GET06013 Search Results

Contextual Info: SIEMENS B P X 65 Silicon Photodiode Dimensions in inches mm .216(5.5) 197 (5.0) .570(14.5) .492(12.5) .200 (5.3) .197(5.0) H 0.100 (2.54) 0.018(0.45) 0 .1 8 9 (4.8) 0 .181 ( 4 .6 ) ' .106 (2.7) Radiant sensitive area Chip Location 218(5.6). .208 (5.3) GET06013

SFH 350 V

Abstract: GEO06314 GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091

diode SR 315

Abstract: BPX65 high sensitive
Contextual Info: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) SFH 480 SFH 481 SFH 482 Radiant Sensitive area L GE006314 o a > o (O o Approx. weight 0.5 g Anode = SFH 481

OHRD1938

Abstract: Q62702-P784 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62 SFH 960
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400, SFH 401, SFH 402 SFH 400 SFH 401 SFH 402 Wesentliche Merkmale • Hergestellt im Schmelzepitaxieverfahren • Kathode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit • Gute spektrale Anpassung an

GEO06314

Abstract: GET06013 GET06091 Q62702-P784 Q62702-P786 Q62702-P787 Q62702-P790 Q62702-P96 Q62702-P98 BPY 62
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g Chip position ø4.8 ø4.6 2.54 mm spacing welded 14.5 12.5 5.3 5.0 6.4 5.6 Anode = SFH 481 Cathode = SFH 401 package 1.1 .9 1 0.9 .1 ø5.6 ø5.3 glass lens GET06091

GEO06314

Abstract: GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665 Q62703-Q1667
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1

foto sensor

Abstract: BPX65 GET06013 Q62702-P27 bpx 65
Contextual Info: Silizium-PIN-Fotodiode Silicon PIN Photodiode BPX 65 Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • BPX 65: Hohe Fotoempfindlichkeit • Hermetisch dichte Metallbauform TO-18 , geeignet bis 125 oC1) Features

SFH Siemens

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 400 SFH 401 SFH 402 Cathode SFH 480 Anode (SFH 216, SFH 231 SFH 400) Chip position Radiant Sensitive area o o (O o O) GE006314 : SFH 481 Anode Cathode : SFH 401 O ) o (O o Chip position (2.7) Radiant sensitive area

Q62703-Q4752

Abstract: diode 482 diode SR 315 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1665 Q62703-Q1668 SFH480 Q62703Q1087
Contextual Info: GaAlAs-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) SFH 480, SFH 481, SFH 482 SFH 480 SFH 481 SFH 482 Wesentliche Merkmale • Hergestellt im Schmezepitaxieverfahren • Anode galvanisch mit dem Gehäuseboden verbunden • Hohe Zuverlässigkeit

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Cathode (SFH 480) Anode (SFH 216, SFH 231 SFH 400) Chip position SFH 480 SFH 481 SFH 482 Radiant Sensitive area o O) o CO o GE006314 2.7 Chip position 00.45 Anode = SFH 481 Cathode = SFH 401

diode SR 315

Abstract: GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663 Q62703-Q1664 Q62703-Q1665
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) welded 14.5 12.5 Chip position (2.7) 5.3 5.0 6.4 5.6 5.5 5.0 1 0.9 .1 ø5.6 ø5.3 GET06091 Radiant sensitive area 1.1 .9 1.1 0.9 ø4.8 ø4.6 ø0.45 glass lens Anode = SFH 481 Cathode = SFH 401

IR photodetectors

Abstract: diode SR 315 E7800 GEO06314 GET06013 GET06091 Q62703-Q1088 Q62703-Q1089 Q62703-Q1662 Q62703-Q1663
Contextual Info: GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters (880 nm) 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g ø4.8 ø4.6 2.54 mm spacing Chip position welded 14.5 12.5 5.3 5.0 6.4 5.6 glass lens Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 1