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    Vishay Siliconix SI8900EDB-T2-E1

    MOSFET 2N-CH 20V 5.4A 10MFP
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    DigiKey SI8900EDB-T2-E1 Reel
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    Vishay Intertechnologies SI8900EDB-T1

    Transistor MOSFET Array Dual N-Channel 20V 5.4A 10-Pin Micro Foot T/R - Tape and Reel (Alt: SI8900EDB-T1)
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    Avnet Americas SI8900EDB-T1 Reel 3,000
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    Vishay Intertechnologies SI8900EDB-T2-E1

    MOSFETs 20V 7.0A 1.8W Bi-Directional
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    Mouser Electronics SI8900EDB-T2-E1
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    SI8900EDB Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si8900EDB Vishay Intertechnology Bi-Directional N-Channel 20-V (D-S) MOSFET Original PDF
    SI8900EDB Vishay Siliconix MOSFETs Original PDF
    Si8900EDB Vishay Telefunken Bi-directional N-channel 20-v (d-s) Mosfet Original PDF
    SI8900EDB-T2-E1 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 5.4A 10-MFP Original PDF

    SI8900EDB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8900E

    Abstract: J-STD-020A Si8900EDB sn 4060
    Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V


    Original     		PDF Si8900EDB S-21474--Rev. 26-Aug-02 8900E J-STD-020A sn 4060

    10-SPROCKET

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 +0.10 1.50 -0.00 A 2.000.05 B 1.75  0.10 B 5.50  0.05 12.0 +0.30 -0.10 SECTION A-A A SECTION B-B NOTES: 1. 10-sprocket hole pitch cumulative tolerance 0.2.


    Original     		PDF 275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-04476--Rev. 30-Aug-04

    c 5706

    Abstract: AN609 Si8900EDB
    Text: Si8900EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si8900EDB AN609 08-Aug-07 c 5706

    Si8900EDB

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOTr 5x2: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8900EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX AO KO SECTION B-B


    Original     		PDF 275-mm Si8900EDB-T2 10-sprocket 93-5211-x) 92-5210-x) T-02077--Rev. 13-May-02 93-5224-x Si8900EDB

    S1 0780

    Abstract: 10-BUMP 8900E J-STD-020A Si8900EDB
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT


    Original     		PDF Si8900EDB 8900E 08-Apr-05 S1 0780 10-BUMP 8900E J-STD-020A

    8900E

    Abstract: Si8900EDB
    Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8900EDB MICRO FOOTr 2X5: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8900EDB T2 Device on Tape Orientation 8900E xxx 8900E xxx 8900E


    Original     		PDF Si8900EDB 275-mm 8900E Specification--PACK-0023-2 S-50073, 8900E

    Untitled

    Abstract: No abstract text available
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier


    Original     		PDF Si8900EDB 8900E 8900E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Text: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


    Original     		PDF Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB

    Untitled

    Abstract: No abstract text available
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier


    Original     		PDF Si8900EDB 8900E 8900E 11-Mar-11

    S1 0780

    Abstract: 8900E J-STD-020A Si8900EDB
    Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V


    Original     		PDF Si8900EDB S-20802--Rev. 01-Jul-02 S1 0780 8900E J-STD-020A

    10-BUMP

    Abstract: 8900E Si8900EDB ks-110
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) RS1S2(on) (Ω) 20 0.024 at VGS = 4.5 V 7 0.026 at VGS = 3.7 V 6.8 0.034 at VGS = 2.5 V 5.0 0.040 at VGS = 1.8 V 5.5 7 6 COMPLIANT S2 S1 Pin 1 Identifier


    Original     		PDF Si8900EDB 8900E 18-Jul-08 10-BUMP 8900E ks-110

    31916

    Abstract: No abstract text available
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V


    Original     		PDF Si8900EDB 8900E 8900E S-31916--Rev. 15-Sep-03 31916

    0948 B

    Abstract: No abstract text available
    Text: Tape Information Vishay Siliconix MICRO FOOT 5 x 2: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8900EDB-T2 4.000.10 4.000.10 + 0.10 Ø 1.50 - 0.00 A 2.000.05 B B 1.75  0.10 5.50  0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.


    Original     		PDF Si8900EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5224-X 0948 B

    Si8900EDB

    Abstract: A1731
    Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8900EDB S-60073Rev. 23-Jan-06 A1731

    Si8900EDB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8900EDB 18-Jul-08

    10-BUMP

    Abstract: 8900E J-STD-020A Si8900EDB
    Text: Si8900EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 IS1S2 (A) 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.040 @ VGS = 1.8 V 5.5 Bump Side View MICRO FOOT


    Original     		PDF Si8900EDB 8900E S-50066--Rev. 17-Jan-05 10-BUMP 8900E J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) rSS(on) (W) 20 0.024 @ VGS = 4.5 V 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 APPLICATIONS 0.40 @ VGS = 1.8 V 5.5 D Battery Protection Circuit


    Original     		PDF Si8900EDB 8900E 8900E 10BUMP S-20217--Rev.

    Untitled

    Abstract: No abstract text available
    Text: Si8900EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) rS1S2(on) (W) 20 7 0.026 @ VGS = 3.7 V 6.8 0.034 @ VGS = 2.5 V 5.0 0.40 @ VGS = 1.8 V 5.5 Bump Side View S2 7 6 IS1S2 (A) 0.024 @ VGS = 4.5 V


    Original     		PDF Si8900EDB 8900E 8900E S-21338--Rev. 05-Aug-02

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI-8100D

    Abstract: si8100 Si8100DB
    Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8100DB 2002/95/EC Si8100DB-T2trademarks 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 SI-8100D si8100

    Untitled

    Abstract: No abstract text available
    Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8475EDB 2002/95/EC 8475E Si8475EDB-T1-E1 25hay 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 11-Mar-11

    smd marking AAAA

    Abstract: No abstract text available
    Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging


    Original     		PDF Si8402DB Si8402DB-T1-E1 11-Mar-11 smd marking AAAA