BR DIODE Search Results

BYV42-200

Abstract: BYV72E-200 BY359-1500 PBYR1540CT PBYR1535CT PBYR10-25 BY359X-1500 BYV42-150 BYV29F500 BYV72F-200
Contextual Info: Philips Semiconductors Index Power Diodes Type Number BR211-140 BR211-160 BR 211-180 BR 211-200 BR211-220 BR211-240 BR 211-260 BR 211-280 Page 30 BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 35 BY229-200 BY229-400

IN6284

Abstract: IN6282 IN647 2190 ctv IN6286A
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473

xaar

Contextual Info: SK150GD066T =' S BR TIA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PI:9 =U S BR TI <I =U S @YR TI <IZ; SEMITOP 4 IGBT Module .5'( WXX P @R@ J =' S YX TI @B@ J CXX J [ BX P =U S @BR TI W _' =' S BR TI @`a J =' S YX TI @RB J BXX

1N6133

Contextual Info: SENSITRON SEMICONDUCTOR 1998 • SHORT FORM CATALOG - Revision AXIAL LEAD / MELF, TRANSIENT VOLTAGE SUPPRESSOR DIODES TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE TEST CURRENT BREAK­ DOWN VOLTAGE WORKING PEAK REVERSE VOLTAGE VRWM ' BR '(BR) MAXIMUM

DIAC

Abstract: diac 5v diac 5v vbo datasheet DIAC br 100 diac DIAC 100/03 DIAC thyristor DIAC BR 100 diac vbo 10V semikron thyristor
Contextual Info: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF

DIAC

Abstract: datasheet DIAC DIAC EQUIVALENT circuit diac 5v vbo DIAC EQUIVALENT diac terminals diac 5v vbo-35 bidirectional diode thyristor diac DIAC DATASHEET
Contextual Info: BR 100/03 LLD . BR 100/04 LLD Surface mount bidirectional Silicon-Trigger-Diodes DIAC Bidirektionale Silizium-Trigger-Dioden für die Oberflächenmontage (DIAC) Breakover voltage Durchbruchsspannung 28 . 45 V Plastic case MiniMELF Kunststoffgehäuse MiniMELF

1N6102A

Abstract: 1N6103A 1N6104A 1N6105A 1N6106A 1N6107A 1N6108A 1N6109A 1N6137A 1N6121A
Contextual Info: 1N6102A thru 1N6137A SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 287, REV - TRANSIENT VOLTAGE SUPPRESSER DIODES AXIAL LEAD and MELF TRANSIENT VOLTAGE SUPPRESSORS, 500W SERIES SERIES TYPE BREAKDOWN VOLTAGE I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE

npn, transistor, sc 107 b

Abstract: MOTOROLA DATE CODE transistor
Contextual Info: MSC2295-BT1* MSC2295-CT1* CASE 318D-03, STYLE 1 COLLECTOR MAXIMUM RATINGS 3 Ï A = 25 C Rating Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage Collector Current-Continuous Symbol Value Unit v (BR)CBO 30 Vdc V(BR)CEO 20 Vdc v (BR)EBO

MSC2404-CT1

Abstract: MSC2404CT1 npn, transistor, sc 107 b
Contextual Info: MSC2404-CT1* CASE 318D-03, STYLE 1 m C OLLECTOR MAXIMUM RATINGS TA = 25"C Symbol Value Unit Collector-Base Voltage Rating V(BR)CBO 30 Vdc Collector-Emitter Voltage V(BR)CEO 20 Vdc Emitter-Base Voltage V(BR)EBO 3 Vdc 'c 15 mAdc Collector Current-Continuous

DIAC

Abstract: datasheet DIAC diac vbo 10V diac 5v vbo bidirectional diode thyristor diac br diac DO41 diac 5v DO-41 DIAC EQUIVALENT circuit
Contextual Info: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current – Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL

diac

Abstract: of DIAC datasheet DIAC diac thyristor DIAC BR 100 diac 5v semikron thyristor DO-204AL br 100 diac DO41
Contextual Info: BR 100/03 DO-41 . BR 100/04 DO-41 Bidirectional Si-Trigger-Diodes DIAC Bidirektionale Si-Trigger-Dioden (DIAC) Breakdown voltage Durchbruchsspannung 28 . 45 V Peak pulse current – Max. Triggerimpuls ±2A Plastic case Kunststoffgehäuse DO-41 DO-204AL

MSB710QT1

Abstract: marking code LG transistors
Contextual Info: MSB710-QT1 MSB710-RT1* CASE 318D-03, STYLE 1 MAXIMUM RATINGS |TA = 25 Cl Rating Value Unit Collector-Base Voltage v BR CBO -3 0 Vdc Collector-Emitter Voltage V(BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'c -5 0 0 mAdc 'C(P) -1 Ade Symbol Max Unit

Bendix Transistors

Abstract: 2N1149 RCA 2n1184a 2N1152 2N1151 2N1150 RCA 2N1174 transitron Emihus 2N1193
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

st3043

Abstract: LOW-POWER SILICON NPN 40352 2N773 ST3042 bsy11 2S001 2SC859
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number hFE V V(BR)CEO - V(BR)CEO Manufacturer TASSOl Ic Max (A) fT (Hz) Cobo Max (F) ICBO Max Y(BR)CBO Po Max Derate at Toper (A) (V) (W) (WrC) eC) Max Package Style >= 400 V, (Cont'd) See Index 1 800 50M 25 14p lOu

Contextual Info: SK100GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK100GH12T4T .5'( @BVV P @BX L =' Q WV SK @VV L CVV L [BV P =T Q @RV SK @V _' =' Q BR SK @VB L =' Q WV SK

Contextual Info: MSD1328-RT1* CASE 318D-03, STYLE 1 M A XIM U M R ATINGS TA = 25 C C O LLEC TO R 3 Rating Symbol Value Unit n Collector-Base Voltage v (BR)CBO 25 Vdc Collector-Emitter Voltage v (BR)CEO 20 Vdc Emitter-Base Voltage v E(BR)BO 12 Vdc Collector Current-Continuous

Contextual Info: MSD602-RT1* CASE 318D-03, STYLE 1 M A XIM U M R ATINGS TA = 25 C Rating Symbol Value Unit V(BR)CBO 30 Vdc Collector-Em itter Voltage V(BR)CEO 25 Vdc Em itter-Base Voltage VE(BR)BO Collector-Base Voltage 7 Vdc 500 mAdc IÇIP) 1 Ade Collector Current-Continuous

PN2222A MOTOROLA

Abstract: valvo emihus philco-ford VALVO GMBH 2SC1330 DIODE 6AA 2N709A Elcoma KT503A
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

2N3609

Abstract: 2N3633 2N3520 2N3618 motorola 2SC1330 transitron 2N3543 KT503A LOW-POWER SILICON NPN 2N3625
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 BO 85 90 95 RN5816 RN5B16 RN5818 RN5818 HSE125 HSE210 HSE171 2Nl051 2N2480 2N2479 Manufacturer V(BR)CEO hFE Ie Max A fT (Hz) Cobo V(BR)CBO Max PD Max Derate

C 56 ph diode

Abstract: PH 21 DIODE ph-12 diode semikron SKa 6/20
Contextual Info: SK50GH12T4T =' Q BR SKA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PK:9 =T Q BR SK <K =T Q @WR SK <KY; SEMITOP 4 IGBT module SK50GH12T4T .5'( @BVV P WR L =' Q WV SK XV L @RV L [BV P =T Q @RV SK @V _' =' Q BR SK RX L =' Q WV SK

Diode SJ 56

Abstract: diode sj pj+939+diode
Contextual Info: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ

Contextual Info: MSB709-RT1* MSB709-ST1 CASE 318D-03, STYLE 1 M A XIM U M RATINGS TA = 25 C Symbol Value U n it Collector-Base Voltage Rating V(BR)CBO -2 5 Vdc Collector-Em itter Voltage v (BR)CEO -2 5 Vdc Emitter-Base Voltage v (BR)EBO -7 Vdc 'C -1 0 0 mAdc 'C(P) -2 0 0

pj 72 diode

Abstract: Diode SJ 12 pj 86 diode Diode SJ
Contextual Info: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ

pj 56 diode

Abstract: semikron 3Y diode PJ diode ph9a
Contextual Info: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ