BL 369 Search Results

514400

Contextual Info: O K I Semiconductor MSM514400 B/BL 1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynamic RAM organized as 1,048,576-w ord x 4-bit. The technology used to fabricate the M SM 514400B/BL is OKI's CMOS silicon gate process technology.

LA 369

Abstract: SLC-325 LD003 SML-010
Contextual Info: Index Index LA-101 AK series 212 LA-101 DN series 214 LA-121 AK series 216 LA-131 AK series 218 LA-301 BL series 220 LA-401 DN series 222 LA-421 AK series 224 LA-501 DN series 226 LA-6000 series 232 LA-601 BL series 228 LA-621 AK series 230 LB-202 BL series 238

20-PIN

Abstract: 26-PIN ZIP20-P-400
Contextual Info: O K I Semiconductor M SM 514400B/BL 1 ,0 4 8 , 576-Word x 4 - B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 514400B/BL is a new generation dynam ic RAM organized as 1,048,576-word x 4-bit. The technology u sed to fabricate the M SM 514400B/BL is O K I's C M O S silicon gate process technology.

UI22

Abstract: GM71 LTAEZ
Contextual Info: @ LG Semicon. Co., LTD. Features Description The GM71V S 17403B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)17403B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The

K100-ISO-50

Abstract: a772 A771 Jianghai B772 P 38 B641 A642 b772 p A362 A511
Contextual Info: CD 139 BL Series 9 000h at 105°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP CD 138 PC highest voltage CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +105 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)

V750C

Abstract: ATF750B 5962-0720102MLA ATMEL Packaging information plcc ATmel ATF750c ATV750B V750CPPK ATF750C-10JU ATF750CL V750CLCC
Contextual Info: Migrating from ATV750B/BL PLD to ATF750C/CL 1. Introduction The ATF750C/CL is a PLD from Atmel in a 24- or 28-pin package with 24D or T-type flip-flops, and it is an enhanced version of the well-known ATF750B/BL PLD. The ATF750C/CL is reprogrammable using Atmel’s proven EEPROM-based technology

GH17L

Abstract: cx171 GM71C17403B gm71c18163b 8011S GM71C17403 7011s gm71c18163
Contextual Info: GM7lCl6403B/BL LG Semicon Co.,Ltd. 4,194,304 WORDS x 4 BIT CbIOS DYNAMIC RAM Features Description The GM71 C 16403BIBL is the new generation d y n a m i c R A M organized 4,194,304 words x 4 b i t . GM71 C 16403B/BL h a s realized h i g h e r density, higher performance and various functions

Contextual Info: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BL-C38H/I-41A-DP-6F-160-TBS22A ● Features: ● Package dimensions 1. Chip material: GaAsP/GaP 3.1 .122 2. Emitted color : Hi-Eff Red 3. Lens Appearance : Red Diffused 5.3(.209) *9.36 0.5 (.369 .02) 4. Designed for ease in circuit board assembly.

RCA8350B

Abstract: RCA8350 30957 2N6053 2N612B 2N6054 RCA8350A TIP600 TIP601 TIP602
Contextual Info: INSTR -COPTÔ} 8961726 b2 TEXAS INSTR Ï Ë J a^bl?2h 0031^52 OPTO 62C 36952 D TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 T T—33 —31 Designed For Complementary Use With TIP600, TIP601, TIP602 10 A Rated Collector Current

RCA8350B

Contextual Info: TEXAS I N S T R { OPT O> 8961726 ^2 TEXAS INSTR D eT | a T b l ? 2 b OPTO 6 2C D 0 BL TS 5 36952 TIP605, TIP606, TIP6Ô7 P-N-P DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 • Designed For Complementary Use With TIP600, TIP601, TIP602

LF-PB24P34F

Contextual Info: -fr JH Jlfc f r # BL & g] Ariose Electronics C o . , Ltd. 033 ^Sm^ai!S943#l#165S No.16,Alley, La ne 943,Chung Shan Rd .,Taoyua n,Taiwa n .(post code:330.) Phone:+886-3-379-5651 Fax:+886-3-369-9893 e-mail:ario@msl0.hinet.net web:http://www.ario.com.tw Part no. LF-PB24P34F (Pin Type!

Contextual Info: BRIGHT LED ELECTRONICS CORP. BL-C38H/G-41A-LG-DP-6F-AA-160-TBS22A SINCE 1981 ● Features: ●Package dimensions: 1. Chip material: GaP/GaP 2. Emitted color : Green 3.1 .122 3. Lens Appearance : Light Green Diffused 4. Designed for ease in circuit board assembly.

I-7400

Abstract: tds 8920 c
Contextual Info: @ LG Semicon. Co. LTD. Features Description The GM71 V S 17400B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. G M 71V (S)17400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS

b774 transistor

Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
Contextual Info: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)

A771

Abstract: b774 equivalent A361 A362 A511 A641 A642 A643 B641 D551
Contextual Info: CD 135 BP Series 4 000h at 85°C longer life CD 136 PK • Standard at 85°C · High Ripple Current · Power Supplies & Inverters CD 139 BL 105°C 105°C longer life CD 135 BP CD 138 PC highest voltage Item CD 137 PX Characteristics Operating Temperature Range °C

A771

Abstract: A772 b774 transistor A361 A362 A511 A641 A642 A643 B641
Contextual Info: CD 136 PK Series 4 000h at 105°C longer life CD 136 PK • Standard at 105°C · Professional Power Supplies & Inverters CD 139 BL 105°C longer life CD 135 BP CD 138 PC highest voltage Item CD 137 PX Characteristics -40 ~ +105 Voltage Range V 25 ~ 100 -25 ~ +105

Contextual Info: ADE-203-369 Z HM5117400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary HITACHI T h e H ita c h i H M 5 1 1 7 4 0 0 B /B L is a C M O S dynam ic R A M organized 4 ,194,304-word x 4-bit. It em ploys the m ost advanced C M O S technology

Contextual Info: DRAWING MADE T H I S DRAWING I S UNPUBLISHED. COPYRIGHT 19 4 7 IN THI RD ANGLE PROJECTION RELEASED FOR P U BL I C A TI O N BY AMP INCORPORATED. ALL LÛC ,19 AD INTERNATIONAL RIGHT5 RESERVED. DIS T 25 R EVISIO N S ZONE 6. 99 [. 275] D D SPACES AT [ 2. 1. 54

17105-3G

Abstract: AD4218
Contextual Info: DRAWING MADE T H I S DRAWING 7 IN THI RD ANGLE PROJECTION I S UNPUBLISHED. 6 RELEASED FOR P U BL I C A TI O N COPYRIGHT 19 BY AMP INCORPORATED. ALL 5 3 4 2 LOC ,19 AD INTERNATIONAL RIGHT5 RESERVED. 1 D IS T 25 R EVISIO N S ZONE LTR DES CRIPTIO N DATE ECN AD4218

Contextual Info: KM416C256B/BL/BLL CMOS DRAM 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION The S a m sun g K M 4 1 6 C 2 5 6 B /B IV B L L is a C M O S high • Performance range: tRAC tCAC tRC KM416C256B/BIVBLL-5 50ns 15ns 90ns KM416C256B/BI7BLL-6

M5M4V18160

Contextual Info: MITSUBISHI LSIs M 5 M 4 V 1 8 1 6 0 C T P - 5 ,- 6 ,- 7 , -5S,-6S,-7S iS'c5<"S’ bl«1 FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) This is a family of 1048576-word by 16-bit dynamic RAM S, fabricated with the high performance C M OS process, and is ideal

d448

Abstract: d749 D1029 D1030 D1049 d60k
Contextual Info: bl E EUPEC D 3MD3ET7 0GG1331 633 • i U P E C Rectifier diodes Type If r m s m V r rm V rs m = V rrm + I f sm / ¡ 2dt I f avm ^ c V TO It R th J C O utline W j m ax 100 V A V 10 ms, 10 ms, tv i = tv j = tv j m ax tv j max tv j max tv j max 180°el sin.

bn137

Abstract: A95 optocoupler C1598 C1607 VCO MCl pos
Contextual Info: Ö U A L I T Y TE CHN OLOGIES CORP fiû D 1I T M b h f l S l D D O S T S B fi P 9T-H ’83 6N137 10 M B it/s LOGIC GATE MCL2601 HCPL-2601) PACKAGE D IM E N SIO N S Bl f t l ifl — T 6.86 (.270) 6.35 (.250) o r 0.36 (.014) 0.20 (.008) m • 9.65 (.380)

MG15G1AL3

Abstract: MG50G1BL3 mg30g1bl3 MG25M1BK1 MG30G1BL4 MG30G1JL1 MG50m1bk1 2-33c1a 2-22b1a MG200
Contextual Info: 213 — — * 2 -OA E2 Bl E1/ K ( C 2 ) B2 : NC Ì Ì 3 . x-f -v-f (T, ttfc*Œ z -f 7 f- > y m i (V) on I, V CE ft V be + J- î 7 y • 3 u ? ?fi' a m - - - K = 25°C ) V f ( u s) L I Ul , t , (V) R !h (,-c) , Ip ( u s) I? V be di/dt (A) CC/W) m - F §15