BTS3131 Search Results

marking 3t1

Abstract: marking S3 amplifier RV2833B5X
Contextual Info: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.

BUZ15

Abstract: transistor buz IEC134 t03 package transistor pin dimensions
Contextual Info: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies

Contextual Info: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching

Contextual Info: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

PHS2403

Abstract: diode t319 IEC134 PHS2401 PHS2402 PHS2404
Contextual Info: _ N ANER PHILIPS/DISCRETE _ GbE D PHS2401_ SERIES bbS3T31 0011701 fl • ■ T - O ' l - I 7“ ULTRA FAST RECOVERY DOUBLE RECTIFIERS The PHS2401 series devices are glass-passivated alloy bonded high-efficiency silicon double rectifier

BYV118-35

Abstract: M3174 BYV118 M3178
Contextual Info: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and

1N3913

Abstract: 1N3909 1N3910 1N3911 1N3912
Contextual Info: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.

TAG thyristor

Abstract: LM267S thyristor tag a2 thyristor TAG 103 BT150 BT thyristor tag 453 400 thyristor BT 200
Contextual Info: I I N AUER PHILIPS/DISCRETE bTE D • bbS3T31 00E7E^3 T35 ■ APX b IlbU THYRISTORS Glass-passivated th y ris to r in T 0 -2 2 0 A B envelope, fe a turin g sensitive gate triggering as lo w as 200 ^ A . P a rtic u la rly suitable in applications where high fatigue stresses due to therm al cyclin g and repeated

U1020

Contextual Info: N AflER P H I L I P S / D I S C R E T E 25E D • bbS3T31 0032331 1 ■ bY32y SERIES A _ T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in

Contextual Info: N AMER PHILIPS/DISCRETE bbS3*131 0033435 3 • 35E D A BYH29F SERIES ~7Z03^y ULTRA FAST RECOVERY ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in SOT-186 full-pack envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and softrecovery characteristic. Their electrical isolation makes them ideal fo r mounting on a common heatsink

Contextual Info: N AMER PHILIPS/DISCRETE HSE D bb53T31 QDEiaib METAL OXIDE VARISTORS _ i z . ~ i Zinc Oxide Voltage Dependent Resistor U.L. File #E98144 VDE File #14480-4790-1001/A1F DESCRIPTION GENERAL V oltage D(ependent) R(esistor)-varistors-have

M2303

Abstract: M027 qd223 M3-338 BY249F M2296
Contextual Info: N AMER PHILIPS/DISCRETE 1:1=53=131 0052353 5 • 25E D BY249F SERIES T -O I-\7 ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended for power rectifier applications. Their electrical isolation makes them ideal for mounting on a common heatsink

Contextual Info: I N AMER PHILIPS/DISCRETE 25E D • . ^— f , bbSBTBl 0052353 5 ■ BY249F SERIES T - O l- \7 _ , [ ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended for power rectifier applications. Their electrical isolation makes them ideal for mounting on a common heatsink

Contextual Info: N AUER PHILIPS/DISCRETE DOEQbSQ T • E5E D PowerMOS transistor Logic Level FET N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,