BPW 10 NF Search Results

sk k 1191

Abstract: fll100 PHOTOVOLTAIC CELL
Contextual Info: TELEFUNKEN ELECTRONIC 17E P • fl'iHOQ'ib DOPfiBflb 0 BPW 20 ■OTILIIFWKIMelectronic CrMtiw Ttdw togies r - w - s v Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: • Log. correlation between open circuit voltage and illuminance from 10"a till 10 ’ Ix

Contextual Info: BPW 20R VlSfrlAY Vishay Telefunken Silicon PN Photodiode Description BPW 20R is a planar Silicon PN photodiode in a hermetically sealed short TO -5 case, especially de­ signed for high precision linear applications. Due to its extremely high dark resistance, the short cir­

PHOTOVOLTAIC CELL

Abstract: "PHOTOVOLTAIC CELL" bpw20 photovoltaic cell sensor photovoltaic sensor BPW 10 nf fotodiode 74138 DIN5033 0175A1
Contextual Info: BPW 20 'W Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: Sensor für die Lichtmeßtechnik Application: Sensor for light m easuring purposes Besondere Merkmale: Features: • Für Fotodioden- und Fotoelem ent-Betrieb

PHOTOVOLTAIC CELL

Abstract: BPW20 "PHOTOVOLTAIC CELL" telefunken ha 800 BPW 10 nf DIN5033 telefunken ra 200 telefunken service
Contextual Info: TELEFUNKEN ELECTRONIC 17E D TTIlLglFWOKliM electronic • fi^SDD^b DGDfiBflb 0 BPW 20 _ Cm*W«technologies IAL GG t - w - s y Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: , • For photodiode and photovoltaic cell

DIN5033

Abstract: telefunken ha 750 m BPW35 bpw photodiode
Contextual Info: TELEFUNKEN ELECTRONIC 17E d • f i ^E oa ^b oooams Ô IALGG BPW 35 ■irilLHFttiMKlM e le c tro n ic C n a t i w ü K h n o io g tt s Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Features: • Large radiant sensitive area

BPW21

Abstract: "PHOTOVOLTAIC CELL"
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'JSDQSb DDQÔ3R2 h H A L 66 BPW 21 ¥I[LilP«KliKI electronic ; Creati*'ftchootog'ws Silicon PN Planar Photodiode Applications: Sensor in exposure and color measuring purposes features: • Linear correlation between short circuit

Photo diode TFK S 186 P

Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission

near IR sensors with daylight filter

Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Contextual Info: Vishay Telefunken Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

near IR sensors with daylight filter

Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Contextual Info: Vishay Semiconductors Measurement Techniques Introduction The characteristics of optoelectronics devices given in the data sheets are verified either by 100% production tests followed by statistic evaluation or by sample tests on typical specimens. These tests can be divided into

PHOTOVOLTAIC CELL

Abstract: BPW21 BPW 10 nf bpw photodiode Fotodiode BPW 21 "PHOTOVOLTAIC CELL" 73145 ph sensor 21BPW fotodiod
Contextual Info: Silizium-PN-Planar-Fotoelement/Fotodiode Silicon PN Planar Photovoltaic Cell/Photodiode Anwendung: S e n s o r fü r d ie F o to b e lic h tu n g s - und F a rb -M e ß te ch n ik A p p lica tio n : S e n so r in e x p o s u re a n d c o lo u r m e a s u rin g p u rp o se s

BPW-20R

Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
Contextual Info: Vishay Telefunken Physics and Technology Emitters Materials vt vt 12.99 IRED Chips and Characteristics At present, the most popular IRED chip is made only from GaAs. The structure of the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200

BPW 10 nf

Contextual Info: TELEFUNKEN ELECTRONIC 17E » • ôTEODTb D o o a m s a IALGG BPW 35 TTIUMPMKIN] electronic Cnativ« üKhnciogvs Silicon PN Planar Photodiode Applications: Sensor for light measuring purposes Natures: • No light memory effect • Large radiant sensitive area

BPW21R

Abstract: BPW21 pn photodiode BPW2
Contextual Info: TELEFUNKEN Semiconductors BPW 21 R Silicon PN Photodiode Description 94 8394 BPW21R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

fototransistor BPW 39

Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Contextual Info: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.

bpw uv photodiode

Abstract: BPW20 BPW20R
Contextual Info: TELEFUNKEN Semiconductors BPW 20 R Silicon PN Photodiode Description BPW20R is a planar Silicon PN photodiode in a hermetically sealed short TO–5 case, especially designed for high precision linear applications. Due to its extremely high dark resistance, the

cqx 87

Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157

Photo diode TFK S 186 P

Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Contextual Info: Infrared Emitters and Detectors Data Book 1997 Contents General Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Alphanumeric Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

bpx28

Abstract: Germanium diode OA 182 TAA920 fy sot 143 BSV57B AC187K BPW14 BF194 AD 161 BPX34
Contextual Info: Halbleiter TELE FUN KEN Übersicht Sem iconductor survey 1972/1973 B2/V.3.20/0872 D ie s e Liste soll die W ahl g ee ig n e te r H albleiter-Typen fü r die verschiedenen A n w en du ng szw ecke e rleich te rn . Z ur besseren Ü b e rs ic h t sind nur die w e se ntlich en D aten

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

TCA4401

Abstract: CD 4049 BP TCA440 IC CD 4027 diode zener BZX 61 C 10 tda4050 LD57C diode BAY61 receiver tca440 BAY61
Contextual Info: Remote Control Appnote 34 1. Simple Infrared Remote Control with Low Current Consumption gate 1 drops below the minimum H-level threshold and thus the oscillation is interrupted. The time constant of R1C1-circuit is dimensioned for a burst length of 1 ms. The 1 nF capacitor,

TAA761A

Abstract: TDA4050B BPW32 TAA761 FLH101 TCA335A tda4050 TCA965 equivalent tca965 transistor bc238
Contextual Info: Light Activated Switches Appnote 33 able and adjustable in its position an efficiency maximum can be achieved. Miniature Light Barrier for a Shaft Position Encoder or a Revolution Counter Figure 2. Miniature light barriers are required for shaft position encoders,

TDA3047

Abstract: BPW50 TDA3047 application notes bpw 50 TDA3047P TDA3047T TDA3048 Synchronous demodulator BPW50D
Contextual Info: TDA3047 _ INFRARED RECEIVER The TD A 3047 is for infrared reception w ith low power consumption. The difference between the TDA3047 and TDA3048 is the polarity o f the output signal. Features • • • • • • H.F. am plifier w ith a control range o f 66 dB

TDA9201

Abstract: P6202A bpw 50 2SC3596 2SC3596E HP4195A
Contextual Info: TDA9201 WIDE BAND VIDEO PREAMPLIFIER PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ CURRENT OUTPUT up to 300mA 120MHz (-3dB) BANDWIDTH 3nsec RISE/FALL TIME BRIGHTNESS AND CONTRAST DC CONTROLLED INTERNAL CLAMPING PULSE GENERATOR CONTRAST PRE-ADJUST FOR COLOR

TDA9201

Contextual Info: TDA9201 WIDE BAND VIDEO PREAMPLIFIER PRELIMINARY DATA • ■ ■ ■ ■ ■ ■ ■ ■ CURRENT OUTPUT up to 300mA 120MHz (-3dB) BANDWIDTH 3nsec RISE/FALL TIME BRIGHTNESS AND CONTRAST DC CONTROLLED INTERNAL CLAMPING PULSE GENERATOR CONTRAST PRE-ADJUST FOR COLOR