BILL54E Search Results

Contextual Info: PRELIMINARY MICRON MT5LC1001 1 MEG X 1 SRAM SlMICCNDUÍTO* IN C I SRAM 1 MEG X 1 SRAM LOW VOLTAGE PIN ASSIGNMENT Top View • AU I / O pins are 5V tolerant • High speed: 1 5 ,1 7 ,2 0 and 25ns • High-perform ance, low-power, CM OS double-metal process

Contextual Info: I 4’ 8M E Gx32 DRAM SIMMs MICRON I TECHNOLOGY, INC. MT8D432 X MT16D832(X) DRAM MODULE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single in-line m emory module (SIMM) • 16MB (4 M eg x 32) and 32M B (8 M eg x 32)

Contextual Info: PRELIMINARY MT5LC1008 128K X 8 SRAM |U|IC=RON 128K x 8 S R A M SRAM LOW VOLTAGE WITH OUTPUT ENABLE • All I/O pins are 5V tolerant • High speed: 15,17,20 and 25ns • High-performance, low-power, CMOS double-metal process _ • Single +3.3V ±0.3V power supply

Contextual Info: PRELIMINARY M IC R O N 1 — - 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM MT41LC256K32D4 SGRAM FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle

Contextual Info: ADVANCE MT58LC64K32/36C5 64K X 32/36 SYNCBURST SRAM MICRON I TECHNOLOGY, INC. 64K x 32/36 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View

MT4LC4M4G6

Contextual Info: PRELIMINARY MT4LC4IW4GS 4 M EG x4 BURSTEDO DRAM 4 MEG x 4 BURST EDO DRAM FEATURES PIN ASSIGNMENT Top View • Burst order, interleave or linear, programmed by executing WCBR cycle after initialization • Single power supply: +3.3V ±5% • All inputs and outputs are LVTTL compatible with 5V