BIPOLAR TRANSISTOR 1500V Search Results

HALL EFFECT 21E

Abstract: thyristor aeg aeg thyristor transistor Common Base configuration general electric C22B equivalent transistor bc 172 b aeg 2101 thyristor bipolar power transistor data BC 148 TRANSISTOR sot-23 npn marking code cr
Contextual Info: Bipolar Power Transistor Data Book 1996 Semiconductors TELEFUNKEN Semiconductors Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Selector Guide, Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

transistor JF

Contextual Info: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package

transistor JF

Abstract: ST1000EX21
Contextual Info: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package

Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C

Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C

spice gummel

Contextual Info: BFR460L3 Low Noise Silicon Bipolar RF Transistor • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz • Excellent ESD performance typical value 1500V HBM • High fT of 22 GHz

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C

IXBF

Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000

mosfet 1500v

Abstract: BA157 C08DE150HV JESD97 STC08DE150HV mosfet 1500v for smps bipolar transistor 1500v
Contextual Info: STC08DE150HV Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

STC08DE150HP

Abstract: mosfet 1500v Marking 8A to247 f BA157 C08DE150HP JESD97 mosfet 1500v for smps
Contextual Info: STC08DE150HP Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 W Preliminary Data General features Table 1. General features VCS ON IC RCS(ON) 0.6V 8A 0.075Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

Contextual Info: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBL20N300C VCES = 3000V IC110 = 20A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

C08IE150HV

Abstract: JESD97 STC08IE150HV HV cascode smps
Contextual Info: STC08IE150HV Emitter switched bipolar transistor ESBT 1500V - 8A - 0.08 Ω Features VCS ON IC RCS(ON) 0.65 V 8A 0.08 Ω • High voltage / high current cascode configuration ■ Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Squared RBSOA, up to 1500 V

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

ST1000EX21

Abstract: transistor JF 1000A diode 5V IGBT 1000A
Contextual Info: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package

Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBA14N300HV IXBH14N300HV VCES = 3000V IC110 = 14A VCE sat  2.7V TO-263HV (IXBA) G E Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000

st l6574

Abstract: ignition IGBTS L6561 AN966 L6574 Electronic ballast 58W l6561 in boost Ignition Transformer L6561 AN993 resonant half bridge MOSFET driver IC
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.

ELECTRONIC BALLAST transistor DIAGRAM

Abstract: AN993 L6561 L6574 l6561 in boost Electronic ballast 58W resonant half bridge MOSFET driver IC 220k 400V UV ballast ELECTRONIC BALLAST FLUORESCENT LAMP
Contextual Info: AN993 APPLICATION NOTE ELECTRONIC BALLAST WITH PFC USING L6574 AND L6561 by I. Dal Santo, U. Moriconi The advent of dedicate IC for lamp ballast applications is replacing the old solutions based on bipolar transistor driven by a saturable pulse transformer.