BUV83
Abstract: BUV82 T-33-73
Contextual Info: N AMER P H I L I P S / D I S C R E T E SSE D y\nS3' 31 QDlfl^n 4 BUV82 BUV83 r - 3 3 - 13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.
|
OCR Scan
|
BUV82
BUV83
r-33-13
BUV82
T-33-13
7Z92935
EiTj-100
BUV83
T-33-73
|
PDF
|
bfa53
Abstract: RZ2833B30W
Contextual Info: -_ -»-• N AMER PHILIPS/DISCRETE OLE D ■ —. 1^53^31 X 0015247 T ■ RZ2833B30V\T^ 13 M ICROW AVE POW ER T R A N SISTO R NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
|
OCR Scan
|
RZ2833B30W
01SE4T
T-33-13
100/js;
bfa53
RZ2833B30W
|
PDF
|