BGY145A Search Results

Contextual Info: Philips Semiconductors M bbSBTSl ODBOSAb 3b 2 M APX Preliminary specification V H F am p lifie r m odu le B G Y 145A N AMER P H I L I P S / D I S C R E T E DESCRIPTION b ^ E 1> PINNING -S O T183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile

fx1115

Abstract: vHF amplifier module RF POWER TRANSISTOR NPN vhf rf amplifier module VHF Amplifier Chip power rf
Contextual Info: Philips Semiconductors Preliminary specification VHF amplifier module DESCRIPTION BGY145A PINNING -SOT183A The BGV145Aisa RF amplifier module, designed for use in transminers of mobile communications equipment powered by vehicles with 12.5 V battery supplies.

BGY145A

Abstract: FX1115 vHF amplifier module NPN RF Amplifier
Contextual Info: Preliminary specification Philips Sem iconductors VHF amplifier module BGY145A P IN N IN G - S O T 1 8 3 A D E S C R IP T IO N T h e m odule is a two-stage transistor am plifier and consists of two R F npn transistors m ounted on a ceram ic substrate, to gether with surface

BGY145A

Abstract: FX1115 GG30E philips rf power amplifier module vHF amplifier module 3b2 229
Contextual Info: Philip8_Semiconductore^_ bbSB^Bl QQ3Q2fiti 3 b 2 HIAPX Preliminary specification VHF amplifier module BGY145A N AMER PH I LIPS/DISCRETE DESCRIPTION b*iE 1> PINNING - SOT183A The BGY145A is a RF amplifier module, designed for use in transmitters of mobile communications equipment

FX1115

Abstract: VHF Amplifier Chip BGY145A philips rf power amplifier module
Contextual Info: Preliminary specification Philips Semiconductors VHF amplifier module DESCRIPTION BGY145A PINNING - SOT183A The module is a two-stage transistor amplifier and consists of two R F npn transistors mounted on a ceramic substrate, together with surface mounted components that make up

Contextual Info: RF Power Modules INDEX SELECTION GUIDE GENERAL CONTENTS Page 5 8 12 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.

RF Power Modules

Abstract: BGY47 Philips Semiconductors RF Power Modules BGY145B BGY110E SOT-246 BGY110F "RF Power Modules" GP 132
Contextual Info: Philips Semiconductors RF power modules Type number survey INTRODUCTION In this alphanumeric list we present all RF power modules mentioned in this handbook, together with the most important data. TYPE NUMBER ENVELOPE Vs V f Pl (MHz) (W) Gp (dB) PAGE BGY32

SOT262

Abstract: power amplifier blf278 BLF378 BGY47 321 SOT BGY145 sot183 BGY43 SOT246
Contextual Info: 66 RF/Microwave Devices RF Power MOS Transistors Package Outline Type No. cont. Output Power Sync (W) VDS (V) f (MHz) Power Gain (dB) ^im (dB) >D (mA) 13 r -52 -52 3000 2 x 4600 50 TV TRANSPOSERS (band 3, f = 174-230 MHz, Class A Operation) BLF346 BLF348

BFG87

Abstract: BSF17 BSF17W Philips BFQ bipolar transistor blt81 driver circuit BGY46B BFE505 T119 Transistor BFQ43 bgy132
Contextual Info: Philips Sem iconductors Selection guide Selection list GENERAL For further information, refer to Data Handbook SC08a “R F Bipolar transistors", to Data Handbook SC09 “R F Power Modules”and to Data Handbook SC14 “R F Wideband Transistors, Video Transistors and Modules"

Philips Semiconductors RF Power Modules

Abstract: RF Power Modules Philips Semiconductors Selection Guide BGY110E "RF Power Modules"
Contextual Info: Philips Semiconductors RF power modules Selection guide INTRODUCTION The following tables represent our complete range of RF power modules. VHF modules for mobile transminers f MHz Pl (W) Vs (V) 18 12.5 68 to 88 18 12.5 80 to 108 18 12.5 132 to 156 18 12.5