BIPOLAR ZENER Search Results
BIPOLAR ZENER Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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CUZ6V8 |
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Zener Diode, 6.8 V, USC |
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CEZ5V6 |
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Zener Diode, 5.6 V, ESC |
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CUZ6V2 |
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Zener Diode, 6.2 V, USC |
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CUZ30V |
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Zener Diode, 30 V, USC |
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BIPOLAR ZENER Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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GT30F131
Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
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SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 | |
GT30J124
Abstract: smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram
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SCE0004I SC-43) 2SC1815 GT30J124 smd transistor h2a gt45f122 TPCP8R01 GT30F123 2sc1815 smd type smd marking 8L01 h2a smd 2SC5471 2sc5200 amplifiers circuit diagram | |
GT30F124
Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
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2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 | |
microcontroller based inverter
Abstract: microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener
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TB061 RS-232 D-85737 DS91061A-page microcontroller based inverter microchip inverter laser diode samsung microchip inverter application notes DK-2750 TB061 200B 2.5v zener | |
transistor truth table
Abstract: small signal high frequency bipolar transistor IC of XOR GATE mosfet controlled thyristor high power bipolar transistor selection gate voltage control circuit of a power amplifier gate voltage control circuit dc voltage SCR gate Control IC IGBTs Transistors applications of mos controlled thyristor
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BUK856-450IXContextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener |
OCR Scan |
BUK856-450IX T0220AB BUK856-450IX | |
Contextual Info: A1202 and A1203 Continuous-Time Bipolar Switch Family Description Features and Benefits The Allegro A1202 and A1203 Hall-effect bipolar switches are next-generation replacements and extension of the popular Allegro A3133 and A3132 bipolar switch product line. Overall, |
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A1202 A1203 A1203 A3133 A3132 A120x | |
transistor bc 245
Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
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SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 | |
Contextual Info: A1205 Continuous-Time Bipolar Switch Description Features and Benefits The Allegro A1205 Hall-effect bipolar switch is a nextgeneration replacement and extension of the popular Allegro A3134 bipolar switch. The A1205 has identical specifications as the A1201 but is recommended for applications that require |
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A1205 A1205 A3134 A1201 A1204 | |
1N6066AContextual Info: Back to Zener Diodes 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES DO-13 The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients |
OCR Scan |
1N6036A 1N6072A 1N6072A DO-13 1N6066A | |
5N602Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power |
OCR Scan |
BUK856-400IZ T0220AB BUK856-400IZ 5N602 | |
Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power |
OCR Scan |
BUK856-400IZ T0220AB BUK856-400 Tp125 | |
BUK856-4001ZContextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power |
OCR Scan |
BUK856-4001Z T022QAB BUK856-400 | |
MGP2N60DContextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching |
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MGP2N60D/D MGP2N60D 220AB MGP2N60D | |
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Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level Insulated gate bipolar power |
OCR Scan |
BUK856-400 | |
D 400 F 6 F BIPOLAR TRANSISTORContextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope |
OCR Scan |
BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR | |
Contextual Info: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar |
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A3230 A3230 A3230-DS | |
Contextual Info: A3230 Chopper-Stabilized Hall-Effect Bipolar Switch GND Package LH, 3-pin Surface Mount 3 1 3 2 VCC VOUT 2 1 Package UA, 3-pin SIP The A3230 Hall-effect sensor is a temperature stable, stress-resistant bipolar switch. This sensor is the most sensitive Hall-effect device in the Allegro bipolar |
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A3230 A3230 A3230-DS | |
A3230LUA-T
Abstract: A3230-DS allegro 3 PIN hall effect sensor Understanding Bipolar Hall-Effect Sensors Allegro Hall-Effect ICs A3230 A3230ELHLT A3230ELHLT-T A3230EUA A3230EUA-T
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A3230 A3230 A3230-DS A3230LUA-T A3230-DS allegro 3 PIN hall effect sensor Understanding Bipolar Hall-Effect Sensors Allegro Hall-Effect ICs A3230ELHLT A3230ELHLT-T A3230EUA A3230EUA-T | |
Contextual Info: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope |
OCR Scan |
BUK866-400 | |
kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
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OCR Scan |
BUK866-400 kd smd transistor smd transistor wc LG Philips LM 300 W 01 | |
Contextual Info: MOTOROLA Order this document by MGP2N60D/D SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet MGP2N60D In su late d G ate Bipolar T ransistor N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT contains a built-in free wheeling diode and a gate protection zener. Fast switching |
OCR Scan |
MGP2N60D/D MGP2N60D 21A-09 O-220AB | |
ZTX653 equivalent
Abstract: ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A
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2002/95/EC) ZTX653 equivalent ZTX753 equivalent fzt651 ZDT1049 ztx1056A ztx651 equivalent equivalent FZT651 zldo 17 50 1N4148 SOD323 DIODE S4 58A | |
pc574
Abstract: uPC574 574J C10535E PC574J nec k 1006 IC1006 uPC574C upc574 nec
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PC574 PC574 PC574J: PC574J S13200EJ4V0DS00s uPC574 574J C10535E PC574J nec k 1006 IC1006 uPC574C upc574 nec |