BIPOLAR POWER TRANSISTOR VCE 600 VOLT Search Results

CM600HG-130H

Abstract: HVIGBT from Mitsubishi electric
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

CM400E4G-130H

Abstract: cm400e2
Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H HIGH POWER SWITCHING USE INSULATED TYPE th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400E2G-130H IC ………………………

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-130H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-130H ● IC . 600 A ● VCES . 6500 V

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………

CM400HG130H

Contextual Info: CONFIDENTIAL Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 MITSUBISHI HVIGBT MODULES CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules COMPANY PROPRIETARY

CM400HG-130H

Abstract: cm400hg-130 CM400HG130H cm400hg
Contextual Info: MITSUBISHI HVIGBT MODULES Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 Revision: A CM400HG-130H rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-130H ●IC ……………………… 400 A

CM600HG

Abstract: CM600HG-90H BIPOLAR TRANSISTOR HVIGBT from Mitsubishi electric CM600HG-90
Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM600HG-90H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM600HG-90H ● IC . 600 A ● VCES . 4500 V

D 400 F 6 F BIPOLAR TRANSISTOR

Contextual Info: MITSUBISHI HVIGBT MODULES Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400HG-130H IC ……………………… 400 A

Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

MITSUBISHI CM400HG-66H

Abstract: D 400 F 6 F BIPOLAR TRANSISTOR HVIGBT 525k CM400HG-66H hvigbt diode 3g124
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM400HG-66H ● IC . 400 A ● VCES . 3300 V

Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V

CM400HG-66H

Abstract: mitsubishi The label version
Contextual Info: MITSUBISHI HVIGBT MODULES CM400HG-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400HG-66H ● IC . 400A ● VCES . 3300V

CM800DZB-34N

Abstract: 1000v bipolar transistor hvigbt diode
Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V

Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZB-34N HIGH POWER SWITCHING USE 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules INSULATED TYPE CM800DZB-34N ● IC . 800A ● VCES . 1700V

BIPOLAR TRANSISTOR

Abstract: bipolar power transistor vce 600 volt ks53 KS534505
Contextual Info: POIiJEREX INC m Tfl n /m 1 E J ? 5 ^ 4 t 5 1 OOOEOEfl _ x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412) 925-7272 t p 3 3-^ D KS534505 S in C flB B ip o ld l" Transistor Module 50 Amperes/600 Volts Description Powerex Single Bipolar Transistor

SWITCHING TRANSISTOR 144

Abstract: CM1800HC-34N igbt transistor
Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34N 4th-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34N ● IC . 1800A ● VCES . 1700V

TRANSISTOR A01

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

CM1800HC-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM1800HC-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1800HC-34H ● IC . 1800A ● VCES . 1700V

mitsubishi CM800DZ-34H

Abstract: CM800DZ-34H mitsubishi inverter air conditioning
Contextual Info: MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H ● IC . 800A ● VCES . 1700V

BUL44D2

Abstract: 100 Amp current 1300 volt diode ballast 300 watt Motorola Bipolar Power Transistor Data MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by BUL44D2/D SEMICONDUCTOR TECHNICAL DATA BUL44D2 Designer's  Data Sheet High Speed, High Gain Bipolar NPN Power Transistor with POWER TRANSISTORS 2 AMPERES 700 VOLTS 50 WATTS Integrated Collector-Emitter Diode and Built-in Efficient

Contextual Info: MITSUBISHI HVIGBT MODULES CM800HC-66H 3rd-Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HC-66H ● IC . 800A ● VCES . 3300V

CM600DY-34H

Contextual Info: MITSUBISHI HVIGBT MODULES CM600DY-34H HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM600DY-34H ● IC . 600A ● VCES . 1700V