BO 947 Search Results

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

2N3417

Abstract: NPN transistor ECB TO-92 transistor BO 540
Contextual Info: TO-92 2N3417 is NPN silicon planar transistor designed for general purpose AF medium power applications. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 50V Collector-Emitter Voltage VCEO 50V Emitter-Base Voltage VE BO 5V Collector Current IC Total Power Dissipation

servomoteur

Abstract: moteur pas a pas codeur incremental EL6022 BK9105 CX5020 EL6731 beckhoff el6751 DIN EN 66025 KL3458
Contextual Info: BECKHOFF New Automation Technology Aperçu des produits | 2009 PC Embarqué PC Industriel PC Industriel Bornes d‘E/S E/S EtherCAT Lightbus Boîtier IP 67 Technique d’Entraînement Motion TwinCAT Automatisation Cartes PC de Bus de Terrain, Switches PC Industriel

IEC 947 EN60947

Abstract: d4bn D4BS-15FS norme UL csa E76675 IEC947-5-1 moteur pas a pas EN60947-5-1 GS-ET-15 IEC529
Contextual Info: INTERRUPTEUR DE SECURITE ID4BS Interrupteur de sécurité à clé Clé de fonctionnement spéciale évitant les fraudes Large plage de température de fonctionnement : – 40 à 80 oC Contacts à manoeuvre EN60947–5–1 positive d’ouverture Pas de montage et forme du boîtier conformes à la

Contextual Info: 2 DATE REV ECN APP'D. BY 5 -6 -0 3 BO 5995 JM 0 3 -0 9 -0 4 B1 6351 JMB 1 -1 9 -0 6 B2 7441 JM 2 -9 -1 1 B3 9125 SMN 5 -2 3 -1 2 B4 9475 SMN NOTES: 0 .2 6 0 [ 6 . 6 0 ] 1 - PLUG KIT CONSISTS OF : PRE-INSERTED PLUG HOUSING & SHIELD LOAD BAR FERRULE 2 - MATERIALS :

BO5988

Abstract: 3 BO 356 5988 bo 947 BO 63 kt3 LED
Contextual Info: Sicherheitstechnik Not-Aus-Modul BO 5988 safemaster 0210952 • • • • • • • • • • • • • • • • Funktionsdiagramm • Taster Ein nach der EG-Richtlinie für Maschinen 98/37/EG nach IEC/EN 60 204-1, IEC/EN 60 204-1 Sicherheitskategorie 4 für Sofortkontakte nach EN 954-1

2T931A

Abstract: KT853 2T926A KT838A 2T803A 2T809A 2T904A 2T808A 2T603 2T921A
Contextual Info: g V ì^ fg : W SflÉptÉ! W ^ i$ î0 i0 û * W I I m ^7ù£-à.S& m p ,-À-& s i: r& mSÊmÈÈ •ï ' ^ f§ W % a s Ü lg S I W M 7 \ w Jkw s i 4; h# » ik « W 'ï illl ¡ P * te ili -X\ S I Iw 11 4-S U E S T am Ir ¿ « 1 1 1 » , ü i a Î3 & & C nPA BO H H M K

Contextual Info: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection

Contextual Info: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection

T1018

Abstract: T1022C DO215AA TSMBJ1005C TSMBJ1005CB TSMBJ1006C TSMBJ1024CB T1005C
Contextual Info: TSMBJ1005C thru TSMBJ1024CB 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • • • Bi-directional 100 AMP Thyristor Surge Protective Devices (TSPD) Bidirectional Transient Voltage Protection

BD946

Abstract: BD948 IN 3319 B
Contextual Info: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.

bo 947

Contextual Info: tC e i x d n e SUSTAINED PRODUCTS _ lin iU M H f M -947 DTMF Receiver The Teltone M-947 combines switched-capacitor and dig­ ital techniques to decode Dual-Tone Multifrequency DTMF signals to four-bit binary data. No prefiltering o f the DTMF signal is required. The M-947 is contained in a 22-pin DIP,

bo 947

Abstract: BDP947C dp947
Contextual Info: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B

th1018

Abstract: bo 947 THSMCJ1018C THSMCJ1022C MSC1370 TD5010
Contextual Info: THSMCJ1018C and THSMCJ1022C 8700 E. Thomas Road Scottsdale, AZ 85252 Tel: 480 941-6300 Fax: (480) 947-1503 FEATURES • • • • • • Bidirectional Transient Voltage Protection Initial Breakdown Voltage of 220 to 275 volts Positive Resistance Breakover Voltages of 300 to 350 volts maximum

2SB947

Abstract: 2SB947A
Contextual Info: Power T ransistors 2SB947, 2SB947A 2SB 947, 2S B 947A Silicon PNP Epitaxial Planar Type P ackage Dim ensions Low Voltage Switching • Features • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEcsao • H igh s p e e d sw itch in g • “F ull P a c k ” p ack ag e fo r sim plified m o u n tin g on a h e a t sink w ith one

Contextual Info: CCD Area Image Sensor MN37741PT 6.6mm type-1/3 1330k pixel CCD Area Image Sensor • Overview M Di ain sc te on na tin nc ue e/ d The MN37741PT is a 1/3-type, 1,330k pixel CCD area image sensor suitable for SXGA. The use of primary color (RGB Bayer arrangement) onchip color filters provides excellent color reproduction.

b0948

Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
Contextual Info: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.

Contextual Info: CCD Area Image Sensor MN37741PT 6.6mm type-1/3 1330k pixel CCD Area Image Sensor • Overview Part Number Size di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo .se ng ntin tin ty e ty ur

HCT4067M

Abstract: V6 69 diode
Contextual Info: 74HC/HCT4067 M SI 16-CHANNEL AN A LO G M U LT IP L E X E R /D E M U LT IP L E X E R FEATURES T Y P IC A L • Low "O N " resistance: 80 H typ. at V c c = 4.5 V 70 £2 (typ.) at V c c “ 6.0 V 60 (typ.) at V c c " 9-0 V typical "break before make" built-in

2SD471

Abstract: 2SB564 BO9477
Contextual Info: 2SD471 SILICON TRANSISTORS TO-92 The 2SB564 PNP and 2SD471 (NPN) are designed for use in driver and output stages of audio frequency amplifiers. ABSOLUTE MAXIMUM RATINGS ECB 30V Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO 25V Emitter-Base Voltage

2SC1675

Abstract: T8224
Contextual Info: IO-92B 2SC1675 Is designed for use in AM converter, AM/FM IF amplifier and local oscillator of AM/FM tuner. ABSOLUTE MAXIMUM RATINGS ECB Collector- •Bai Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction &. Storage Temperature

2SC2603

Abstract: 2SC2603 E 2SC2603 F
Contextual Info: TO-92B 2SC2603 is NPN silicon planar transistor designed for low power general purpose amplifiers. ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Operating Junction & Storage Temperature

ebc 300

Abstract: MPS A92 transistor MPS-A92
Contextual Info: PNP SILICON HIGH VOLTAGE TRANSISTOR TO-92A MPS-A92 is PNP silicon planar epitaxial transistor designed for general purpose applications requiring high breakdown voltage, low saturation voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS Collector-Emitter Voltage

F1243

Abstract: t1243
Contextual Info: Philips Semiconductors-Signetics Document No. 853-0040 ECN No. 94761 Date of issue October 7 ,1 988 Status Product Specification FAST Products FEATURES • High impedance NPN base Inputs for reduced loading 70pA in High and Low states • Low power, llght-bus loading