BFW 60 Search Results

BFW92

Contextual Info: SIEMENS BFW 92 NPN Silicon RF Transistor • For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFW 92 BFW 92 Q62702-F321 Pin Configuration

Contextual Info: IN-SYSTEM PROGRAMMABLE SUPERWIDE CPLDS TM ispLSI 5000VE PLDs for a 64-Bit World. BFW II: The Next Generation of SuperWIDE PLDs is Here! The ispLSI 5000VE Family is the second generation of Lattice’s highly successful in-system programmable BFW CPLDs. An innovative SuperWIDE architecture supports

TRANSISTOR BFW 11

Abstract: bfw 10 transistor GPA 76 transistor 2sc 546 transistor bfw 83
Contextual Info: I ESC D • 053SbOS 0004734 2 ■ S I E û ! NPN Silicon RF Broadband Transistor BFW 93 design SIEMENS AKTIENÔESELLSCHAF Not for new CAI - - BFW 93 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance, similar to TO 119 50 B 3 DIN 41867 . The transistor is particularly suitable for use

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

BFW44

Abstract: BFW transistors bfw 10 transistor BFW43
Contextual Info: BFW 43 BFW 44 SILICON PLANAR PNP HIGH V O L T A G E AM PLIFIERS T he BFW 43 and B F W 4 4 are silico n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -1 8 B F W 4 3 and Jedec T O -3 9 (B F W 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.

TRANSISTOR b 772 p

Abstract: bfw 16 transistor BFW 72 TRANSISTOR BFW 16
Contextual Info: E5C D • fi235bQS 0004725 1 H S I E 6 NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF BFW 16 A is an epitaxial NPN silicon planar RF transistor In TO 39 metal case 5 C 3 DIN 41873 intended for general applications up to the GHz range, e.g. for

SO-104

Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5

transistor bfw 88

Abstract: TRANSISTOR BFW 11 f320 2X06 BFW30 Q62702-F320 siemens 230 97 o Transistor C G 774 6-1 BFW 61
Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIE NGE SEL LS CH AF BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 7 2 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers

Contextual Info: ESC D • ûS35bOS Q0Q47SÔ 7 * S I E G ^ NPN Silicon RF Broadband Transistor BFW 30 Not for new design SIEMENS AK TIEN GE SE LL SC HA F BFW 30 is an epitaxial NPN silicon planar RF transistor in a TO 72 case 18 A 4 DIN 41876 , designed for universal application up to the GHz range, e. g. for vertical amplifiers

BFW92

Abstract: TRANSISTOR BFW 11 SQP5 2N6621 349 2110 Q62702-F321 Q68000-A4669 QQG4733 6621 transistor bfw 90
Contextual Info: BSC D • Û235b05 0004731 7 « S I E G NPN Silicon RF Broadband Transistors T c rc\ t -» - SIEMENS AKTIENÛESELLSCHAF T - H 't r BFW 92 2 N 6621 BFW 9 2 is an epitaxial NPN silicon planar RF transistor in a plastic package similar to TO 119 50 B 3 DIN 41 86 7 ; intended for use as RF amplifier up to the GHz range,

BFW93

Abstract: transistor bfw 88 transistor 2sc 546 BFW 72 Q62702-F365 BFW 60
Contextual Info: I ESC D • 053SbOS 0 0 0 4 7 3 4 2 ■ S I E û NPN Silicon RF Broadband Transistor design SIEMENS A K T I E N ô E S E L L S C H A F D Not for new CAI BFW 93 -3 1 -1 5 BFW 9 3 is an epitaxial NPN silicon planar RF transistor in a plastic packageof low capacitance,

CI 74

Abstract: BFW transistors bfw 10 transistor BFW 100 transistor BFW43 BFW44 G3137
Contextual Info: BFW43 BFW44 SILICON PLANAR PNP HIGH VOLTAG E AM PLIFIERS T he EIFW 43 and BFW 44 are silic o n p la n a r e p ita x ia l PNP tra n sisto rs in Jedec T O - 1 8 B F W 4 3 and Jedec T O -3 9 (BFW 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.

BFY90 PHILIPS

Abstract: BFW92 BFW92 sot23 BFS17 BFY90 X3A-BFW92 Philips BFy90 philips bfw92
Contextual Info: Philips Semiconductors _ • bb53S31 0032220 APX 254 Product specification NPN 1 GHz wideband transistor crystal X3A-BFW92 N AMER PHILIPS/DISCRETE DESCRIPTION bRE 3> MECHANICAL DATA Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)

Transistor BFw 92

Abstract: TRANSISTOR BFW 11 BFW92 transistor bfw 88 BFw 94
Contextual Info: BFW 92 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92 Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

din 3141

Abstract: BFW92A transistor bfw 88 bfw 92 bfw 96
Contextual Info: BFW 92 A TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Wide band RF amplifier up to GHz range. Features D High power gain D Low noise figure 3 2 1 BFW92A Marking Plastic case XTO 50 1= Collector; 2= Base; 3= Emitter Absolute Maximum Ratings

TRANSISTOR BFW 11

Abstract: BFW93 C11B
Contextual Info: BFW 93 NPN SILICON TRANSISTOR, EP ITAXIAL PLANAR TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L VHF-UHF applications. Wide band aerial amplifiers Applications VHF-UHF. Am plificateurs fantenne & large bands V CEO 10 V 'c m 100 mA h2iE<!30 mA 25 f j ( 5 0 imA)

Daico Industries da0296

Abstract: DA0296 bfw glass 18DB
Contextual Info: 26E DAICO INDUSTRIES INC BbGMTSD 0QG1541 2 « D A I D T - 7 1 - U - 01 RF IN/OUT DA0296 6 SECTION ATTENUATOR BFW/OUr © 2J> © - PINS 21-37 CONNECTED TO CASE - ^*1^ li J li J <T°"°ÌVIf li (I , Il (I I ^T° I) ll ~ l •40-150 MHz • 30 nSEC SWITCHING SPEED

5000B

Abstract: 5384B ispLSI 5128VE SSTL-2 5128B
Contextual Info: I N - S Y S T E M P R O G R A M M A B L E S u p e r W I D E C P L D s ispMACH 5000B PLDs for a 64-Bit World BFW III: The Third Generation of SuperWIDE PLDs with Improved Performance and Architecture The ispMACH™ 5000B Family is the next generation of

BFW92

Contextual Info: Temic BFW92 S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Applications R F am plifier up to G H z range. Features • High pow er gain • Low noise figure B FW 92 M arking: BFW 92 Plastic case TO 50 1= C ollector; 2= Em itter; 3= Base Absolute Maximum Ratings

BFY90 PHILIPS

Abstract: BFW92 sot23 IEC-134 BFS17 BFW92 BFY90 IEC134 X3A-BFW92 philips bfw92
Contextual Info: P rodu ct specification P h ilip s S em icon du ctors NPN 1 GHz wideband transistor crystal PH IL IP S I N T E R N A T I O N A L SbE X3A-BFW92 711Dfl2b O D M b l l O 7Tb IPHIN M EC H A N IC A L DATA DESCRIPTION Crystal NPN crystal used in BFW 92 SOT37 , BFY90 (TO-72)

transistor bf 184

Abstract: pnp vhf transistor TO50 transistor transistor BF 509 BF 914 transistor BF 184 transistor transistor BF 451
Contextual Info: m ils Uli S.A. TYPE NPN PNP BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF BF 115 167 173 173S 180 181 184 185 198 199 200 214 215 240 241 254 255 BF BF BF BF BF 6 BF BF BF BF 272A 272B 316A 450 451 479 506 509 914 BFX 89 BFY 90 $ BFW 94 2N 918 2N 4957 2N 4958

BFW30

Abstract: BFW 30
Contextual Info: BFW 30 N P N S IL IC O N T R A N S IS T O R , E P IT A X IA L P L A N A R TRANSISTOR NPN S ILIC IU M , PLA N A R E P IT A X IA L W ide band vertical am p lifiers in high speed oscilloscope W ide band aerial am p lifiers Television d istrib u tio n a m p lifiers

BFW92

Abstract: BFW92A
Contextual Info: 1 ?, BFW 92, B FW 92A W ideband N-P-N bipolar silicon R F transistors 02* t , k . 1.2 i T P in o u ts : 1 -B a se , 2- C o lle c to r, ”4 .Î Q .S T ra n s is to r is d e s ig n e d fo r a p p lic a tio n in s a te llite c o m m u n ic a tio n s y s te m s ,

of BFW 13

Abstract: BFS3565 Samwha code BFS3580A0
Contextual Info: Features Simple to handle and inexpensive in price Available in various configurations to conform to the wiring materials in use and the characteristics as required. Absorbs noise effectively because of the impedance over 30 in high frequency band From 10 to 1000MHz .