BI-DIRECTIONAL N-CHANNEL MOSFET Search Results

Siliconix 511

Contextual Info: SÌ3831DV Vishay Siliconix Bi-Directional P-Ch MOSFET/Power Switch New Product V B* V > Ros (o n (&) ±7 Id W 0 .170 VGg = -4 .5 V ±2.4 0.240 @ VGS = “ 2-5 V ±2,0 & FEATURES • • • • Low rps(on) Symmetrical P-Channel MOSFET Integrated Body Bias For Bi-Directional Blocking

Contextual Info: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

Contextual Info: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

k351

Abstract: common-drain
Contextual Info: SEMICONDUCTOR K3519PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

K352

Abstract: K3520PQ-XH K3520
Contextual Info: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

Contextual Info: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

Contextual Info: SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

74153

Abstract: si6888
Contextual Info: SPICE Device Model Si6888EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si8900EDB

Contextual Info: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si8904EDB

Contextual Info: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si8902EDB

Contextual Info: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si8902EDB

Contextual Info: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

74152

Abstract: 74152 data sheet 74152 datasheet si6868
Contextual Info: SPICE Device Model Si6868EDQ Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si8904EDB

Contextual Info: SPICE Device Model Si8904EDB Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

thermal analysis on pcb

Abstract: GWS8314 TS8314
Contextual Info: PRELIMINARY DATA SHEET For information only Battery Protection MicroSURF TS8314 – Bi-directional N-Channel 2.5V Specified MicroSURF™ General Description Taiwan Semiconductor’s new low cost, state of the art MicroSURF™ lateral MOSFET process technology in chipscale

LND01K1-G

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Contextual Info: Supertex inc. LND01 Lateral N-Channel Depletion-Mode MOSFET General Description Features ►► Bi-directional ►► Low on-resistance ►► Low input capacitance ►► Fast switching speeds ►► High input impedance and high gain ►► Low power drive requirement

Si6876BEDQ

Contextual Info: Si6876BEDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.026 @ VGS = 10 V 6.0 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.5 APPLICATIONS

Contextual Info: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rS1S2(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS

Si6876BEDQ

Abstract: Si6876EDQ SI6876EDQT1E3
Contextual Info: Specification Comparison Vishay Siliconix Si6876BEDQ vs. Si6876EDQ Description: Bi-Directional N-Channel, 30 V D-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6876BEDQ-T1 Replaces Si6876EDQ-T1 Si6876BEDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6876EDQ-T1-E3 (Lead (Pb)-free version)

DIODE S2

Abstract: 21A 8 BALL IRF6156
Contextual Info: PD - 94592 IRF6156 Ultra Low RSS on per Footprint Area l Low Thermal Resistance l Bi-Directional N-Channel Switch l Super Low Profile (<.8mm) l Available Tested on Tape & Reel l ESD Protection Diode † Description l FlipFET Power MOSFET VSS 20V RSS(on) max

5G2R

Abstract: Si6876EDQ
Contextual Info: Si6876EDQ New Product Vishay Siliconix Bi-Directional N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rSS(on) (Ω) IS1S2 (A) 0.025 @ VGS = 10 V 6.2 D TrenchFETr Power MOSFET D Ultra-Low rSS(on) D 4-kV ESD Protection 0.030 @ VGS = 4.5 V 5.7 APPLICATIONS