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    American Bright Optoelectronics BF-A536RD

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    BFA53 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BRIGHT LED ELECTRONICS CORP. BF-A53BJRD SINCE 1981 2. Continuous uniform segments. 3. Low power requirement. 4. Excellent characters appearance. 5. Solid state reliability. 6. Categorized for luminous intensity. 7. Direct drive common anode. 12.50 .492 8


    Original     		PDF BF-A53BJRD BF-A53BJRD

    RELE 12V

    Abstract: HOLT INC ECG805 ECG806
    Text: PHILIPS 17E E C G INC D bfa531Hfl 0QD3S4Û ECG805 H E T Y P E E C G 8 0 5 provides th e fun ctio n o f a n i-f gain block and is designed fo r use in c o m ­ m u n ications a n d f-m receivers. T T h e device consists o f a three-stage lim itin g am p li­


    OCR Scan     		PDF ECG805 T-77-05-07 ECG805 ECG806 0V-20V 250mVrms, RELE 12V HOLT INC

    BUP22C

    Abstract: BUP22 BUP22B
    Text: 11 N AMER PHILIPS/DISCR ETE 2SE D • bfa53*ï31 OOlflb? b ■ BUP22 SERIES „ T~ - g g - /3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.


    OCR Scan     		PDF bb53T31 BUP22 BUP22B BUP22C 7Z92B9U3 7Z92S92 BUP22B; BUP22C. BUP22C BUP22B

    RZB12100Y

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D • bfa53*i31 00152fl3 3 H ~ “ Y PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.


    OCR Scan     		PDF FO-57C) RZB12100Y bk53131 001550b RZB12100Y

    JY marking transistor

    Abstract: Transistor 5331 MRB11080Y
    Text: N AMER P H I L I P S / D I S CR ET E ObE D • bfa53T31 0Ü1SD47 DEVELOPMENT DATA 2 m MRB11080Y T his data sheet contains advance information and specifications are subject to change w ithout notice. T -33-iiT PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor intended for use in military and professional applications. It operates


    OCR Scan     		PDF fafa53T31 1SD47 MRB11080Y FO-67 JY marking transistor Transistor 5331 MRB11080Y

    Untitled

    Abstract: No abstract text available
    Text: bfa5312fl QDG354fl 3 17E D PHILIPS E C G INC ECG805 T-77-05-07 l-F GAIN BLOCK WITH VOLTAGE REGULATOR semiconductors n p H E T Y P E E C G 8 0 5 provides the function of an i*f gain block and is designed for use in com* munications and f-m receivers. LOW l-F


    OCR Scan     		PDF bfa5312fl QDG354fl T-77-05-07 ECG805 250mVrms.

    BDT29

    Abstract: BDT29B BDT30 TIP29 c4060
    Text: 11 N AMER PHILIPS/DISCRETE 25E D • bfa53131 GQlTbSB Ô ■ BDT29; 29A BDT29B; 29C T - 3 3 - 0 7 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N silicon transistors in a plastic envelope intended for use in output stages o f audio and television am plifier circuits where high peak powers can occur. P-N-P complements are B D T 3 0 series.


    OCR Scan     		PDF bfa53131 BDT29; BDT29B; r-33-( BDT30 TIP29 BDT29 bS3131 00nbS7 BDT29B c4060

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^53=131 O D l M i n b OhE D l LB E /LC E 2003S LB E /LC E 2009S T - 3 3 -O S ' MICROWAVE LINEAR POWER TRANSISTORS N-P-N transistors for use in a common-emitter class-A linear power amplifier up to 4 GHz. Diffused emitter ballasting resistors, self-aligned process entirely ion implanted and gold metallization


    OCR Scan     		PDF 2003S 2009S LBE2003S LBE2009S LCE2003S LCE2009S

    Untitled

    Abstract: No abstract text available
    Text: '- N AMER PHILIPS/DISCRETE 5SE D • 11 bb53=131 003271=] 5 ■ BYV143 SERIES ,[ 7 ? 0 3 -f t SCHOTTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum-barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and


    OCR Scan     		PDF BYV143 T03-79 T-03-19

    T-33-73

    Abstract: BUT21C BUT21B IEC134 BUT21
    Text: ESE D N AMER PHILIPS/DI SCRETE • II titiS3T31 0010035 T '' BUT21B BUT21C T - S 3 - I 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a T0-220 envelope with electrically isolated seating plane. Intended for use in converters, inverters, switching regulators, motor control


    OCR Scan     		PDF titiS3T31 BUT21B BUT21C T0-220 O-220AB. BUT211B T-33-13 7Z94B37 T-33-73 BUT21C IEC134 BUT21

    BUZ84

    Abstract: t03 package transistor pin dimensions BU184 TRANSISTOR 13-h
    Text: N AMER PHILIPS/DISCRETE ObE D • ^53=131 QDlMblt 1 ■ BUZ 84 ^ - 5 ^ 1 3 PowerMOS transistor July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ84 Q0147QE T-39-13 BIXZ84 BUZ84 t03 package transistor pin dimensions BU184 TRANSISTOR 13-h

    ECG1373

    Abstract: No abstract text available
    Text: PHILIPS E C G INC 17E bhS3Tafl 0005201 T Features • Incorporating pro tectio n circuits surge, th e rm a l p ro tectio n, etc. • A u to m a tic operating point stabilizer circuit -07Q"r ( 1*8 ) • Low d istortion, lo w l / f noise • Low shock noise fro m p o w e r O N , OFF


    OCR Scan     		PDF ECG1373 bfa5312fl T-74-05-0Ã ECG1373 T-74-05-01

    ECG740A

    Abstract: ECG740
    Text: PHILIPS E C G 17E D INC ECG740A Audio Power Amplifier Sem iconductors A U D I O PO W ER A M P L IF IE R JL n A n } r *> INDEX PIN M O.D3 _1 _L FEATURES! • Low Distortion • Low Q uie sce n t Current • 34dB Internally Fixed G a in • H igh Input Impedance


    OCR Scan     		PDF bb53ci2Ã 0DQ3374 ECG740A T-74-05-01 ECG740A ECG740

    pcf8582a

    Abstract: PCF8582D 24 SIGNETICS PCF8572 PCA8582B PCF8570 PCF8571 PCF8581 PCF8582E PCF8598
    Text: NAPC/ SIGNETICS bbS3ci54 00bS23? 45E D Slgnetics l2C Peripherals for Microcontrollers 1 «SIC3 Preliminary specincallon 1024 x 8-bit static C M O S EEPRO M w ith l2C -b us interface P C F8598 T -Y 6 -/3 -2 1 FEAT U RES GENERAL DESCRIPTION • Low Power CMOS


    OCR Scan     		PDF bbS3ci54 00bS23? PCF8598 M8A700 pcf8582a PCF8582D 24 SIGNETICS PCF8572 PCA8582B PCF8570 PCF8571 PCF8581 PCF8582E PCF8598

    bfa53

    Abstract: Philips ECG 978 ECG978
    Text: PHILIPS E C G INC 17E D • bbSBTSÖ G00447S ’ ECG Semiconductors ECG978 DUAL TIMING CIRCUIT 14 13 12 I I FEATURES: • • 10 9 8 f .280" 7.ll TIMING FROM MICROSECONDS THROUGH HOURS OPERATES IN BOTH ASTABLE AND M ONO­ STABLE MOOES • ADJUSTABLE DUTY CYCLE


    OCR Scan     		PDF 00447S 200inA ECG978 22-SECOND bfa53 Philips ECG 978 ECG978

    Untitled

    Abstract: No abstract text available
    Text: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,


    OCR Scan     		PDF PMBF107 VCB711 003b2G5 BF107

    Untitled

    Abstract: No abstract text available
    Text: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast


    OCR Scan     		PDF BUS131 BUS131H BUS131 bb53131 T-33-13

    0q011

    Abstract: DAD02 74LS364 wf034 SCN2672 sc82673 SCN2672TC5A44 scb2673 keyboard controller 8048 signetics 2673
    Text: NAPC/ SI6NETICS Signetics sìe ì> • basais1* oossaia i SCN2672T Programmable Video Timing Controller PVTC Product Specification Microprocessor Products DESCRIPTION The Signetics SCN2672T Programmable Video Timing Controller (PVTC) is a programmable device designed for use


    OCR Scan     		PDF SCN2672T SCN2672T 0q011 DAD02 74LS364 wf034 SCN2672 sc82673 SCN2672TC5A44 scb2673 keyboard controller 8048 signetics 2673

    SCC2691AC1N24

    Abstract: diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312
    Text: S'îE D NAPC/ SIGNETICS Signetics bbS3T24 GDSSIST 1 .7=7Sr-37-ar SCC2691 Universal Asynchronous Receiver/Transmitter UART Product Specification Communications and Industrial Products Group c PIN CONFIGURATIONS DESCRIPTION FEATURES The Signetics SCC2691 Universal Asyn­


    OCR Scan     		PDF SCC2691 7sr-37-aT SCC2691 24-pin SCC2691AC1N24 diagram remote control receiver and transmitter SCC2691AC1A28 T-75-37-05 SCC2691AA1D24 SCC2691AA1N24 SCC2691AC1D24 bts312 bbS312

    RZ3135B15W

    Abstract: RZ3135B30W
    Text: -L_L N AMER ObE PHILIPS/DISCRETE D bbS3T31 DDlS5ti3 a RZ3135B15W RZ3135B30W PULSED POWER TRANSISTORS FOR S-BAND RADAR N-P-N transistors fo r use in common-base pulsed power amplifiers fo r S-band radar 3,1 to 3,5 G H z . Diffused em itter ballasting resistors, interdigitated structure, multicell geometry and gold sandwich


    OCR Scan     		PDF RZ3135B15W RZ3135B30W RZ3135B30W 7Z88S11 RZ3135B15W

    DIODE m1

    Abstract: m3062 BYQ27
    Text: N AMER P H I L I P S / D I S C R E T E 5SE D • b b S B T B l 'oQSeaflS H M I - BYQ27 SERIES JL 7 T Q 3 -/7 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward


    OCR Scan     		PDF BYQ27 T-03-17 M1720 bbS3131 M3053 DIODE m1 m3062

    BUZ356

    Abstract: T0218AA BUZ-356
    Text: N AMER PH IL IP S/D ISCRETE ObE D PowerMOS transistor • =.1353^31 DQ14SH2 S BUZ356 * r= -5 l-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ356 T0218AA; BUZ356 T-39-13 T0218AA BUZ-356

    BZY91-C75R

    Abstract: BZY91 BZY91-C75 BZY91-C7V5 BZY91-C7V5R C51 diode
    Text: N AMER PHILIPS/DISCRETE 2SE » MAINTENANCE T Y P t n lli :«, ^ 53^31 0022077 1 B b ^ Y y i SfcKltfS A REGULATOR DIODES Also available to B S 9305-F052 A range o f diffused silicon diodes in DO-5 metal envelopes, intended fo r use as voltage regulator and


    OCR Scan     		PDF bs3131 BS9305-F052 BZY91-C7V5 BZY91-C75. BZY91-C7V5R BZY91-C75R. bb53131 00S2B02 BZY91 BZY91-C75R BZY91-C75 C51 diode

    BDX62

    Abstract: transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63B BDX63C fxs 100 10
    Text: N AMER PHILIPS/DISCRETE I I b b S B ' m 5SE D o o n i N ? 3 • BDX62; 62A BDX62B; 62 3 T - 33- 3 Í SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching applications: TO-3 envelope, N-P-N complements are BDX63, BDX63A,


    OCR Scan     		PDF bbS3131 D01TIN7 BDX62; BDX62B; BDX63, BDX63A, BDX63B BDX63C. BDX62 transistor BDX62 BDX63A bdx62a BDX62C BDX62B BDX63 BDX63C fxs 100 10