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    ROHM Semiconductor BD9465MUV-ME2

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    Philips Semiconductors BD946

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    BD946 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD946 Philips Semiconductors Silicon Epitaxial-Base Power Transistors Original PDF
    BD946 Magnatec Silicon Epitaxial Base Power Transistors Scan PDF
    BD946 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    BD946 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BD946 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BD946 Unknown Cross Reference Datasheet Scan PDF
    BD946 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BD946 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD946 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD946F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD946F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD946F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD946 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    DK53

    Abstract: dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513
    Text: BIPOLAR TRANSISTORS CROSS REFERENCE Industry standard 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 2SC4977 MJE102 BD699 2SA1046 BU808DFI equivalent 2n3055 replacement MJ2955 replacement BUH513

    STRS6307

    Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
    Text: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173


    Original     		PDF 2N3054 2N32741 2N4240 2N4908 2N3054A 2N3766 2N4273 2N4909 2N3055 2N3767 STRS6307 STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020

    DK53

    Abstract: dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037
    Text: Bipolar Transistors Cross Reference INDUSTY STANDARD 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3198 2N3202 2N3203 2N3232 2N3233 2N3235 2N3236 2N3238 2N3239 2N3240


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 DK53 dk52 BU724AS mje2055 2n3055 replacement BUX98PI BD263 BD699 BD292 2N5037

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948

    947f

    Abstract: No abstract text available
    Text: BD943F; BD945F BD947F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope w ith an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F. QUICK REFERENCE DATA BD943F 94SF 947F


    OCR Scan     		PDF BD943F; BD945F BD947F BD944F, BD946Fand BD948F. BD943F 947f

    BD946

    Abstract: BD948 IN 3319 B
    Text: BD944 BD946 BD948 PHILIPS INTERNATIONAL SbE ]> • 7H Q ô 2b 0043004 0T2 ■ P H IN SILICON EPITAXIAL BASE POWER TRANSISTORS T 33 ~ ~ P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD 943; 945 and 947.


    OCR Scan     		PDF BD944 BD946 BD948 BD944 T-33-19 BD946 G0M30Ô IN 3319 B

    Untitled

    Abstract: No abstract text available
    Text: BD944F;946F BD948F J V SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F


    OCR Scan     		PDF BD944F BD948F BD943F, BD945Fand BD947F. BD944F BD946F OT186.

    BD946

    Abstract: BD944 BD948 lc 945 p transistor BD943 IEC134
    Text: BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE DATA BD944 946 948


    OCR Scan     		PDF BD944 BD946 BD948 BD943; BD944 500mA -lc-250mA BD946 BD948 lc 945 p transistor BD943 IEC134

    946f

    Abstract: BD944F 948F BD947F BD943F BD946F BD948F
    Text: BD944F; 946F BD948F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT 186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F. QUICK REFERENCE DATA BD944F BD946F BD948F


    OCR Scan     		PDF BD944F; BD948F BD943F, BD945Fand BD947F. bd944f bd946f 7Z21MO 003ms5^ 946f 948F BD947F BD943F BD948F

    B0947

    Abstract: 947f BD944F BD943 transistor d 947f BD943F BD945F BD947F BD948F 7Z95293
    Text: BD943F; BD945F BD947F PHILIPS INTERNATIONAL 5fc,E ] • 7110fi5b DCm3ID7fl ÔTT M P H I N T - 3 3 ' 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, eachina S O T 186 envelope w ith an electrically insulated mounting base. PNP complements are B D 9 4 4 F , BD946Fand B D 948F.


    OCR Scan     		PDF BD943F; BD945F BD947F 7110fi2b OT186 BD944F, BD946Fand BD948F. BD943F T-33-09 B0947 947f BD944F BD943 transistor d 947f BD947F BD948F 7Z95293

    Untitled

    Abstract: No abstract text available
    Text: _ J \ _ BD944 BD946 BD948 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in audio output stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF BD944 BD946 BD948 BD943; CBD944 0Q34552

    b0948

    Abstract: BD944 B0943 BD943 b0944 b0946 BD946 BD948
    Text: dPO ^b BD944 BD946 BD948 A SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended fo r use in audio o u tp u t stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947. QUICK REFERENCE D A T A


    OCR Scan     		PDF BD944 BD946 BD948 BD943; BD944 BD948. 7Z82139 b0948 B0943 BD943 b0944 b0946 BD946 BD948

    2222C

    Abstract: BD944 945F
    Text: BD943F; BD945F BD947F PHILIPS INT ER NATIONAL 5fc,E ] • 711D02b D O ^ O T A fiTT M P H I N T -S l'O l SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SOT 186 envelope with an electrically insulated mounting base. PNP complements are BD944F, BD946Fand BD948F.


    OCR Scan     		PDF BD943F; BD945F BD947F 711D02b BD944F, BD946Fand BD948F. BD943F QQ43QA1 T-33-09 2222C BD944 945F

    946f

    Abstract: No abstract text available
    Text: BD944F;946F BD948F PHILIPS INTERNATIONAL SbE » • 7110fl2b 00430^5 17T ■ P H I N r - 7 ? - ' / cr SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.


    OCR Scan     		PDF BD944F BD948F 7110fl2b OT186 BD943F, BD945Fand BD947F. BD946F BD948F 946f

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BD947F

    Abstract: BD948F BD943F BD944F BD946F 948F
    Text: BD944F; 946F BD948F PHILIPS INTERNAT IO NAL SbE D • 7110fl2b 0043CHB 17T « P H I N T - 7 ? *f SILICON EPITAXIAL POWER TRANSISTORS PNP silicon epitaxial power transistors each in a SOT186 envelope with an electrically insulated mounting base. NPN complements are BD943F, BD945Fand BD947F.


    OCR Scan     		PDF BD944F BD948F 7110fl2b 0043CHB OT186 BD943F, BD945Fand BD947F. BD946F BD947F BD948F BD943F 948F

    JE350

    Abstract: je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55
    Text: INDUSTRY STANDARD SGS-THOMSON BD135 BD136 BD137 BD138 BD139 BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 BD140 BD159 BD160 BD165 BD166 BD167 BD159 SGS-THOMSON PAGE NEAREST BD157 BD158 2N5878 BD437 BD438 BD439 BD440 BD441 BD442 BD237 BD238 BD168


    OCR Scan     		PDF BD135 BD136 BD137 BD138 BD139 BD140 BD142 BD144 BD157 BD158 JE350 je180 MJ13004 TP33C BD325 JE172 BDX48 JE340 bd160 BUT55

    BD944

    Abstract: BD946 BD943 BD948 LE17
    Text: S e m e la b p ic SEME Coventry Road. Lutterworth Leicestershire LE17 4JB. England Sales telephone: 0455 556565 AQAP-1 Licence No 2M8S02 ^ Licence No. M/103&#39;CECC/UK ESA Admin telephone: 0455 552505 Telex: 341927 SMLLUT G Fax: 0455 552612 Approval Pen<5ing


    OCR Scan     		PDF 2M8S02 BD943; BD944 BD946 BD948 -VC80 BD944 BD946 BD943 BD948 LE17

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    bc 945

    Abstract: BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135
    Text: FA - Bauelementeinformation VT Niederfrequenztransistoren, nach Bauformen geordnet Transistoren im TO-92-Gehäuse Typ o NPN PNP BC 182 BC 184 BC212 BC214 BD 237 BC238 BC239 BC 307 BC 308 BC 309 BC 327 BC 328 BC 337 BC 338 BC 414 BC 416 BC 546 BC 548 BC 549


    OCR Scan     		PDF O-92-Gehà BC238 BC309 O-126 OT-32. O-220-A. OT-78 T0-220-B. bc 945 BC 945 p BC 948 BC 937 BD 139 N ic 933 bd BD135N bu110 bd 3055 bd135