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    Telefunken Semiconductor GmbH & Co Kg BPV20F

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    Bristol Electronics BPV20F 412
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    tfk BPV20F

    Photo Diode
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    ComSIT USA BPV20F 14,390
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    tfk BPV20FAS21

    Photo Diode
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    ComSIT USA BPV20FAS21 10,000
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    BPV20F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BPV20F Vishay Intertechnology Silicon PIN Photodiode Original PDF
    BPV20F Vishay Telefunken Photodiode, PIN Module, 0.35A/W Sensitivity, 0.1uSec, 2nA Original PDF
    BPV20F Telefunken Electronic Photo Detectors / Phototransistors / Photo Pin Diodes Scan PDF

    BPV20F Datasheets Context Search

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    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


    Original
    PDF BPV20F BPV20F 950nm) D-74025 20-May-99

    950NM

    Abstract: BPV20F
    Text: TELEFUNKEN Semiconductors BPV 20 F Silicon PIN Photodiode Description 94 8387 BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


    Original
    PDF BPV20F 950nm) D-74025 950NM

    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


    Original
    PDF BPV20F BPV20F 950nm) D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F D-74025 08-Mar-05

    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: BPV20F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F D-74025 20-Apr-04

    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


    Original
    PDF BPV20F BPV20F 950nm) D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPV20F Vishay Telefunken Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters


    Original
    PDF BPV20F BPV20F 950nm) D-74025 20-May-99

    Untitled

    Abstract: No abstract text available
    Text: BPV20F VISHAY Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F D-74025 26-Mar-04

    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters l p=950nm .


    Original
    PDF BPV20F BPV20F 950nm) D-74025 15-Jul-96

    BPV20F

    Abstract: No abstract text available
    Text: BPV20F Vishay Semiconductors Silicon PIN Photodiode Description BPV20F is a high speed and high sensitive PIN photodiode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally matched to GaAs or GaAs/GaAlAs IR emitters λ p = 950 nm .


    Original
    PDF BPV20F BPV20F 08-Apr-05

    near IR sensors with daylight filter

    Abstract: light sensing circuit project BPW34 application note BPW20RF
    Text: TEKT5400S www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: side view lens • Dimensions L x W x H in mm : 5 x 2.65 x 5 • High radiant sensitivity • Daylight blocking filter matched with 940 nm


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    PDF TEKT5400S TSKS5400S 2002/95/EC 2002/96/EC TEKT5400S 2002/95/EC. 2011/65/EU. JS709A near IR sensors with daylight filter light sensing circuit project BPW34 application note BPW20RF

    BPW34 application note

    Abstract: No abstract text available
    Text: VSMS3700 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 950 nm • High reliability • Angle of half intensity: ϕ = ± 60°


    Original
    PDF VSMS3700 VEMT3700 J-STD-020 VSMS3700 AEC-Q101 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A BPW34 application note

    BPW34 application note

    Abstract: APPLICATION NOTE BpW34 lux meter calibration RB94
    Text: VSMF4720 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 870 nm • High reliability


    Original
    PDF VSMF4720 VSMF4720 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 BPW34 application note APPLICATION NOTE BpW34 lux meter calibration RB94

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original
    PDF VMN-MS6520-1311 TSSP4038

    tept5600 response time

    Abstract: Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000
    Text: w w w. v i s h a y. c o m Selector Guide Infrared Emitters, Photo Detectors and optical sensors Op t o e l e c t r o n i cs V I S HAY INTERTE C HNOLO G Y , IN C . infrared emitters, Photo Detectors, and Optical Sensors introduction as one of the world’s leading suppliers of infrared emitters, photo detectors, and optical sensors, Vishay offers an extraordinarily


    Original
    PDF emit4-9337-2920 VSA-SG0041-0512 tept5600 response time Application NOTES TSAL4400 BPV11F Photo interrupter application notes SMD Transistor 1020 "Photo Interrupter" dual transistor CNY70 cny70 datasheet TEMT6000 TCND5000

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s

    BPW34 application note

    Abstract: photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R
    Text: VISHAY Vishay Semiconductors Measurement Techniques Introduction Characteristics of optoelectronics devices given in data sheets are verified either by 100 % production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be


    Original
    PDF 14-Apr-04 BPW34 application note photodiode application luxmeter APPLICATION NOTE BpW34 BPW34 osram BPW20RF BPW21R osram phototransistor application lux meter BPW41N luxmeter detector BPW21R

    BPW41 circuit application

    Abstract: OSRAM IR emitter
    Text: VSMG3700 Vishay Semiconductors High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero FEATURES • Package type: surface mount • Package form: PLCC-2 • Dimensions L x W x H in mm : 3.5 x 2.8 x 1.75 • Peak wavelength: λp = 850 nm • High reliability


    Original
    PDF VSMG3700 J-STD-020 AEC-Q101 2002/95/EC 2002/96/EC VSMG3700 2002/95/EC. 2011/65/EU. JS709A BPW41 circuit application OSRAM IR emitter

    Untitled

    Abstract: No abstract text available
    Text: Temic BPV20F S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV 20F is a high speed and high sensitive PIN photo­ diode in a plastic package with a cylindrical side view lens. The epoxy package itself is an IR filter, spectrally m atched to G aA s or G aA s/G aA IA s IR em itters


    OCR Scan
    PDF BPV20F BPV20F 950nm 05mW/cm 15-Jul-96 15-Jul

    c1g smd

    Abstract: bpv10nf TEMD2100
    Text: Tem ic S e m i c o n d u c t o r s Selector Guide Infrared Emitting Diodes Characteristics Package Type +/-<p 1 ¡e /m W /sr @ Ip /m A { V p /V @ Ip /m A tr , tf / ns Standard IR Emitters GaAs 950 nm in Plastic Package CQY36N ais=— = r d ] -


    OCR Scan
    PDF CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: VISHAY Vishay Telefunken Selector Guide Detectors Photo Transistors C haracteristics Dim. Package Fig- Type Photo Sensitive Area / mm 2 lca / m A @ Ee /m W /c m 2 + /- q¡ V c e = 5 V, X = 950 nm 1 tr / (j.s @ (lc = 5 mA, X = RL /k Q 950 nm) Photo Transistors in Clear Plastic Package


    OCR Scan
    PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na