T022QAB Search Results

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

IRF3205

Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
Contextual Info: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

10150 CT

Abstract: schottky mbr MJFR MBR1015OCT MBR10200CT MBR1035CT Scans-008335
Contextual Info: E MBR1035CT - MBR10200CT TAIWAN SEMICONDUCTOR 10.0 AM PS . Schottky Barrier Rectifiers RoHS T0-22QAB CO M PLIANCE - . . 1 Features <• P la s tic m £ te ria l used c s rrie a U n d e rw rite rs Lab o ra to ry C la s s ific a tio n s 9 4 V -0 M alar s ilico n ju n c tio n , m ajority c a rrie r cond u c tio n

ta7317

Abstract: TA7311
Contextual Info: I Power Transistore 2N5490-2N5497 353 7 HHAS File N um ber HARRIS SEMICOND SECTOR 27E I> M302271 G 0 n ò 7 M TERMINAL DESIGNATIONS Silicon N-P-N VERSAWATT Transistors G e n e r a l-P u rp o s e T y p e s fo r M e d iu m -P o w e r S w itc h in g an d A m p lifie r A p p lic a tio n s

T0220 PACKAGE buk553

Abstract: BUK553-50A BUK553-50B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bbSBTBl OaSObaO =1 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

IRF744

Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Contextual Info: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

T1P132

Abstract: TIP135 texas tip 132 *P131 opto
Contextual Info: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b *=]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137

1RF630

Abstract: irf810 1RF540 1RF530 1RF620 1rf740 ferranti 1RF634 RF543 IRF9613
Contextual Info: - 244 - ä! € tt f # t Vd s or € * $ fg Ta=25‘ C Vg s • f Vd g )V (V) (V) ie. IGSS Pd Id * /CH * /CH (A) m Vg s th) ID S S max (nA) Vg s (V) (MA) Vd s (V) 14 Coss Crss 5* m. ffi % V g s =0 *typ (A) Id (A) Vg s (V) *typ (S) (*typ) (max) (pF) Id (A)

1rf730

Abstract: IRF9513 IRF9521 irfbf30 IRFBG30 THOMSON DISTRIBUTOR 58e d IRF9511 IRF9523 IRFBC30 IRFBE32
Contextual Info: THO d SO N/ D I S T R I B U T O R SflE D • T02t.ñ73 0 D D S Ô D 2 52S ■ International Rectifier TCSK HEXFET Power MOSFETs Plastic Insertable Package TO-220 N-Channel >DM Pu'*« Drain Current Amps Pp Max Power Dissipation (Watts) 1.7 2.0 2.8 3.3 4.5

BDX43C

Contextual Info: BDX34, BDX34A, BDX34B, BDX34C, BDX34D HARRIS SEMICOND SECTOR SbE P • File Number 694 4302271 0 0 4 0 ^ 7 T52 « H A S 10-Ampere P-N-P Darlington Power Transistors T -3 3 -3 1 TERMINAL DESIGNATIONS 45-60-80-100-120 Volts, 70 Watts Gain of 750 at 4 A BDX34, BDX34A

Contextual Info: Data Sheet 20 Amp SCHOTTKY BARRIER RECTIFIERS 'emiconductor Mechanical Dimensions Description JEDEC T0-22QAB -fr— .too L- m . 1 4 0 v 4- ► .10 V =1 T~ + .39 .42 A-* .50 -»| m o + k- .225 K -*| Features • H IG H C U R R E N T C A P A B IL IT Y W IT H L O W V r

Contextual Info: Data Sheet 16 Amp PLASTIC SILICON RECTIFIERS FR1601. . . 1606 Series Semiconductor Description Mechanical Dimensions JEDEC T0-22QAB .14,0 .10 \ .39 .42 .too k - so - h +_ U- .225 Min .620 h 1— .25 T1 — *\ F e a tu re s • LO W C O ST ■ D IF F U S E D J U N C T IO N

Contextual Info: BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES = 16 A • LOGIC LEVEL TRIGGERING: ■ HIGH SURGE CAPABILITY ■ It rm s Ig t< 10mA DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance glass passivated technology. These

wn 537 a fet

Contextual Info: • ô c !3 s b 0 s m a ■ PRÜFET BTS410F2 SIEMENS Smart Highside Power Switch Features • • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump

irf9630

Abstract: T0-22Q IRF9Z34 IRF9Z14
Contextual Info: International HEXFET Power MOSFETs T0-22QAB liQ R R ectifier Logic-level H E X F E T s are fully-enhanced with 4 or 5V applied to the gate. T0-220AB Logic Level N-Channel Part Number V BR DSS Drain-to-Source Boston) Iq Continuous Breakdown On-State Drain Current

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BT808

Abstract: Q2006L5 Triac SC141D TFK 609 TO810MH triac tic236m Q2006R5 Q4025V5 Q6040 T0505NH
Contextual Info: LORAS INDUSTRIES INC 42E D 5500440 DOOOODt. T IL O R A “T - 2 5 ' O Î TRIAC ITrms PART No. VDRM Volts PACKAGE Amps IDRM mAmps IGT Q2 Q3 mAmps Q1 VGT Volts Q4 Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms T O -92 Package MAC974 0.6 0.6 MAC976 MACÔ7& 0.6: MAC97A3 "•

TIP74C

Abstract: transistor DA 2688 TIP73 TIP73C TIP73A
Contextual Info: bi T E X A S I N S T R -COPTO} » Ì ] f l tìbl7 Sb 0 D 3 hfl52 Ö3 6 1 7 2 6 TEXAS INSTR COPTO 62C 3Ó852 TIP74, TIP74A, TIP74B, TIP74C P-N-P SILICON POWER TRANSISTORS FEBRUARY 1977 - REVISED OCTOBER 1984 Designed for Complementary Use with TIP73, TIP73A, TIP73B,

2A20

Contextual Info: TEXAS INSTR -COPTO} " DE I f i ^ b l T E b S 9 6 1 7 2 6 TEXAS INSTR COPTO 62C 003t,fi54 3 36824 TIP47, TIP48, TIP49, TIP50 N-P-N SILICON POWER TRANSISTORS R E V IS E D O C T O B E R 1 9 8 4 4 0 W at 2 5 ° C Case Temperature 1 A Continuous Collector Current

TIC2360

Abstract: 8ta12 SC160D TLC226B TO505mh Q2006L5 SC160M 04004f41 C245B Q6040
Contextual Info: LO R A S I N D U S T R I E S INC M2E D • 5SflQ44ö G D G G O D b T ■ LORA “T -2 5 'O Í TRIAC o Q1 Ol VDRM IDRM Volts mAmps col PACKAGE OJ O ITrms Amps PART No. mAmps VGT Volts Ih mAmps VTM Volts ITM Amps 0.6 Amps ITrms TO—92 Package MAC974 MAC976

Contextual Info: PD - 9.689A bitemational S«§Rectifier IRGBC30F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve