BFY64 Search Results

BFY64

Abstract: transistor BFY64 A 2039 g
Contextual Info: BFY64 SILICON PLANAR PNP H IG H -C U R R E N T G E N E R A L P UR PO SE T R A N S IS T O R The BFY 64 is a silicon planar epitaxial PNP transistor in .Jedec T Q -3 9 metal case. I t is designed fo r digital and analog applications at current levels up to 500 m A , line driver,

BFY64

Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

BFY640-04

Abstract: bfy640 BFY640 ES
Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

Contextual Info: BFY64CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

2SA1005K

Abstract: BC512 2N3644 2N5383 BC251 LOW-POWER SILICON PNP KT310 BC204B 2N601 2SA1005L
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 MPS3906 MPS3906 MPS3906 NS3906 NTM3906 NTM3906 PET3906 PXT3906 PXT3906 TP5383 YTS3906 2N3906 2N5383 2N5366 2N5366 2N5366 0402 0402 BFY64 2N5367 ~~':5U3~ 25 30 35 40 MPS6533M MMCM2907 MPS6534

Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz

BFY64

Abstract: transistor BFY64
Contextual Info: BFY64 SILICON PLANAR PNP H IG H -C U R R EN T G ENERAL PURPOSE TRANSISTOR The B F Y 64 is a s ilic o n p lanar e p ita x ia l PNP tra n s is to r in Jedec T O -3 9 m eta l case. I t is designed fo r d ig ita l and analog a p p lic a tio n s a t c u rre n t levels up to 5 0 0 m A , lin e d rive r,

BFY64

Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

Contextual Info: BFY640 NPN Silicon Germanium RF Transistor Preliminary data • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications • Outstanding noise figure F = 0.8 dB at 1.8 GHz Outstanding noise figure F = 1 dB at 6 GHZ

Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz

BFY64

Contextual Info: BFY64 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)

BFY64CSM

Contextual Info: BFY64CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

npn transistor high current

Abstract: transistor "micro-x" "marking" 3 BFY640 germanium microwave Micro-X Marking E RF TRANSISTOR NPN MICRO-X low noise Micro-X marking "K"
Contextual Info: BFY640 HiRel NPN Silicon Germanium RF Transistor • HiRel Discrete and Microwave Semiconductor  High gain low noise RF transistor  High maximum stable gain: Gms 24dB at 1.8 GHz   Noise figure F = 0.8 dB at 1.8 GHz Noise figure F = 1.1 dB at 6 GHz

bfy64

Abstract: transistor BFY64 bfx64
Contextual Info: BFY64 HIGH-CURRENT GENERAL PURPOSE TRANSISTOR DESCRIPTION The BFX64 is a silicon planar epitaxial PNP transistor in Jedec TO-39 metal case. It is designed for digital and analog applications at current levels up to 500 mA, line driver, memory applications and

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2n3866s

Abstract: DIODE 69a LM 2N3904CSM 2N3904DCSM 2N3904D LM7805sm 2N3055E LM7808S LCC3 weight bfy82
Contextual Info: M il / Aerospace Division Sem elab HERMETIC SURFACE MOUNT PACKAGES SEMELAB offers seven ceramic package styles intended for use in Space Vehicles, Aircraft and other critical applications all intended for Surface Mount Applications. SOT23 HERMETIC CERAMIC SURFACE MOUNT PACKAGE LCC1

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

IRF5402

Abstract: IRFN540 IRFN630 IRFN530 IRFN640 8YV32-5 W06C 2205-M IRFN733 IRFn342
Contextual Info: MilitaryAerospace Division M ilitary-Aerospace Division ceram ic surface m ount devices and scree ned to m e e t th e m ost severe T 0 2 2 0 c e r a m ic su rface m o u n t devices A surface m o u n t r e p l a c e m e n t for th e p op ular T 0 2 2 0 M e t a l and T 0 2 5 7 package, the T 0 2 2 0 S M

ME0412

Abstract: BC116 bc153 BC154 ME0413 ME0492 BC126 me0411 ME0402 V405A
Contextual Info: M icro - Electronics Sem iconductors PN P Transistors PN P General Purpose Transistors REFER EN C E T A B L E Code o o >> V EBO V BC153 BC154 40 40 5 5 50 160 BCY70 BCY71 BCY72 40 45 25 5 5 5 50 100 50 BFX48 30 5 6 6 5 45 45 25 ME0411 ME0412 ME0413 h FE min.

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP

BSW65

Abstract: BSV12 BSW66 BSS46 BFX98 BFY64 BFX86 BFX87 BFX88 BFY50
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP