FI235BQ5 Search Results

bfw 106 c

Abstract: BFW16 Q62702-F319 transistor BFW 10 bfw16a
Contextual Info: E5C D fi235bQ5 Q0047ES 1 H S I E G • NPN Silicon RF Broadband Transistor BFW 16 A SIEMENS AKTIENGESELLSCHAF ^^-'31-2.3 BFW 16 A is an epitaxial NPN silicon planar RF transistor in TO 39 metal case 5 C 3 DIN 41 87 3 intended for general applications up to the GHz range, e.g. for

transistor BD 110

Abstract: Q62702-D905 0437 Q62902-B62 Q62902-B63 transistor BD 524
Contextual Info: ESC D fi235bQ5 0004377 4 m i l E G • NPN Silicon Planar Transistor BD 524 SIEMENS AKTIENGESELLSCHAF 0^377 T -3 asr 0 - BD 524 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41869, sheet 4 . It is particularly intended for use as driver transistor in horizontal

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q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

fototransistor

Contextual Info: SIEMENS GaAs-lnfrarot-Sendediode GaAs Infrared Emitter 5 .8 4 1 6 .5 L 1 6 .00 1 .5 2 5.5 9 1.52 1.29 1.14 .2 .5 4 2.03 JLJ r-. o-i I-“ S lr M « T IRL 80 A in k> m ^C£>W IO 1.52 Anode Voo i ro O T c-j c-i 1.70 1.45 Plastic m arking GE006461 -iko co R = 0 .7 6

Contextual Info: SIEMENS Differential Magneto Resistor FP 412 L 100 t If delivery as tape,separate at punching-points 2) Connections on both sides free of lacquer g p x o 6777 3) Mechanical connections 4) Center—distance of Diff.-System s Approx. weight 0.2 g 2 1.3 pin connection

Contextual Info: SIEMENS Differential Magneto Resistor FP 412 D 250 1 If delive ry a s ta p e , se p a ra te a t p u n ch in g —points 2 ) C on n e ctio n s on both sid e s fre e o f la c q u e r 3 ) M ech a n ica l co n n e c tio n s 4 ) C e n te r - d is ta n c e o f D iff.- S y s t e m s

B32591C1104

Contextual Info: B 32 590 . B 32 594 Metallized Polyester Film Capacitors MKT Coated (Powder Dipped) Standard applications Construction • Dielectric: polyethylene terephthalate (polyester) • Stacked-film technology for lead spacing 7,5 . 15 mm (100 . 400 Vdc);

K4887-K4

Abstract: B25355-K167-K4 ws dvd 290
Contextual Info: MP DC Capacitors Smoothing, Supporting, Discharge B 25 355 High peak-current capability Wide capacitance and voltage range Construction • Self-healing • Paper dielectric • Oil and hard-wax impregnated tubular windings no PCB • Metal-sprayed face ends ensure reliable contacting

Contextual Info: SIEMENS Double Differential Magneto Resistor FP 420 L 90 2 6 fingers on both sides free of lacquer 3) Center-distance between the Oiff.-Systems. Approx. w e ig h t 0.2 g GPX06896 Dimensions in mm Features Typical applications • • • • • • • •

PSB4400P

Abstract: PSB4400-P power supply luna siemens power supply luna 2 siemens Q67000-A6074 pj 75 sx 34 ITP0449J ITP04706 P-DIP-18 P-DSO-20
Contextual Info: bSE D • ÖSBSbüS Ü Ü S n 2 7 S3S « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF Standard Speech Circuit SSC PSB 4400-P;-T Prelim inary Data Bipolar 1C Features • • • • • • • • • • • • Operation down to a DC line voltage of 1.6 V

Contextual Info: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz

Contextual Info: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-60/-70 Prelim inary Inform ation 4 194 304 words by 32-bit organization alternative 8 388 608 w ords by 16-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access time

Contextual Info: SIEMENS Preliminary IC-SPECIFICATION TDA 6060XS, TDA 6060G Multistandard Modulator / PLL gage 1 Contents 2 Functional Description, Application Pin Definition and Function 3 4 Block Diagram Circuit Description 5-10 11 Pinning, Package 12 Absolute Maximum Ratings

Contextual Info: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version

e1414

Abstract: siemens master drive circuit diagram L1152B siemens sda
Contextual Info: SIEMENS Nonvolatile Memory 1-Kbit E2PROM with PC Bus Interface SDA 2516 MOSIC Features • Word-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 128 x 8-bit organization • Supply voltage 5 V • Serial 2-line bus for data input and output (I2C Bus)

44e 402

Contextual Info: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 Advanced Inform ation • • • • • 1 048 576 w ords by 16-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

Contextual Info: SIEMENS TrilithIC BTS 774 Preliminary Data Overview Features • • • • • • • • • • • • • • • • • Quad switch driver Free configurable as bridge or quad-switch Optimized for DC motor management applications Ultra low /?DS0N @ 25 °C:

0s35

Abstract: b17 zener diode
Contextual Info: SIEMENS HITFET BTS 141 Smart Lowside Power Switch Features Product Summary • Logic Level Input Drain source voltage ^DS 60 V • Input Protection ESD On-state resistance ^DS(on) 28 m£2 • Thermal Shutdown Current limit 25 A • Overload protection Nominal load current

bss149

Contextual Info: BSS 149 I nf ine on technologies SIPMOS Small-Signal Transistor • • • • • • • VDS 200 V 0.35 A ^DS on 3.5 Cl N channel Depletion mode High dynamic resistance Available grouped in VQSOh) ID Type Ordering Code Tape and Reel Information Pin C onfigu ration Marking

Contextual Info: SIEMENS BUZ 11 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b ^DS on Package Ordering Code BUZ 11 A 50 V 26 A 0.055 a TO-220 AB G67078-S1301 -A3 Maximum Ratings Parameter Symbol Continuous drain current

Contextual Info: SIEMENS BUZ 312 SIPMOS Power Transistor o • N channel • Enhancement mode V5I05'S6 1 • Avalanche-rated 3 Pin 1 Pin 2 Type Vbs b BUZ 312 1000 V 6 A Pin 3 D G S flbS on Package Ordering Code 1.5 £2 T O -2 18 A A C67078-S3129-A2 Maximum Ratings Parameter

RXTNB 2

Contextual Info: PXB 4220 SIEM ENS 1 1.1 1.2 1.3 1.4 1.5 1.6 O v e rv ie w .7 Features. 9