BOWMAR Search Results

Contextual Info: « h asr-v^. - v , ' i ' m w w i Bowmarlflfhite p r o g r a n Îm a b l ÈTe e p r o m Technology 8020 PIN DIAGRAM N /C C A12C 2 28 FEATURES HVcc 21 3 WE at E 3 26 U N /C A6C 4 25 D A 8 A 5C 5 A4£ 6 24 1 A9 A 3C 7 A 2C 8 22 DO E 21 3 A 1 0 A1C 9 20 D C E

Contextual Info: BowmarlfU hite 8KRAM x 8 BIT Technology 8021 AND 8021-1 PIN DIAGRAM N /C C 1 A12C 2 A 7C 3 A6C 4 FEATURES 28 H V c c 27 U W E 26 J N / C 25 1AQ A5C 5 A4 C 6 24 J A 9 23 D A 1 1 A3C 7 22 J O E 21 □ A 1 0 A 2C 8 A 1C 9 • • • • • 20 HC E 1 A 0 C 10

203d6

Contextual Info: Bowmar/lHfhite 128K x 8 BIT SRAM C8-M128 SERIES Technology PIN DIAGRAM NC □ 1 A16 C 2 A14 □ A12 □ A7 32 3 V c c 31 □ A 15 3 30 3 N C 4 24 □ W E c 5 6 28 3 A 13 27 □ A 8 A6 c A5 c A4 A3 c 8 c 9 c 10 A1 □ 11 AD □ 12 21 DO □ 13 20 3 D6 D1 □

Contextual Info: BOWMAR/WHITE TECHNOLOGY 55E D W W h i t e Technology, Inc. • 15lj3fcicjfl □ □ □ □ 3 6 7 ^ l^-Z7 _ MEMORY PRODUCTS M4194E Configurable 4-Megabit EEPROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES ■ User Configurable in 3 Modes * 512K Bytes x 8 Bits

8020

Abstract: A12C
Contextual Info: « 1 . w r } ~ . '¡ M l Bowmarlfllhite Tech n o lo g y 8K x 8 BIT PROGRAMMABLE EEPROM 8020 PIN DIAGRAM N/C c 1 A12 c 2 A7C 3 A6 c 4 A5 c 5 A4 c 6 A3 c 7 A2 c 8 A1 L 9 AO C 10 28 D Vcc 27 3 WE 26 J N /C 25 HA8 24 3 A9 23 D A11 22 POE 21 □ A10 20 n e i l/OO C 11

A12C

Abstract: 8020
Contextual Info: « 1 . w r } ~ . '¡ M l Bowmarlfllhite Tech n o lo g y 8K x 8 BIT PROGRAMMABLE EEPROM 8020 PIN DIAGRAM N/C c 1 A12 c 2 A7C 3 A6 c 4 A5 c 5 A4 c 6 A3 c 7 A2 c 8 A1 L 9 AO C 10 28 D Vcc 27 3 WE 26 J N /C 25 HA8 24 3 A9 23 D A11 22 POE 21 □ A10 20 n e i l/OO C 11

Contextual Info: BOLJMAR/UHITE 156369Ö BOWMAR/WHITE TECHNOLOGY TECHNOLOGY 7S D E§ ISL^bTÖ OOOOHSS 7 5 c Q£L£$2 3 n T - S ^ 'O ' m ° W l H J h a 4 VOLT REFERENCE HT 6.4B SERIES A, i t e FEATURES Extremely Stable Voltage Over a Wide Temperature Range Eliminates Need for Current

Contextual Info: -ly -.1 r w Bowmar/lfllhite 32K x 8 BIT PROGRAMMABLE EEPROM 8023 T e c h n o lo g y PIN DIAGRAM A 14C 1 A 12C 2 A7C 3 A6C 4 A5C 5 A4 [I 6 A3C 7 A2C 8 A1C 9 ADC 10 l/OOC 11 1/01 C 12 I /0 2 C 13 VssC 14 28 27 26 25 24 FEATURES 3 Vcc □ WE □ A13 Voltage: +5V and Gnd

A14C

Contextual Info: Bowmar Ulfhite P W lf llit r / — m ie 3 2 Kx8 B ,T PROGRAMMABLE EEPROM Technology 8023 PIN DIAGRAM A14C 1 A12C 2 28 3 Vcc 27 □ WE A7C 3 A6 C 4 26 □ A13 25 □ A8 24 □ A9 23 □ A11 A5C 5 A4 £ 6 A3C 7 A2C 8 A 1C 9 22 DO E 21 □ A10 20 D C E ADC 10

Contextual Info: 1 5 6 3 6 9 8 BOWMAR/WHITE TECHNOLOGY : 7Sf. n n ? ^ 7 BOWNAR/WH]^^ ”?5 •:ir. W hO/ DE I I S b B b T Û G 0 0 D S 3 2 fl r r jl DIGITALLY PROGRAMMEED 1 \ | AMPLIFIER 1 1 W d T “7 A h it e 1 y MODEL 8089 "^ Advance « * Ê g |£ S _ FEATURES ^ OperatincfTemperature Range

8090 microprocessor

Abstract: 8s040 BOWMAR WHITE TECHNOLOGY Erasable Programmable Logic Device 610
Contextual Info: 3: '^-sgESii 'ip S g l pS iü S Bowmar White i*wj Wî^ 3 3 ^ i 128K x 8 BIT PROGRAMMABLE EEPROM 8090 Technology FEATURES Voltage: +5.0V and Gnd Operating Temperature: -55° to +200° C Operating Current: 10mA Typ Standby Current: 1.0mA (Typ) Programming Temp: -55° to +180° C

Contextual Info: BiO UM AR / UJH'XT E TECHNOLOGY 07E D | WWhite • A wholly owned subsidiary of BoWmar Instrument Corporation Units -55 +150 °c S upply Voltage, O perating 4.75 5.25 VDC S upply Current, O perating — 35 — mA S upply Current, Sleep Mode — 2.0 — mA

Contextual Info: 1563698 BOWMAR/ W H I T E TECHNOLOGY BOliiMAR/liJHITE TECHNOLOGY 1 7 97D D E l ISkBbTfl W White D 00314 0000314 *P -S 0 -2 -3 CRYSTAL CLOCK OSCILLATOR/DIVIDER T e c h n o lo g y . Inc* i l i i i i l l Ì É FEATURES ' .• -55 to .+J200^C Operation , § f

bowmar

Contextual Info: T ech n o lo M 0D ELM 4194K bit I ±~«4SS FEATURES User Configurable 3 Modes: 512K Bytes x 8 Bits 256K Bytes x 16 Bits 128K Bytes x 32 Bits Single Power, 5.0 Volts Operation Low Power Standby Compatible with all Microprocessors 100% CM OS Design MIL Temperature Range

Contextual Info: W White Technology, Inc. 1 12 23 o O l 9 O c& 34 45 1/024 O O l'0 'i 1/025 O c s iO 1/030O C>Oio C>GND Ol»13 1/026 O w ia O 1/029 O 1/028 O O O 0 is WE-128K32-XHX 56 < i O l» a MEMORY PRODUCTS I/Os, 0 •- 4 Megabit CMOS EEPROM Module 0^13 O i/Oii 0 l/0 ,2

marking HZA

Abstract: QML-38534 k8120c WMS128K8-15DJ
Contextual Info: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA APPROVED 98-06-22 K. A. Cottongim Add device type 11. Change limits Iq q and I c C D R I in table I. REV SHEET REV A A A A A A A A A A A SHEET 15 16 17 18 19 20 21 22 23 24 25 REV A A A A A A A A A A A A A A SHEET

Device-List

Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
Contextual Info: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which

Contextual Info: . BOUM A R /U H IT E TECHNOLOGY SDE D • 15^=10 W W n i t e Technology, Inc. D aaaS3n T il ■ Btil T 7 = . ^ MEMORY PRODUCTS PRELIMINARY WS-64M-XX 3.5" 8 8 .9 m m 1 1 2 3 4 DO D1 02 5 6 7 8 e 04 05 10 11 12 03 De 07 08 09 0)0 011 D12 D13 D14 016 E E CM

20 pin IC AL 6001

Contextual Info: 43 C 0 0 1 6 3 D 15 6 3 6 9 8 B O W M A R / W H I T E T E C H N O L O G Y - -IShabìfl O O D D l b B -T-58-07 - 4 I PRECISION VOLTAGE REFERENCE I I 6001 MIL TEMPERATURE COMPONENTS -x- ^ ^Wfi • FEATURES

Contextual Info: ^ _ _ _ _ 1.2 — 1.6 GHz lT W hite L0W N0ISE a m p l if ie r Technology, Inc. i ü ' r r M0DEL6011 v . . FEATURES • • • • • • Low Noise <4.5dB 1.2GHz to 1.6GHz Operation High Gain: 15dB typ. Operating Temp.: -55° C to +125°C CMOS/TTL Compatible Logic Signal

Contextual Info: 1563698 B OW M AR / W HI T E BOUMA R / U H I T E I T W h TECHNOLOGY TECHNOLOGY 9 7D 00322 T? 15^3^0 A ^ W B S S S tL T-5T-/H3 ^ S E R IE S 8000 A N D 8001 nmnnri onhalHI.lru nl-R iiw m af lnfllniiT ipnI.C ornoroll IW 0D 0D 32E H YB R ID V O LTA G E R EG U LA TO R S

T0002

Abstract: WF-1024K8-150I WF-1024K8-150M
Contextual Info: W W h ite Technology, Inc. MEMORY PRODUCTS W F -1 0 2 4 K 8 -1 5 0 1 Megabyte x 8 Flash PROM Memory Module ADVANCE INFORMATION SUBJECT TO CHANGE FEATURES • Flash Chip Erase * 1 Second Page Erase * 8 Pages Total ■ Fast Programming * 10uSec Typical Byte

la 76805 volt on pin

Abstract: intel 8708 eprom M3002 Pulse M3001 eprom 8708 2316a rom UPP-103 interfacing 8275 crt controller with 8086 intel 1402a Pascall
Contextual Info: Intel Corporation 3065 Bowers Avenue • Santa Clara, CA 95051 Telephone: 408 987-8080 TWX: 910-338-0026- Telex: 34-6372 inter Component Data Catalog 1978 Numerical and Functional Indexes 1 General Information 2 Random Access Memory 3 Read Only Memory 4

80C31BA

Contextual Info: W W h ite Technology, Inc. COMPUTER PRODUCTS C8-P31F-64 80C31 Microcontroller With 64K Flash and 8K SRAM FEATURES • 80C31-Based * MCS-51 A rchitecture * Speed to 16MHz * 150nS W rite Cycle Tim e ■ M em ory * 64K Bytes of FLASH Program M em ory * 8K Bytes of SRAM