips Semiconductors Product specification NPN 5 GHz wideband transistor FEATURES BFT25A PINNING • Low current consumption

BFQ161

Abstract: SOT37
Contextual Info: 57 RF/Microwave Devices RF Wideband Transistors cont. Type No. BFS25A BFS505 BFS520 BFS540 BFT24 BFT25 BFT25A BFT92 BFT92AW BFT93 BFT93AW BFW16A BFW17A BFW30 BFW92 BFW92A BFW93 BFY90 Ratings M lc * Characteristics Polarity Package Outline Curve No. VcEO

bft2

Contextual Info: 1389963 CENTRAL SEMICONDUCTOR ICENTRAL 92D 00358 T = - 3 3 - SEMICONDUCTOR - Cvi: •' fcü* f BFT28 BFT28A BFT28B BFT28C SILICON PNP HIGH VOLTAGE TRAN SI STO R S Eïlig@Blgi £t©P € @ ? p . Cesifral SiiiisQ sid ystor Corp. Central semiconductor Corp.

BFT25A

Abstract: MCD113 MCD110 RF POWER TRANSISTOR NPN
Contextual Info: BFT25A NPN 5 GHz wideband transistor Rev. 04 — 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up

BFT28B

Abstract: BFT28 gg2u
Contextual Info: P ow er Transistors File Num ber 815 HARRI S S E M I C O N D BFT28, BFT28A, BFT28B, BFT28C S E CT OR 27E J> • 43D2271 O G S ü m D HHAS 1 Silicon P-N-P High-Voltage Transistors Fo r High-Speed S w itching and L in e a r-A m p lifie r A p p lica tio n s in M ilita ry , In dustrial and C om m ercial Equip.-nent

c 879 transistor

Abstract: BFT24 t 326 Transistor 702 P TRANSISTOR
Contextual Info: Product specification Philips Sem iconductors Ê= NPN 2 GHz wideband transistor PHILIPS INTERNATIONAL 5LE • D BFT24 B FT24 5 7110fl5b O G M S ^ b TMT « P H I N PINNING DESCRIPTION NPN transistor in a plastic SO T37 envelope. DESCRIPTION PIN 1 base It is prim arily intended for use in RF

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

Contextual Info: bbsa^ai DD2S3bD b=i5 N AUER PHILIPS/DISCRETE NPN 2 GHz wideband transistor Philips Semiconductors DESCRIPTION • APX_ Product specification b?E D £ BFT25 PINNING NPN transistor in a plastic SOT23 envelope. PIN It Is primarily intended for use in RF low power amplifiers, such as in

Contextual Info: BFT29X Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products

Contextual Info: BFT29 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 80V 0.48 (0.019) 0.41 (0.016) dia. IC = 1A All Semelab hermetically sealed products