BPY 43 Search Results

"PHOTOVOLTAIC CELL"

Abstract: Silicon Group Q60215-Y63-S1 BPY 10
Contextual Info: BPY 63 P BPY 63 P fso06635 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im ● Especially suitable for applications from

PHOTOVOLTAIC CELL

Abstract: Q60215-Y63-S1
Contextual Info: BPY 63 P BPY 63 P fso06635 Silizium-Fotoelement Silicon Photovoltaic Cell Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kathode = Chipunterseite

bp 103-2

Abstract: Q62702-P79-S2 bp 103-5 Q62702-P1641
Contextual Info: Silicon Photodetectors Si-Fotodetektoren 2. Fototransistoren 2. Phototransistors 2.4 2.4 im hermetisch dichten Metallgehäuse Type Package deg. mm2 mA V nm US ±8 0.12 0.5 . 2.5 50 420 . 1130 BPY 62-3 0.8 . 1.6 7 Q60215-Y1112 BPY 62-4 1.25 . 2.5 9

Bpy 43

Abstract: foto transistor Y1112 GMOY6019 Q60215-Y1112 Q60215-Y1113 Q60215-Y5198 Q60215-Y62
Contextual Info: NPN-Silizium-Fototransistor Silicon NPN Phototransistor BPY 62 Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 420 nm bis 1130 nm • Hohe Linearität • Hermetisch dichte Metallbauform TO-18 mit Basisanschluß, geeignet bis 125 °C

bpy 79

Abstract: irl 3034 bestellnummern-verzeichnis Q62702-P1187 bf 478 Q62702-P935 Q62607-S61 sfh siemens SFH415-T siemens Bestellnummern-Verzeichnis
Contextual Info: SIEMENS Typ ‘ vorher Type ('formerly) BP 103 BP 103-2 BP 103-3 BP 103-4 BP 103-5 BP 104 F (*BP 104) BP 104 FS BP 104 S BPW21 BPW 33 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPW 34 BPX 38 B F FA FAS FS S BPX 38-2 BPX 38-3 BPX 38-4 BPX 38-5 BPX 43 BPX 43-2

SIEMENS Phototransistors BPY

Abstract: 2108a siemens dioden SFH-506 SFH100 BPW21 300FA 2108 A SFH 314 SFH-10
Contextual Info: Silicon Photodetectors Si-Fotodetektoren Summary of Types Typenübersicht 1. Integrierter Empfänger Integrated Receiver 2. Fototransistoren Phototransistors ♦ SFH 506 BPX 81 3. SFH 300/FA SFH 313/FA SFH 314/FA BP 103 SFH 302 SFH 305 BPX 83 BP 104 F BPW 34 FA

BPY 10

Abstract: C 82 siemens SFH nm Bpy 43 Q60215-Y65
Contextual Info: Si-Fotodetektoren Silicon Photodetectors 8. Fotodioden für spezielle Anwendungen 8. Photodiodes for Special Applications Tk = 2 5 C r A = 25 C 8.2 Zwei- und Vierfach-Fotodioden Package Radiant sensitive area ? K„ = 5 V , £ v = 1000 Ix, standard light A

fotodiode oe 100

Abstract: siemens SFH nm SFH 462 BPY64 BPW 64 photo siemens germanium transistoren PX60 SIEMENS Phototransistors BPY siemens transistoren germanium
Contextual Info: SIEMENS Typenübersicht Selector Guide Inhaltsverzeichnis Fotodetektoren Contents Photodetectors Page Seite Fotomodul für Fernbedienungen.12 Photomodule for Remote Control Systems. 12

SFH302

Abstract: SFH203 IRF 426
Contextual Info: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode

KTY 88

Abstract: KTY 20-6 Q62902-B152-F222 Q62902-B156-F222 Q62703-N0191 Q62902-B155 Q62702-P1088 Q62702P946 Q62703-N209 Q62902-B155-F222
Contextual Info: Alphanumerische Bestellnummern Q-Nummem Alphanumeric Ordering Codes (Q numbers) Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Bestellnummer Ordering code

Bpy 43

Abstract: BP 103-3 SFH 225 FA BPX 43-3/4 SFH 309-3/4
Contextual Info: SI-FOTODETEKTOREN SILICON PHOTODETECTORS 4. Fototransistoren 4. Phototransistors TA = 25 °C Package TA = 25 °C Type ϕ Radiant sensitive area deg. mm2 IPCE λ = 950 nm, Ee = 0.5 mW/cm2, VCE = 5 V VCEO λ10% mA V nm tr,tf (IC = 1 mA, VCC = 5 V, RL = 1 kΩ)

Q62702-P790

Abstract: Bpy 43 Q62702-P784 Q62702-P787 Q62702-P96 Q62702-P98 SFH402 BPY 62
Contextual Info: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Hergestellt im Schmelzepitaxieverfahren

FP 310

Abstract: Q62902-B155-F222 Siemens LS 3369-fh irl 3034 SCF 5784 KTY 11-5 KTY 20-5 KTY 14-6 Q68000-A7820 LG 57A
Contextual Info: Alphanumerisches Typenverzeichnis Alphanumeric Type Index Achtung: Neue Typenbezeichnung bei Si-Fotodedektoren und Lichtwellenleitern Attention: New type designations for Si-Photodetectors and Fiber-Optic Systems Typ Type Bestellnummer Ordering code 4N25 4N26

Phototransistor bp 101

Abstract: pin photodiode remote control bpy BPY61 rel photoelectric conversion Plastic Encapsulate Diodes phototransistor sensitive to red light silicon metal casing diode BPX62 transistor mm glass lens phototransistor
Contextual Info: Silicon Photovoltaic Cells, Silicon Photodiodes and Phototransistors Appnote 16 Optoelectronic components are increasingly used in modern electronics. The main fields of application are light barriers for production control and safety devices, light control and regulating equipment like twilight switches, fire detectors and facilities

NEC TANTAL

Abstract: Tantal 22uF/16V 10uF/16V tantal CP24 LT1761ES5-3.3 tantal NMR14 1SS294 DD10 DD11
Contextual Info: 5 4 3.3V A0 A1 A2 GND R1 10k 8 7 6 5 VCC WP SCL SDA 2 1 3.3V U2 1 2 3 4 3 3.3V D1 1SS294 R3 ST M24C32 R5 1.5k CP1 10k P 0.1uF 3.3V R4 47 C2 12pF C1 12pF C3 22uF/16V Y1 30MHz R6 D N D 1K DPC 5V 2.5V 3.3V R7 1K R13 4 3 2 1 R10 1.5K 1% R11 39(1%) R12 39(1%)

SFH400

Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPX 38 sfh 400 BPY 62
Contextual Info: SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 fet06092 fet06091 fet06090 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 501 10.95 SFH 400, SFH 401, SFH 402

SFH Siemens

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Cathode SFH 480 Anode (SFH 216, SFH 231 SFH 400) Chip position Radiant Sensitive area o o (O o O) GE006314 : SFH 481 Anode Cathode : SFH 401 O ) o (O o Chip position (2.7) Radiant sensitive area

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Features • Fabricated in a liquid phase epitaxy process • Cathode is electrically connected to the case

OHRD1938

Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

GEO06314

Abstract: GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091

Contextual Info: SIEMENS B P Y 63 P Silizium-Fotoelement Silicon Photovoltaic Cell and s o ld e r p a d s A c tiv e 0 M a x. s o ld e r a re a s and bock A p p ro x . la c q u e r e d a re a on fr o n t s id e fs o 0 6 6 3 5 D io d e GS006635 w e ig h t 0 .2 5 g Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

SFH Siemens

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Chip position 2.7 SFH 400 SFH 401 SFH 402 Cathode (SFH 480 Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area 00.45 i -L 5.3 5.0 7.4 GE006314 O Oí o o (O 6.6 Approx. weight 0.5 g Anode = SFH 481

NMR14

Abstract: BLM21PG600SN1 TANTAL 16V Tantal 22uF/16V B3FS-1002 sw dip-4 DPC 31 SW-DIP-4 1SS294 B3F-1002
Contextual Info: 5 4 3 2 1 D D SCL 3.3V 3.3V 3 2 1 JP1 XJ8C-0311 DPC R1 GPIO7 SW5 R2 10k R3 10k U2 10k B3FS-1002 8 7 6 5 GPIO6 SW4 VCC WP SCL SDA A0 A1 A2 GND 1 2 3 4 3.3V M24C32-WBN6 B3FS-1002 CP1 3.3V 3.3V D1 1SS294 0.1uF R4 1.5k RESET GPIO5 SW1 B3FS-1002 R8 R6 R7 1K R9

diode SR 315

Abstract: BPX65 high sensitive
Contextual Info: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481