BJT 137 Search Results

2N3904

Abstract: LM96163 LM96163C LM96163CISD LM96163CISDX QFN10 RLs6
Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

RTU620

Contextual Info: LM96163 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Literature Number: SNAS433C LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm® BJT Transistor Beta

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

Contextual Info: LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology General Description The LM96163 has remote and local temperature sensors with integrated fan control that includes TruTherm BJT transistor

2SA1759

Abstract: 49411 747 datasheet 7719
Contextual Info: SPICE PARAMETER 2SA1759 by ROHM TR Div. * Q2SA1759 PNP BJT model * Date: 2006/12/18 .MODEL Q2SA1759 PNP + IS=250.00E-15 + BF=156.23 + VAF=100 + IKF=.27401 + ISE=250.00E-15 + NE=1.3315 + BR=4.2710 + VAR=100 + IKR=.13737 + ISC=592.05E-15 + NC=3.0320 + NK=.96812

5E12

Contextual Info: NONLINEAR MODEL SCHEMATIC NE894M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.3 nH LCPKG 0.05 nH Collector Base CCE Q1 0.4 pF LE 0.42 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC 0.24

BF166

Abstract: rbm 1 NE851M13 PARAMETERS
Contextual Info: NONLINEAR MODEL SCHEMATIC NE851M13 CCBPKG 0.05 pF CCB 0.01 pF LBPKG LB 0.05 nH 0.25 nH LCPKG 0.05 nH Collector Base CCE Q1 0.25 pF LE 0.45 nH CCEPKG 0.05 pF LEPKG 0.05 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 137e-18 MJC

Contextual Info: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •

45HEX

Contextual Info: LM96163 www.ti.com SNAS433C – JUNE 2008 – REVISED OCTOBER 2011 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES 1 • 2 • • •

NE685

Contextual Info: NONLINEAR MODEL UPA862TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 NE685 Q2 NE851 Parameters Q1 NE685 Q2 NE851 IS 7.0e-16 137e-18 MJC 0.34 0.14 BF 109 166 XCJC 0.5 0.5 NF 1 0.9871 CJS VAF 15 20.4 VJS 0.75 0.75 IKF 0.19 50 MJS ISE 7.90e-13 80.4e-15 FC

003PF

Abstract: 855E 173E-9
Contextual Info: NONLINEAR MODEL UPA895TD BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Q2 Parameters Q1 Q2 IS 137e-18 137e-18 MJC 0.14 0.14 BF 166 166 XCJC 0.5 0.5 NF 0.9871 0.9871 CJS VAF 20.4 20.4 VJS 0.75 0.75 IKF 50 50 MJS ISE 80.4e-15 80.4e-15 FC 0.55 0.55 NE 2.4 2.4

power BJT

Abstract: HP8971C MMIC s-band monolithic amplifier MAR MONOLITHIC AMPLIFIERS GST-2 silicon bipolar transistor low noise amplifier amplifier lna low noise amplifier s-band TRANSISTOR noise figure measurements HP8970B
Contextual Info: ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol. 3, No. 3, pp. 136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier LNA with a measured noise figure of

intel processor transistor count through 2013

Contextual Info: LM96163 www.ti.com SNAS433D – JUNE 2008 – REVISED MAY 2013 LM96163 Remote Diode Digital Temperature Sensor with Integrated Fan Control and TruTherm BJT Transistor Beta Compensation Technology Check for Samples: LM96163 FEATURES DESCRIPTION • The LM96163 has remote and local temperature

2N3568

Contextual Info: 2N3568 Si NPN Lo-Pwr BJT 1.65 Transistors Bipolar Silicon NPN Low. 1 of 2 Home Part Number: 2N3568 Online Store 2N3568 Diodes Si NPN Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

transistor bf 194

Abstract: BF 235 BF 194 transistor BF 194 TRANSISTORS bf 194 BF 811 2SD1834 TR1935 2987 433E
Contextual Info: SPICE PARAMETER 2SD1834 * 2SD1834 DARLINGTON NPN BJT model * Date: 2006/12/05 *C B E .SUBCKT 2SD1834 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model .MODEL Q1model NPN + IS=95.000E-15 + BF=194.11 + VAF=15 + IKF=1.0843 + ISE=95.000E-15 + NE=1.5307 + BR=44.010

rt8110

Abstract: DS8110-00 BJT 2n3904 2N3904 Drive Base BJT 2N3904 hfe
Contextual Info: RT8110 Compact Synchronous Buck DC/DC PWM Controller General Description Features The RT8110 is a compact fixed-frequency PWM controller with integrated MOSFET drivers for single-phase synchronous buck converter. This part features wide input voltage range operation and tiny package. An internal preregulator drives an external BJT to provide regulated output

UTC TDA2822

Abstract: BJT8050 TDA2822 s GF06 TDA28 JP13 JP16 PA15 0.1uf 0603 vr-10k
Contextual Info: eSLZ000 EMFeSL XC Board for eSL Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.1 ELAN MICROELECTRONICS CORP. April 2008 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

rca 17520

Abstract: TRANSISTOR SMD nc46 8050 smd 3 pin transistor ice 0565 SMD TRANSISTOR ss 8050 transistor 8050 smd smd 8050 transistor 8050 smd transistor smd transistor 8050 pa15 transistor
Contextual Info: ICEeSL-U XA In-Circuit Emulation Board for eSL/eAM Series 16-Bit DSP Sound Processor USER’S HANDBOOK Doc. Version V0.2 ELAN MICROELECTRONICS CORP. August 2006 Trademark Acknowledgments: IBM is a registered trademark and PS/2 is a trademark of IBM. Windows is a trademark of Microsoft Corporation.

POWER MOSFET CIRCUIT

Abstract: fuel injector mosfet automotive injector fuel injector test fuel injector driver FET injector MOSFET driver irfp*32n50k FET IRFP450 AN-1005 IRF7484
Contextual Info: Application Note AN-1005 Power MOSFET Avalanche Design Guidelines By Tim McDonald, Marco Soldano, Anthony Murray, Teodor Avram Table of Contents Page Table of Figures .3 Introduction .4

fuel injector mosfet

Abstract: automotive injector fuel injector driver FET switching with IRFP450 schematic injector MOSFET driver INJECTOR POWER MOSFET CIRCUIT AN-1005 fuel injector test solenoid injector
Contextual Info: AN-1005 Rev. 1.0 POWER MOSFET AVALANCHE DESIGN GUIDELINES Application Note Tim McDonald Marco Soldano Anthony Murray Teodor Avram Page 1 of 17 TABLE OF CONTENTS Table of Figures Introduction Overview Avalanche Mode Defined Avalanche Occurrences In Industry Applications

power switching with IRFP450 schematic

Abstract: POWER MOSFET CIRCUIT BJT, General electric Linear Application Note FET IRFP450 Avalanche
Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN-1005 Power MOSFET Avalanche Design Guidelines TABLE OF CONTENTS Page Table of Figures. 2

ECG transistor replacement guide book free

Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
Contextual Info: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a

QSC60xx

Abstract: QUALCOMM QFN QFN22 NUS6189MNTWG qsc60 QUALCOMM Reference design Drive Base BJT QFN-22
Contextual Info: NUS6189MN Low Profile Overvoltage Protection IC with Integrated MOSFET This device represents a new level of safety and integration by combining an overvoltage protection circuit OVP with a 30 V P−channel power MOSFET, a low VCE(SAT) transistor, and low

RF2316

Abstract: DIN4500B TA0015 HBT transistor s parameters measures
Contextual Info: TA0015
 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems       Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic