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    Untitled

    Abstract: No abstract text available
    Text: MICRON I 64K TECHNOLOGY, INC. SYNCHRONOUS SRAM +3.3V SUPPLY, PIPELINED, BURST COUNTER AND SINGLE-CYCLE DESELECT PIN ASSIGNMENT Top View • • • • • • • • Fast access times: 4 .5 ,5 ,6 and 7ns Fast OE# access times: 4 .5 ,5 and 6ns Single +3.3V +10% /-5% power supply


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    PDF MT58LC64K16/18D8

    C1994

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N I MT20D840 8 MEG X 40 DRAM MODULE 8 MEG X 40 DRAM DRAM MODULE FAST PAGE MODE FEATURES Industry-standard 72-pin single in-line package High-perform ance CMOS silicon-gate process Single 5V ±10% pow er supply All device pins are TTL-compatible


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    PDF MT20D840 72-pin 030mW 048-cycle 096-cycle DE-16) MT20D840G T20DA40 blll541 C1994

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE 4 MEG X 64 DRAM SODIMM M IC R O N I TF.CHNOLOOY, INC. SMALL-OUTLINE DRAM MODULE MT4LDT464H X S FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-stand ard pinout in a 144-pin, sm all-outline, dual in-line m em ory m odule (DIMM) • 32MB (4 M eg x 64)


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    PDF MT4LDT464H 144-pin, 096-cycle 256ms

    Untitled

    Abstract: No abstract text available
    Text: M I ir S n M MT58LC32K32/36B3 32K X 32/36 SYNCBURST SRAM SYNCHRONOUS SRAM 32K x 32/36 SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 8 .5 ,9 ,1 0 and 11ns


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    PDF MT58LC32K32/36B3 100-PIN MT50LC32K32/36B3

    MT16D832-6/7

    Abstract: No abstract text available
    Text: MICRON MT8D432 X , MT16D832(X) 4 MEG, 8 MEG x 32 DRAM MODULES DRAM MODULE 4 MEG, 8 MEG x32 I TECHNOLOGY, MC. 16, 32 MEGABYTE, 5V, FAST PAGE MODE OR EDO PAGE MODE FEATURES PIN ASSIGNMENT (Front View) • JEDEC- and industry-standard pinout in a 72-pin, single-in-line memory module (SIMM)


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    PDF MT8D432 MT16D832 72-pin, 448mW 048-cycle MT16D832-6/7

    Untitled

    Abstract: No abstract text available
    Text: MICRON I MT4C4M4E9 S 4 MEG X 4 DRAM TECHNOLOGY, MC. DRAM 4 MEG x 4 DRAM 4K REFRESH, 5V, EDO PAGE MODE, OPTIONAL SELF REFRESH FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply


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    PDF 220mW 096-cycle 128ms

    MT4C1670

    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC 5SE T> • falllSHI DD0HS21 SbT ■ URN MT4C1670/1 L 64K X 16 DRAM MICRON rn TECHNOLOGY INC. DRAM 6 4 K x 1 6 DRAM NEW T -w -zb -n STATIC COLUMN MODE, LOW POWER, EXTENDED REFRESH • Industry standard xl6 pinouts, timing, functions and packages


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    PDF DD0HS21 MT4C1670/1 MT4C1670 MT4C1671 225mW----------- DDD4S36

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4LC4M16K2/F5 4 MEG X 16 DRAM |U|ICRON X 16 DRAM 3.3V, FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View • Single +3.3V +0.3V power supply • Industry-standard xl6 pinout, timing, functions and packages • 13 row-addresses, 9 column-addresses (K2) or


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    PDF MT4LC4M16K2/F5 096-cycle 50-Pin Q013411

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 1 — - 256K x 32 SGRAM SYNCHRONOUS GRAPHICS RAM MT41LC256K32D4 SGRAM FEATURES • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle


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    PDF MT41LC256K32D4 024-cycle 100-Pin blll541

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N MT28SF002 256K x 8 FLASH MEMORY I FLASH MEMORY 256K x 8 S m a rtV o lta g e , FEATURES PIN ASSIGNMENT Top View • Five erase blocks: 16KB boot block (protected) Two 8KB parameter blocks Two main memory blocks • Deep Power-Down Mode: 8|iA at 5V Vcc; 2|oA at


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    PDF MT28SF002 100ns 110ns, 150ns 40-Pin

    Untitled

    Abstract: No abstract text available
    Text: MT58LC64K18C4 64K X 18 SYNCBURST SRAM M IC R O N SYNCHRONOUS SRAM 64K x 18 SRAM FEATURES • • • • • • • • • • • • • • • • • PIN ASSIGNMENT (Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE access time: 5 and 6ns


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    PDF MT58LC64K18C4 Hi069 160-PIN

    Untitled

    Abstract: No abstract text available
    Text: MT4C1004J S 4 MEG X 1 DRAM MICRON • SEMCONOUCTOR. INC 4 MEG X 1 DRAM DRAM STANDARD OR SELF REFRESH Zl > FEATURES • 1,024-cycle refresh distributed across 16ms (MT4C1004J) o r 128ms (MT4C1004J S only) • Industry-standard pinout, timing, functions and


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    PDF MT4C1004J 024-cycle MT4C1004J) 128ms 225mW

    Untitled

    Abstract: No abstract text available
    Text: blUSHÌ 0010113 OTñ n RN M IC R O N I MT43C8128A/9A 128K X 8 TRIPLE-PORT DRAM SEViCONDUCtCR ISC. 128K x 8 DRAM WITH DUAL 256 x 8 SAMS TRIPLE-PORT DRAM FEATURES • • • • • • • • • • • • • PIN ASSIGNMENT Top View Three asynchronous, independent, data access ports


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    PDF MT43C8128A/9A 512-cycle

    Untitled

    Abstract: No abstract text available
    Text: 4 MEG 5E MiCONOUCTOR. INC X 8 DRAM MODULE 4 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin single-in-line package • H igh-perform ance CMOS silicon-gate process • Single 5V ±10% pow er supply • All device pins are TTL-compatible


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    PDF 30-pin 800mW 024-cycle MT8D48M-6 MT8D48 A0-A10 D011450

    T9049

    Abstract: A7005 MT9D49M-6
    Text: » M I C-n Rw On Ni I iH M 49 4 MEGX 9 DRAMM OT9D DULE DRAM MODULE 4 MEG X 9 DRAM FAST PAGE MODE FEATURES OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT9D49M-6 PIN ASSIGNMENT Top View


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    PDF 30-pin 025mW 024-cycle MT9D49 A0-A10 T9049 A7005 MT9D49M-6

    Untitled

    Abstract: No abstract text available
    Text: 1 '- MICRON TECHNOLOGY INC 17E D • blllSMT 000177b E ■ ' MICRON ■ MT42C4064 883C TECHMOCOGY INC ■ T - H t- z v n MILITARY VRAM 64K X 4 DRAM with 256 X 4 SAM ! AVAILABLE AS MILITARY SPECIFICATION PIN ASSIGNMENT Top View • SM D 5962-89952 •


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    PDF 000177b MT42C4064 24L/400 VcqC12 MIL-STD-883

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE “ £8M 8P 4/C2 8^ M E G x 8 D R A M MICRON I DRAM 8 MEG x 8 DRAM 3.3V EDO PAGE MODE FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x8 pinout, timing functions and packages • 13 row-addresses, 10 column-addresses P4 or


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    PDF 096-cycle 34-Pin 0G11227

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MICRON 4 MEG x 16 EDO DRAM I MT4LC4M16R6 DRAM FEATURES PIN ASSIGNMENT Top View OPTIONS 50-Pin TSOP (DB-7) Vcc DQ1 DQ2 DQ3 DQ4 Vcc DQ5 DQ6 DQ7 DQ8 NC Vcc WE# RAS# NC NC NC NC A0 A1 A2 A3 A4 A5 Vcc MARKING • Package Plastic TSOP (400 mil) TG


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    PDF MT4LC4M16R6 50-Pin MT4LC4M16R6TG-5 104ns