BPX38 APPLICATION Search Results

bpx38 application

Abstract: BPX38-5 BPX38 BPX38-4
Contextual Info: BPX38 Silicon NPN Phototransistor Description BPX38 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a flat glass window. A superior linearity of photocurrent vs. irradiation makes it ideal for linear applications. A base terminal is available to enable biasing and sensitivity control.

Contextual Info: SIEMENS BPX38 Silicon NPN Phototransistor Characteristics TA=25°C Parameter Sym Wavelength, Max. Sensitivity \sm x 880 FEATUR ES • Expecialty suitable for application* from 450 ran to 1120 nm • High linearity • Hermetically sealed metal package TO-18 ,

bpx38 application

Abstract: BPX38 950nm
Contextual Info: BPX 38 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPX38 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a flat glass window. A superior linearity of photocurrent vs.

BPX38-4

Abstract: s543 A950 O
Contextual Info: Tem ic BPX38 S e m i c o n d u c t o r s Silicon NPN Phototransistor Description B PX 38 is a high sensitive silicon N PN epitaxial planar phototransistor in a standard T O - 18 herm etically sealed m etal case w ith a flat glass window. A superior linearity o f photocurrent vs. irradiation m akes

bpx38 application

Abstract: bpx38-4 BPX38 BPX43
Contextual Info: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

BPX38

Abstract: BPX43 bpx38 application
Contextual Info: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

Contextual Info: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

Contextual Info: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

bpx38 application

Abstract: BPX38 BPX43
Contextual Info: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPX 38 Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 450 nm bis 1120 nm

bpx38

Contextual Info: BPX43 Vishay Semiconductors Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

bpx38 application

Abstract: BPX38 BPX43 BPX38-5
Contextual Info: BPX43 Vishay Telefunken Silicon NPN Phototransistor Description BPX43 is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO–18 hermetically sealed metal case with a glass lens. A superior linearity of photocurrent vs. irradiation

cs5050

Abstract: BPX 38 bpx38
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Chi p p o s it io n Radiant <2 -7 > s e n s it iv e BPX 38 a re a / E C B fmo06018 iS*-' Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified W esentliche M erkmale

JIS B 0406

Abstract: bpx43-6 rt 9045 photo transistor BPX38 BPW77NA BPW76B BPW77
Contextual Info: Tem ic S e m i c o n d u c t o r s Photo Transistors continued Characteristics ; Pboto Area/mm2 Tÿpe Package 4/-q> le a / rnA Ee /B iW /c m 2 • (VCE = 5 V, X =950nm ) tr/jiS Rt/kfi @ Q c»5m A , k — 950 nm) Photo Transistors in Hermetically Sealed Package

lem 732 733

Abstract: SFH 4813
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SRM 90 .291 (7.4) .259 {6.6) .571 m .s \ .208(5.31 .402(12.5) .197(5) .189 (4.8) .181 (4.6) (2541 0.0 1 8 {0.45} .106 (2.7) Chfc Location .220(5.6) J208 (SJ3) N Cathode

SFH 209

Abstract: LM 4812 SFH402 IFT00 BPX66
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 .291 (7.4) .259 (6.6) .571 (14.5) .492(12.5) .209 (5.3) 197 (5.0) Anode W- 0.100 (254) 0 .1 8 9 (4.8) 0.181 (4 6) .018 (0.45) 106 (2 7 ) Glass Lens Chip Location

SFH482

Abstract: BPX66 SFH480 VN 4302
Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 291 (7.4) 259 (6.6) ,571 (14£L .492(12.5) ,2 0 8 (5 .3 ), 197 (5.0) Anode £ 0 . 100 " (2 54)_ 0 .189(4.8) S3.1B1 (4.6) T T T 018^(0 45) .106 (2.7) Glass Lens

SFH482-1/FS2230

Contextual Info: SIEMENS SFH480 SFH481 SFH482 GaAIAs INFRARED EMITTER Package Dimensions in Inches mm SFH480 291 (7 4) 259 (6 6) 571 (14 5) .4 9 2 (1 2 5) ,2 0 8 (5 .3 ) Anode 197 (5 0) A T 0 189 (4 8) 0.100 (2 54) T ~ e 0 181 (4 6) " I -.018'(0 45) 106 (2 7) G lass Lens

SFH400

Contextual Info: bOE D • 6E35bOS D D H b b n Dbl « S I E G SIEMENS SIEMENS ~{3 SFH480 SFH481 SFH482 AKTIENGESELLSCHAF GaAIAs INFRARED EMITTER Package Dimensions in Inches (mm SFH480 291 (7.4) 259(66) 571 114.5) 492(12 5) ¥ 0100 (2 54) 169(4 8) 181(4 6) 208(53) 197 (5)

BPW89

Abstract: S284P BPW21 BPW47B BPW98 BPW84 S213P BPW24R 810 W47A A953
Contextual Info: TELEFUNKEN ELECTRONIC HME ]> B flTEODTb Ü G 1 1 1 7 Q 3 B I a I g G Photo Detectors I I Phototransistors in Clear Plastic Package Phototransistors w ith Filter M atched for GaAs IREDs in Plastic Package Package Type • Characteristics Photo sensitive area

BPW84

Abstract: S288P BPW75 BPW87 BPW28 BPW86 LT 5239 H BPW47B BPW41N IR bpw77
Contextual Info: TEL E FU NK EN E L E C T R O N I C 4ME T> m ÛTEOCnti 0D1117D 3 D1ALGG Photo Detectors Phototransistors in Clear Plastic Package Phototransistors with Filter M atched for G a A s IR ED s in Plastic Package Package Type • C h a ra c te ristic s Photo sensitive

JFET TRANSISTOR REPLACEMENT GUIDE j201

Abstract: UA6538 DC motor speed control using 555 and ir sensor U2740B-FP UAA145 CQY80 U2840B tcrt9050 TCDF1910 sod80 smd zener diode color band
Contextual Info: Semiconductors Technical Library March 1996 Back Products Overview Communications Automotive Computer Industrial Broadcast Media Aerospace & Defense Communications Applications Telephone ICs Type U3750BM–CP Package 44–pin PLCC Function One chip telephone

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

TIL702

Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Contextual Info: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or