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    VSLB3940 Search Results

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    VSLB3940 Price and Stock

    Vishay Semiconductors VSLB3940

    EMITTER IR 940NM 100MA RADIAL
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    DigiKey VSLB3940 Bulk 141,969 1
    • 1 $0.66
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    Vishay Intertechnologies VSLB3940

    IR EMITTER HIGH SPEED.940NM 3MM 22DEG-e2 - Bulk (Alt: 76R1477)
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    Avnet Americas VSLB3940 Bulk 13 Weeks, 3 Days 1
    • 1 $0.51
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    VSLB3940 Bulk 10 Weeks 5,000
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    Mouser Electronics VSLB3940 16,745
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    Verical VSLB3940 205 125
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    Arrow Electronics VSLB3940 32 10 Weeks 1
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    Newark VSLB3940 Bulk 657 1
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    Future Electronics VSLB3940 Bulk 10 Weeks 5,000
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    TTI VSLB3940 Bulk 15,000 5,000
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    TME VSLB3940 2,330 1
    • 1 $0.56
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    • 100 $0.22
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    Avnet Asia VSLB3940 12 Weeks 5,000
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    Chip1Stop VSLB3940 Bulk 205
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    EBV Elektronik VSLB3940 11 Weeks 5,000
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    New Advantage Corporation VSLB3940 5,000 1
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    Vishay Intertechnologies VSLB3940-QS21

    IR Emitter 940nm 65mW/sr 100mA 1.6V 2-Pin T-1 T/R - Tape and Reel (Alt: VSLB3940-QS21)
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    Avnet Americas VSLB3940-QS21 Reel 10,000
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    EBV Elektronik VSLB3940-QS21 11 Weeks 2,000
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    Vishay Intertechnologies TEFD4300F

    Photodiodes T-1 770 to 1070nm +/-20 deg
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    Mouser Electronics TEFD4300F 12,147
    • 1 $0.64
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    TTI TEFD4300F Reel 10,000 5,000
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    Vishay Intertechnologies TEFD4300

    Photodiodes T-1 350 to 1120nm +/-20 deg
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    Mouser Electronics TEFD4300 7,936
    • 1 $0.5
    • 10 $0.337
    • 100 $0.258
    • 1000 $0.232
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    TTI TEFD4300 Reel 5,000
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    VSLB3940 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VSLB3940 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH SPEED.940NM 3MM Original PDF

    VSLB3940 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VSLB3940

    Abstract: No abstract text available
    Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 11-Mar-11

    BPW46

    Abstract: BPW34 osram
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 BPW46 BPW34 osram

    VSLB3940

    Abstract: J-STD-051 VISHAY VSLB3940 DATASHEET VISHAY VSLB3940
    Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs, DDH FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 VSLB3940 2002/95/EC 2002/96/EC 18-Jul-08 J-STD-051 VISHAY VSLB3940 DATASHEET VISHAY VSLB3940

    Untitled

    Abstract: No abstract text available
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 VSLB3940 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: VSLB3940 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: p = 940 nm • High speed • High radiant power


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12

    VSLB3940

    Abstract: VISHAY VSLB3940 DATASHEET
    Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 18-Jul-08 VISHAY VSLB3940 DATASHEET

    Untitled

    Abstract: No abstract text available
    Text: VSLB3940 Vishay Semiconductors High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW FEATURES • Package type: leaded • Package form: T-1, clear epoxy • Dimensions: Ø 3 mm • Peak wavelength: λp = 940 nm • High speed • High radiant power • High radiant intensity


    Original
    PDF VSLB3940 2002/95/EC 2002/96/EC VSLB3940 18-Jul-08

    TEFD4300

    Abstract: APPLICATION CIRCUIT OF TSAL4400
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original
    PDF TEFD4300 VSLB3940, TSUS4300, TSAL4400 2002/95/EC 2002/96/EC TEFD4300 2011/65/EU 2002/95/EC. APPLICATION CIRCUIT OF TSAL4400

    Untitled

    Abstract: No abstract text available
    Text: TSSP4P38 www.vishay.com Vishay Semiconductors IR Mid Range Proximity Sensors FEATURES • Up to 2 m for proximity sensing • Uses modulated bursts at 38 kHz • 940 nm peak wavelength • Photo detector and preamplifier in one package • Low supply current


    Original
    PDF TSSP4P38 TSSP4P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    HAND DRYER CIRCUIT DIAGRAM

    Abstract: FAUCET SENSOR CIRCUiT Urinal SENSOR CIRCUiT IR SENSOR HAND DRYER CIRCUIT elevator Door TSAL6200 proximity sensor faucet Reflective Sensor IR Parking sensor elevator door sensor sensor faucet circuit
    Text: TSSP58P38 www.vishay.com Vishay Semiconductors IR Detector for Mid Range Proximity Sensor FEATURES • Up to 2 m for proximity sensing • Receives 38 kHz modulated signal • 940 nm peak wavelength • Photo detector and preamplifier in one package • Low supply current


    Original
    PDF TSSP58P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 HAND DRYER CIRCUIT DIAGRAM FAUCET SENSOR CIRCUiT Urinal SENSOR CIRCUiT IR SENSOR HAND DRYER CIRCUIT elevator Door TSAL6200 proximity sensor faucet Reflective Sensor IR Parking sensor elevator door sensor sensor faucet circuit

    sharp laser diodes

    Abstract: TSOP855
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original
    PDF vse-db0090-1010 sharp laser diodes TSOP855

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original
    PDF VMN-MS6520-1311 TSSP4038

    Untitled

    Abstract: No abstract text available
    Text: TSSP4P38 www.vishay.com Vishay Semiconductors IR Mid Range Proximity Sensors FEATURES • Up to 2 m for proximity sensing • Uses modulated bursts at 38 kHz • 940 nm peak wavelength • Photo detector and preamplifier in one package • Low supply current


    Original
    PDF TSSP4P38 TSSP4P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Physics and Technology

    Abstract: physics pn junction diode structure
    Text: Physics and Technology www.vishay.com Vishay Semiconductors Physics and Technology EMITTERS Materials Infrared emitting diodes IREDs can be produced from a range of different III-V compounds. Unlike the elemental semiconductor silicon, compound III-V semiconductors


    Original
    PDF 06-Oct-14 Physics and Technology physics pn junction diode structure

    Untitled

    Abstract: No abstract text available
    Text: TEFD4300 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Suitable for visible and near infrared radiation • Fast response times


    Original
    PDF TEFD4300 VSLB3940, TSUS4300, TSAL4400 TEFD4300 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    packaging

    Abstract: No abstract text available
    Text: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF


    Original
    PDF TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging

    80 CODE

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. IR RECEIVERS HEIMDALL BELOBOG Top Performance in a Miniature Double Lens Package - Two Versions for Narrow and Wide Angle Field of Vision Superior Performance and Very Low Profile Design for Tight Spaces PANHEAD Universal Surface


    Original
    PDF TSSP4P38 VSLB3940 Si2302DS TSSP6038 VMN-MS6938-1408 80 CODE

    HAND DRYER BLOCK DIAGRAM

    Abstract: HAND DRYER CIRCUIT DIAGRAM
    Text: TSSP58P38 www.vishay.com Vishay Semiconductors IR Detector for Mid Range Proximity Sensor FEATURES • Up to 2 m for proximity sensing • Receives 38 kHz modulated signal • 940 nm peak wavelength • Photo detector and preamplifier in one package • Low supply current


    Original
    PDF TSSP58P38 TSSP58P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 HAND DRYER BLOCK DIAGRAM HAND DRYER CIRCUIT DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: TSSP4P38 www.vishay.com Vishay Semiconductors IR Mid Range Proximity Sensors FEATURES • Up to 2 m for proximity sensing • Uses modulated bursts at 38 kHz • 940 nm peak wavelength • Photo detector and preamplifier in one package • Low supply current


    Original
    PDF TSSP4P38 TSSP4P38 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


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    PDF element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . OPTOELECTRONICS Proximity Sensors Proximity Sensing from 2 mm to 2 m Many applications require a sensor that detects not only the presence of an object, but also its relative proximity. Vishay’s proximity sensors emit pulses of infrared light which reflect off an object back to the


    Original
    PDF VMN-PL0479-1404

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radiant Intensity up to 65 mW/sr Infrared Emitters 940 nm High-Speed, High-Power Emitters with High Radiant Intensity, Tight Angular Distribution of Emitted Light and Power


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    PDF AEC-Q101 audi40 VSMB149402 VSMB14942 VSMB2020X01 VSMB2943GX01 VSMB2943RGX012 VSMB2943SLX01 VSMB3940X01 VMN-PT0210-1403