IN647 Search Results

IN6284

Abstract: IN6282 IN647 2190 ctv IN6286A
Contextual Info: SENSITRON SEMICONDUCTOR 2000 CATALOG TVS 1500 Watt Transient Voltage Suppressor Uni-Directional Diodes 5.6 to 54.0Volts SERIES TYPE BREAKDOWN VOLTAGE V(BR)1 AT I(BR) TEST CURRENT I(BR) WORKING PEAK REVERSE VOLTAGE V 1500W 1N6469 1N6470 IN6471 1N6472 1N6473

diode oa202

Abstract: IN647 OA200 diode TID125 CA500 1S121 1S131 TID140N BY401 IN645
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

MIH SERIES

Abstract: IN6476
Contextual Info: IN6461 thr IN 6468and IN6469 thru IN6476 Mierosemi Corp. SANTA A N A. CA h o i mort- in In r m i ? id y " Q - s 2 : o at ton call: TRANSIENT SUPPRESSORS FEATURES - HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M OST CRITICAL CIRCUITS. • TRIPLE LAYER PASSIVATION.

Contextual Info: IN6461 thr IN6468 and IN6469 thru IN6476 Microsemi Corp. ? Thp diode experts i SANTA A N A , CA F o r m o r e i n f o r m a t i o n call: 714 9 7 9 -8 2 2 0 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.

Contextual Info: IN6461 thri IN6468 and IN6469 thru IN6476 SA.\ IA I V I . C l For more inforni 714 979-8220 I P i l l i FEATURES TRANSIENT SUPPRESSORS • HIGH S U R G E CAP AC ITY PR OV IDES T R A N S IE N T P R O T EC TIO N FOR M O ST C R ITIC A L CIR C U ITS . • T R IP LE LA YER PASSIVATION.

IN6463

Abstract: IN6475 IN6464 IN6476 IN6466
Contextual Info: IN6461 thru IN6468 and IN6469 thru IN6476 Microsemi Corp. Y The dio d e experts SANTA ANA, CA SCOTTSDALE, AZ F o r m o re in fo rm a tio n call: 714 979-8220 TRANSIENT SUPPRESSORS FEATURES • HIGH SURGE CAPACITY PROVIDES TRANSIENT PROTECTION FOR M O ST CRITICAL CIRCUITS.

CV7040

Abstract: cv8790 OA202 equivalent BY 225 diode IS920 DO-35 silicon Rectifier diodes CV8617 CV7875 CV7332 10 35 DIODE
Contextual Info: Diodes and Arrays Hi Device Case Type Outline 1S111 1S113 1S120 1S121 1S130 1S131 1S132 1S134 1S920 1S921 1S922 1S923 1 S924 O A200 O A202 IN645 IN 646 IN647 BY401 BY402 BY403 BY404 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 D O-7 DO-7 DO-35 DO-35 DO-35 DO-35 D O-35 DO-7

IN6478-IN6484

Contextual Info: COMPLETELY ENCAPSULATED BRAZED CONSTRUCTION CAVITY-FREE OPAQUE GLASSPASSIVATED JUNCTION SOLID BRAZING. LOW RESISTANCE EXCELLENT SURGE CAPABILITIES BRAZED-TEMP > 600°C 'G lass-plastic encapsulation technique is covered by PatentNo. 3,996,602 of 1976; brazed -lead assembly b Patent No. 3,930,306 ol 1976 and glass

IN647

Abstract: IN645 CA500 diode oa202 TID125 TID126 TID139N 100v 500ma diode IS113 OA202
Contextual Info: T In e x a s D io de A rra y s P lastic D u a l-In -L in e Package < W orking Voltage 3 Av. Rect. Current General Purpose Diodes Max. Forward Voltage V g. IF IS920 IS921 IS922 IS923 IS924 DO -35 DO -35 DO -35 DO -35 DO -35 200 200 200 200 200 50 100 150 200

IN2222A

Abstract: transitron catalog TCR43 TM106 IN443 1n9448 sv4091 IN4868 diode 3N68 IN536
Contextual Info: ron Tro nsitron electronic corporation e I ron 168 Albion Street . Wakefield. Massachusetts 01881 WAKEFIELD, MASSACHUSE TTS BOSTON, MASSACHUSETTS MELROSE, MASSACHUSETTS NUEVO LAREDO, MEXICO BERKSHIRE, ENGLAND PARIS, FRANCE AMSTERDAM, THE NETHERLANDS ~ ciectl'onic corpOI'atioll