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    BIPOLAR TRANSISTOR 1500V Search Results

    BIPOLAR TRANSISTOR 1500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    BIPOLAR TRANSISTOR 1500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HALL EFFECT 21E

    Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr
    Text: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF

    transistor JF

    Abstract: No abstract text available
    Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package


    Original     		PDF ST1000EX21 ST1000EX21 1250g transistor JF

    transistor JF

    Abstract: ST1000EX21
    Text: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package


    Original     		PDF ST1000EX21 transistor JF ST1000EX21

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IC110 IXBF42N300 100ms 42N300

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		PDF IXBF42N300 IC110 IC110 100ms 100ms 42N300

    spice gummel

    Abstract: No abstract text available
    Text: BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V HBM • High fT of 22 GHz


    Original     		PDF BFR460L3 AEC-Q101 spice gummel

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B20N300C IC110 20N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF MMIX1B15N300C IC110 15N300C

    IXBF

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000


    Original     		PDF IXBF42N300 IC110 IC110 100ms 100ms 42N300 IXBF

    mosfet 1500v

    Abstract: BA157 C08DE150HV JESD97 STC08DE150HV mosfet 1500v for smps bipolar transistor 1500v
    Text: STC08DE150HV Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V


    Original     		PDF STC08DE150HV 2002/93/EC O247-4L STC08DE150HV mosfet 1500v BA157 C08DE150HV JESD97 mosfet 1500v for smps bipolar transistor 1500v

    STC08DE150HP

    Abstract: mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps
    Text: STC08DE150HP Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V


    Original     		PDF STC08DE150HP 2002/93/EC O247-4L STC08DE150HP mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF20N360 IC110 20N360 H7-B11)

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF10N300C IC110 10N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBL20N300C IC110 20N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF15N300C IC110 15N300C

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF20N360 IC110 20N360 H7-B11)

    Untitled

    Abstract: No abstract text available
    Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V


    Original     		PDF STC08IE150HV O247-4L STC08IE150HV

    C08IE150HV

    Abstract: JESD97 STC08IE150HV HV cascode smps
    Text: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V


    Original     		PDF STC08IE150HV O247-4L STC08IE150HV C08IE150HV JESD97 HV cascode smps

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF14N300 100ms 14N300

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		PDF IXBF22N300 100ms 22N300 3-10-14-A

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBH14N300HV VCES = 3000V IC110 = 14A VCE sat  2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000


    Original     		PDF IXBA14N300HV IXBH14N300HV IC110 O-263HV 100ms 14N300

    st l6574

    Abstract: ignition IGBTS L6561 AN966 L6574 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		PDF AN993 L6574 L6561 st l6574 ignition IGBTS L6561 AN966 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC

    ELECTRONIC BALLAST transistor DIAGRAM

    Abstract: AN993 L6561 L6574 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP
    Text: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.


    Original     		PDF AN993 L6574 L6561 ELECTRONIC BALLAST transistor DIAGRAM AN993 L6561 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP

    ST1000EX21

    Abstract: transistor JF 1000A diode 5V IGBT 1000A
    Text: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package


    OCR Scan     		PDF ST1000EX21 60MAX. 1250g ST1000EX21 transistor JF 1000A diode 5V IGBT 1000A