BPW85A Search Results
BPW85A Price and Stock
Vishay Semiconductors BPW85APHOTOTRANSISTOR 450 TO 1080 NM |
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BPW85A | Bulk | 4,099 | 1 |
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Vishay Intertechnologies BPW85APHOTO TRANS. 3MM 25DEG-e4 - Bulk (Alt: 60AC7964) |
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BPW85A | Bulk | 17 Weeks, 3 Days | 1 |
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BPW85A | 934 | 32 |
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BPW85A | 934 | 10 Weeks | 1 |
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BPW85A | Bulk | 977 | 1 |
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BPW85A | Reel | 5,000 | 5,000 |
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BPW85A | 229 | 1 |
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BPW85A | 3,735 |
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BPW85A | 11 Weeks | 5,000 |
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BPW85A | 5,000 |
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Vishay Intertechnologies BPW85AA |
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BPW85AA | 1,500 |
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BPW85AA | 1,200 |
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Others BPW85ACS212AVAILABLE EU |
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BPW85ACS212 | 9,000 |
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Temic Semiconductors BPW85ACS21ZElectronic Component |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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BPW85ACS21Z | 8,000 |
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BPW85A Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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BPW85A | Vishay Intertechnology | Silicon NPN Phototransistor | Original | 87.96KB | 6 | |||
BPW85A | Vishay Telefunken | Phototransistor Module, 1nA Dark Current, 850nm Wavelength | Original | 124.48KB | 6 | |||
BPW85A | Telefunken Electronic | Photo Detectors / Phototransistors / Photo Pin Diodes | Scan | 252.28KB | 5 |
BPW85A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 | |
BPW85
Abstract: BPW85A BPW85B BPW85C Phototransistor bpw 80
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 11-Mar-11 BPW85A BPW85B BPW85C Phototransistor bpw 80 | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
Contextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2002/95/EC. 2011/65/EU. JS709A | |
bpw85cContextual Info: BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 2011/65/EU 2002/95/EC. 2011/65/EU. bpw85c | |
Contextual Info: BPW85, BPW85A, BPW85B, BPW85C www.vishay.com Vishay Semiconductors Silicon NPN Phototransistor FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation |
Original |
BPW85, BPW85A, BPW85B, BPW85C BPW85 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
BPW85C
Abstract: 416 npn phototransistor 8277 bpw 104 BPW85 BPW85A BPW85B Silicon NPN Phototransistor
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BPW85A, BPW85B, BPW85C 2002/95/EC 2002/96/EC BPW85 18-Jul-08 BPW85C 416 npn phototransistor 8277 bpw 104 BPW85A BPW85B Silicon NPN Phototransistor | |
BPW85CContextual Info: Tem ic S e m i c o n d u c t o r s Detectors Photo Transistors .fe-'. . . Photo - Sensitive Package . •: . Cbaraaeristiès jfca^MA V E e/fflW /Ö B ^ C V C Ç -5V , TVpe X => 950 um I r —S mA., X » 950w n) Photo Transistors in Clear Plastic Package |
OCR Scan |
BPW16N BPW17N BPW85A BPW85B BPW85C BPW96A BPW96B BPW96C BPV11 TEMT2100 | |
packagingContextual Info: Packaging and Order Information www.vishay.com Vishay Semiconductors Packaging and Order Information PACKAGING SURVEY RECOMMENDED METHOD OF STORAGE Dry box storage is recommended as soon as the dry bag has been opened to prevent moisture absorption. TABLE 1 - PACKAGING OPTIONS OF |
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TEKS5400S TEKT5400S TSKS5400S BP104 BPW34 BP104S BPW34S BP104S 02-Mar-15 packaging | |
bpw 104
Abstract: bpw 50 BPW85 BPW85A BPW85B BPW85C
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BPW85 BPW85 2002/95/EC 2002/96/EC 08-Apr-05 bpw 104 bpw 50 BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C bpw 104
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BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C bpw 104 | |
c1g smd
Abstract: bpv10nf TEMD2100
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CQY36N CQY37N TSUS4300 TSUS4400 CQX48A CQX48B TSSS2600 TSUS5200 TSUS5201 TSUS5202 c1g smd bpv10nf TEMD2100 | |
bpw 104Contextual Info: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. |
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BPW85 BPW85 D-74025 20-May-99 bpw 104 | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a T-1 Ø 3 mm clear, plastic package. It is sensitive for visible and near infrared radiation. 20815 |
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BPW85 BPW85 2002/95/EC 2002/96/EC BPW85A BPW85B BPW85C | |
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Contextual Info: BPW85 w m m f _ ▼ Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 0 3 mm plastic package. Due to its waterclear epoxy the |
OCR Scan |
BPW85 BPW85 20-May-99 | |
Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
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vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s | |
Contextual Info: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radiation. |
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BPW85 BPW85 D-74025 16-Nov-99 | |
8239
Abstract: Vishay Telefunken Phototransistor BPW85 BPW85A BPW85B BPW85C
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BPW85 BPW85 D-74025 16-Nov-99 8239 Vishay Telefunken Phototransistor BPW85A BPW85B BPW85C | |
BPW85
Abstract: BPW85A BPW85B BPW85C
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BPW85 BPW85 D-74025 16-Nov-99 BPW85A BPW85B BPW85C | |
005MW
Abstract: BPW85
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BPW85 BPW85 D-74025 29-Mar-04 005MW | |
Contextual Info: BPW85 Vishay Semiconductors Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1 ∅ 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near |
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BPW85 BPW85 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
BPW85
Abstract: BPW85A BPW85B BPW85C
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BPW85 BPW85 2002/95/EC 2002/96/ECed 08-Apr-05 BPW85A BPW85B BPW85C | |
Contextual Info: BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1 ø 3 mm plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared |
Original |
BPW85 BPW85 D-74025 16-Nov-99 | |
TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
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OCR Scan |
TLBR5410 TLDR4400 TLDR4900 TLDR5400 TLDR5800 TLHE4900 TLHE5100 TLHE5101 TLHE5102 TLHE5800 TDS05160 TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond |