MG200 Search Results

Contextual Info: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .

MG200H2CK1

Abstract: tf3s cm7200
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hj’E=200 Min. (Ic=200A)

MG200H1AL2

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hjr|7=80 Min. (Ic=200A) . Low Saturation Voltage

MG200H1AL2

Abstract: iC 828 Transistor 828 TRANSISTOR equivalent MG200H1 transistor 828
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1AL2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain : hpE=80 Min. (Ic=200A) . Low Saturation Voltage

Z1506

Abstract: Toshiba MG200Q2YS40
Contextual Info: T O SH IB A MG200Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf = 0.5,ms Max. trr = 0.5^s (Max.) Low Saturation Voltage

MG20002YS40

Contextual Info: MG200Q2YS40 U n i t in m m HIGH P O W E R SW ITC H IN G APPLICATIO N S. M O T O R C O N T R O L APPLICATIO N S. • H igh I n p u t Im pedance • High Speed 4 P a st - on T ub #110 tf = 0 .5 /< s Max. t r r = 0.G/<s(Max.) • Low S a t u r a t i o n V o lta g e

Contextual Info: MG200Q1ZS40 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. C H O PPER A PPLIC A TIO N S. • • • • • High Input Impedance High Speed : tf=0.5,-/s Max. trr = 0.5,i/s (Max.) Low Saturation Voltage ; VCE (sat) = 4-0v (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

MG200N1US1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG200N1US1 HIGH P OWER S W I T C H I N G AP PL IC ATIONS. M OT OR CONT RO L APPL IC A TI ON S. . High Input Impedance . High Speed : tf = 1. Otis Max. trr= 0 •5(is (Max.) . Low Saturation Voltage: V c e (sat)= 5 .OV(Max.)

transistor 24

Abstract: MG200H1FL1 MG200H1FL1A
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200H1FL1A Unit in HIGH POWER SWITCHING APPLICATIONS. 1 9± 0.5 , MOTOR CONTROL APPLICATIONS. 19 j: 0.5 • The Collector is Isolated from Case. • With Built-in Free Wheeling Diodes. • High DC Current Gain : hjrg=80 Min.

MG200Q1US41

Contextual Info: TO SHIBA MG200Q1US41 M G 2 0 0 Q 1 US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf=0.5/^s Max. : trr = 0.5/^s (Max.) Low Saturation Voltage

Toshiba MG200Q2YS40

Abstract: LT-15V MG200Q2YS40 YS40 OHS03 JE transistor
Contextual Info: TOSHIBA MG200Q2YS40 M G 2 0 0 Q 2 YS4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • Unit in mm 4 -F ast-on Tab #110 High Input Impedance High Speed : tf= 0.5/^s Max. trr = 0.5/^s (Max.)

Contextual Info: TO SHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage

Contextual Info: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: MG200Q2YS60A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD Compact IGBT Series Module 200 Amperes/1200 Volts A D L J K W N M V E2 C1 C H B DETAIL "A" F E C2E1 U W R R T S Z Q P Y X X Q G C1 7 5 5 6 AA

FG5K

Abstract: MFS1-B MF-200 MF200-FR6K28H
Contextual Info: T-1% SUB-MINIATURE LAMP bjeesq Single-Chip Data Display Products •Bi-Pin, Bayonet, Flange, Groove, Screw, Wedge Bases For Detailed LED Data, See Discrete Section, MODEL 20C Model BP202“ 1 MB200 MF200t7J MG200 MS200 W B200 Bi-Pin Bayonet Flange Groove

Contextual Info: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: MG200xEI Series High Isolation, 2W Compact MiniDIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features:

MG212D-09E

Contextual Info: MG200xE Series Low Cost, 2W Compact MiniDIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Key Features: • 2W Output Power

FC-20 equivalent

Abstract: PC-1000 equivalent MG200J6ES61
Contextual Info: MG200J6ES61 MITSUBISHI IGBT Module MG200J6ES61 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG200M1UK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . The Collector is IsoLated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=200A’ . Low Saturation Voltage

Contextual Info: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

MG200M1FK1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1FK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain : hpE=100 Min. (Ic=200A)