BFX 66 Search Results

BFX89

Abstract: Transistor BFX 90 BFX 514 Q62702-F296 Q 371 Transistor 2sc 684
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù T ~ Z 'tï NPN Silicon Transistor for RF Broadband Amplifier BFX 89 - SIEMENS AKTIENGESELLSCHAF BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

Transistor BFX 90

Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor
Contextual Info: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general

SO-104

Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
Contextual Info: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5

3004x

Abstract: Transistor BFX 59 634 transistor bfx 63 63310-A BFX55 D-10 Q60206-X55 Transistor BFX 90 BFX 79
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j / 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS AKTIENÖESELLSCHAF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

3004x

Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Contextual Info: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for

HBF4727A

Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Contextual Info: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product

BFP29

Abstract: BFP35A BFQ77 BFP17 BFQ57 BFQ58 BFT65 BFQ 58 SOT-89 smd marking CF BFT99A
Contextual Info: SIEMENS AKTIENGESELLSCHAF 03E I Bi ê23SbO S QDlSb7M T M S IE G • : Silicon Bipolar Transistors M etal C eram ic Packages Max. r atings ^CEO Ic Pto. V mA mW Chara steristic:s at Ta = 25° C F fj f Ic VcE GHz dB mA V GHz N N N 16 16 20 35 30 35 450 450 700

BFX85

Abstract: 8FX85 BFX84 BFX86 F016 ferranti
Contextual Info: »* <JS t ^NPN*' BFX84 BFX85 BFX86 ' Silicon planar medium power transistors 4 ZeTeX T h e B FX84 series o f tra n s is to rs is d esig n ed f o r sm all a n d m e d iu m sig nal, lo w and m e d iu m p o w e r a m p lific a tio n s a n d fo r g e n e ra l p u rp o se

transistor BC 584

Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548
Contextual Info: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 | TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

BFX85

Abstract: BFX84 D1230 b9036 B694 m0406 btS3131 transistor BFX85 8FX84 GE-77
Contextual Info: N AUER PHILIPS/DISCRETE LIE T> m bbSBTBl 002775Ô 445 • APX BFX84 BFX85 I SILICON PLANAR EPITAXIAL TRANSISTORS N P N transistors in T O -3 9 m etal envelopes fo r general purpose indu strial ap plications. Q U IC K R E F E R E N C E D A T A BFX84 BFX85 Collector-base voltage open em itter

100 GEA

Abstract: 0/MCU 100 GEA
Contextual Info: 2C and 2G Series— Short Type Connectors T his short series is ideal where space lim itation does not allow the use of a norm al-sized connector. 2C series connectors do not m ate w ith S series o r B series connectors. 2C series short-type connectors are available only in size 2.

AC125K

Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Contextual Info: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T

KT 819 transistor

Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e

Diode GFK

Abstract: marking code BEV SMCJ20CA SMCJ33CA GDE 85 GFK 77 SMCJ54CA smcj30a SMCJ12A SMCJ5.0A
Contextual Info: SMCJ5.0A thru SMCJ170CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR STAND-OFF VOLTAGE 5.0 TO 170 VOLTS 1500 Watt Peak Pulse Power SMC/DO-214AB .108 2.75 .128(3.25) .220(5.59) .245(6.22) .260(6.60) .280(7.11) .006(.152) .012(.305) .079(2.00) .103(2.62) .002(.051)

Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER SEMICONDUCTOR Features • • • • • • • 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR POWER SEMICONDUCTOR Features • • • • • • • 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available

bfm 2 TERMINAL DIODE

Abstract: Diode BFX 514 GFX DIODE Diode GFK diode gde 78 Gex DIODE Diode GFK 42 on 440 gex diode GEZ DIODES GFK 77
Contextual Info: Silicon Avalanche Diodes 1500W Surface Mount Transient Voltage Supressors RoHS SMCJ Series FEATURES • RoHS compliant • For surface mounted applications in order to optimize board space • Low profile package • Built-in strain relief • Glass passivated junction

marking code BFK

Abstract: bgg marking code BEM 45 marking bgp marking ghm SMCJ10 SMCJ11 SMCJ12 SMCJ13 SMCJ14
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability

BFK 79

Abstract: SMCJ30CA 129 gez bex d 208
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability

SMCJ170A

Abstract: bfk 5a
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

129 gez

Abstract: SMCJ170A
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic

marking code BFK

Abstract: marking code BEV marking code BEM 35 marking bgz bgg marking code GFM MARKING marking BFG marking code BEM marking code BEG BEV MARKING
Contextual Info: SMCJ5.0 C A - SMCJ170(C)A 1500W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Features • · · · · · · 1500W Peak Pulse Power Dissipation 5.0V - 170V Standoff Voltages Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability

SMCJ20A

Abstract: SMCJ170A gdz 79 SMCJ30A SMCJ90A 514 bfp smcj15a
Contextual Info: LITE-ON SEMICONDUCTOR SMCJ SERIES SURFACE MOUNT UNIDIRECTIONAL AND BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS STAND-OFF VOLTAGE - 5.0 to 170 Volts POWER DISSIPATION - 1500 WATTS FEATURES Rating to 200V VBR For surface mounted applications Reliable low cost construction utilizing molded plastic