BH W SOT23 Search Results

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

NE44

Contextual Info: BST82 mm Z e te x G m bH S treitfeld stra ße 19 D -81673 M ünchen T e lefo n: 49 89 4 5 4 9 49 0 Fax: (49) 89 45 4 9 4 9 49 Z e te x pic. Fields N e w Road, C had d erto n , O ldham , O L9 -8 N P , U nited Kingdom . Te lep ho n e: (44)161 -627 5 105 (Sales), (44)161 -627 4 9 6 3 (G eneral Enquiries)

TRANSISTOR bHrt

Abstract: transistor 9a2a ga8c STT3PF20V bhrt transistor a6 s STT3PF20
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET TYPE STT3PF20V • ■ ■ ■ VDSS !ÃW RDS on 1Ã!ÃWÃ5#$W 1Ã!$ÃWÃ5!&W ID !!Ã6 TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE

UAA 190

Abstract: transistor 9a2a STT3PF20V
Contextual Info: STT3PF20V P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET II POWER MOSFET VDSS TYPE STT3PF20V • ■ ■ ■ !ÃW RDS on ID 1Ã!ÃWÃ5#$W !!Ã6 1Ã!$ÃWÃ5!&W TYPICAL RDS(on) = 0.14 W (@4.5V) TYPICAL RDS(on) = 0.20 W (@2.7V) ULTRA LOW THRESHOLD GATE DRIVE

LTN150PG-L03

Abstract: BA61-00780A SUS304-CSP BA41-00452A ltn*150pg BA59-01340A BA81-00691A samsung x25 Exploded View BA75-01449A W19 SOT 23
Contextual Info: This Document can not be used without Samsung s authorization. 이 문서는 삼성전자의 기술자산이므로 승인자만이 사용할 수 있습니다. 8 Exploded View and Mechanical Parts List 8-1 X25 Exploded View and Mechanical Parts List 8-1-1 X25 15" LCD Exploded View

SUS304-CSP

Abstract: lcd 94vo SLD9630TT BCM5788MKFB samsung ba92 LTN154x3 BA99 LTN154X3-L03 PC-GF10 SUS304CSP
Contextual Info: This Document can not be used without Samsung’s authorization. 4 Explorded View and Mechanical Parts List 4-1 X-50 15.4” LCD SENS X-50 (15.4” LCD Explorded View) 4-1 4 This Document can not be used without Samsung’s authorization. 4-2 X-50 15.4” LCD

SWRCH18A

Abstract: 12.1-inch WM3B2200BG ltd121ex1r LTD121EX 00123A BA42-00125A SAMSUNG lcd INVERTER BA81-01193A KUBNKM088A
Contextual Info: 2 Exploded View and Mechanical Parts List 2-1 Exploded View 2-1-1 System Exploded_All Q30 This Document can not be used without Samsung’s authorization. 2-1 2 Exploded View and Mechanical Parts List 2-2 Mechanical Parts List 2-2-1 System Exploded_All Parts List

Contextual Info: Transistors SOT23 B SOT23 Case PNP m iniR eel 4" O rder / " “ X N um ber ' Type 500 pcs. ^ PN P G eneral Purpose BC808-16 73-8081 BC808-25 73-8082 BC808-40 73-8083 m iniBag O rder N um ber 1 00 pcs. R a tin g s i*FE M in -M ax @ Ic VCE Part fj (M Hz) M arking

wm3b2200bg

Abstract: BA41-00452A sic350a EMC6N300 KUBNKM048A 00136A SIC-350A samsung sic- inverter 49lf008a BA61
Contextual Info: - This Document can not be used without Samsung's authorization - 6 6-1 78 MECHANICAL EXPLODED VIEW AND PARTLIST System Overall Exploded View SAMSUNG X06 - This Document can not be used without Samsung's authorization - 6 MECHANICAL EXPLODED VIEW AND PARTLIST

BA81-01580A

Abstract: BA81-01581A PA 66 GF 15 venice 6.2 BA41-00524A MIC2568 BA81 BA59-01318A WM3B2200BG BA41-00520A
Contextual Info: Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st 6-1-1.Expl ode_Vi ew-Sorrento-Assy SAMSUNG X1 < 6 - 1 > Thi s Docum entcan notbe used wi thoutSamsung' s aut hori zati on. 6. Expl oded Vi ew and PartLi st

BA81

Abstract: SMD w35 BCM4401KFB BA59-01557A BA81-01824A LTN154X3-L03 hts541040g9at00 STS304 BA92-03881A samsung ba81
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung’s authorization. 6. MECHANICAL EXPLODED VIEW AND PARTLIST 6-1 System Overall Exploded View 64 SENS R50 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다.

BA 516 diode

Contextual Info: BAV70 SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR COMMON CATHODE BA V 7 0 - ISSUE 2 - JANUARY 1995 PIN CONFIGURATION 1 PARTMARKING DETAIL BAV70- A4 Ai i SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT C ontinuous Reverse Voltage

LTN150XG-L05

Abstract: Al w29 LTN150XG LTN150XG-L05-V RC410M RC410MB HY60 BA41-00569a BA61-01045A BA39-00527A
Contextual Info: - This Document can not be used without Samsung's authorization - 6 6-1 78 MECHANICAL EXPLODED VIEW AND PARTLIST System Overall Exploded View SAMSUNG R45 - This Document can not be used without Samsung's authorization - 6 MECHANICAL EXPLODED VIEW AND PARTLIST

C3604BD-F

Abstract: LTN150XG-L05-G ul1571 wire LTN150PG-L03 LTN150XG LTN150XG-L05 2203-006090 bga nvidia SLB9635TT12 BA59-01751A
Contextual Info: 10. Electrical Partlist Option SEC code 0902-001916 0902-001937 0902-001938 0902-001939 0902-001943 1105-001609 1105-001609 1105-001610 1105-001610 1105-001611 1105-001611 1105-001614 1105-001614 1105-001615 1105-001615 1105-001682 1105-001682 1105-001683

Contextual Info: .^ ,OJTS j Reel = SOOpcs. SOT23 Case PNP BaS = 100PCS* m in i e e l ^ S 2 :> 4 " O rd e r Type -35^ N um ber V . ^ V R a tin g s m i n iB a g O rd e r N um ber k & ld VCEO Ic b ra @Ic fx P a rt isisE il V mA M in -M a x VCE (M H z ) M a rk in g 25V 500m A

Contextual Info: ZXTP2006E6 20V PNP LOW SAT M EDIUM POWER TRANSISTOR IN SOT23-6 SUM M ARY BV CEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packag ed i n t h e SOT23-6 o u t l i n e t h i s n ew l o w saturation 20V PNP transistor offers extrem ely low on state losses m aking it ideal for use in DC-DC circuits

TCS20DLR

Abstract: MARKING LA4
Contextual Info: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND

TCS20DLR

Contextual Info: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 0.011 g typ. Marking Pin Assignment (Top View) GND

Contextual Info: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND

Contextual Info: TCS20DPR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DPR Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole and North-Pole Detection SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND 3

TCS20DPR

Contextual Info: TCS20DPR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DPR Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole and North-Pole Detection SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND 3

Contextual Info: TCS20DPR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DPR Digital Output Magnetic Sensor Feature Push-Pull Output South-Pole and North-Pole Detection SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND 3

Contextual Info: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND

Contextual Info: TCS20DLR TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TCS20DLR Digital Output Magnetic Sensor Feature Open-Drain Output South-Pole and North-Pole Detections SON3-P-0203-1.90 SOT-23F Weight: 11.0 mg typ. Marking Pin Assignment (Top View) GND