BS12 Search Results

EC19S

Abstract: EC-19S BS120E0F tamurakaken BS120E
Contextual Info: SPEC. No. ED-05 G 104 ISSUE April 28,2005 SHARP OPTO-ELECTRONIC DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR Blue-sensitiVe photodiode MODEL No. BS120E0F Specified for Enclósèd please find copies of the Specifications which consists of 8 pages including cover.

IEEE 1101.2

Abstract: Mizar TMS320C80 military processors mizar 6 Mizar 7772 ti c40 architecture TMS320C44 VME64 SMJ320C40
Contextual Info: Mizar, Inc. 2410 Luna Road Carrollton, TX 75006 USA 214 277-4600 or (800) 635-0800 Fax: (214) 277-4666 e-mail: info@mizarinc.com www: http://www.mizarinc.com Mizar Europe Aztec Centre, Aztec West Almondsbury, Bristol, BS12 4TD United Kingdom +44 (0) 1454 614584

Telefunken ir receiver 38

Abstract: TSOP infrared Telefunken ir receiver BS12 TSOP1736TB1 remote control receiver ir tv ir headphones Telefunken ir receiver 36 TELEFUNKEN tsop1736
Contextual Info: Vishay Telefunken Product Designation and Selection Type Designation Code: The key to understand the type name of the TSOP series: T S OP Vishay Telefunken Specials optional Semiconductors Optoelectronics Photomodules Packing varieties (optional) T = tube, BS12 = reel

TB31214FNG

Contextual Info: TOSHIBA TB31214FNG TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC T BS12 14 FNG PLL FREQUENCY SYNTHESIZER FOR CORDLESS TELEPHONE FEATURES • One packaging PLL, VCO and 1st MIX • Low op e ra tin g voltage : V qq = 2.0~5.5V Ta Ss -10°C , V Cc = 1-9~5.5V

BS120

Abstract: infrared
Contextual Info: BS120 BS120 Photodiie for Vii ~ht I Features 1. Spectral ~nsitivity characteristics akin to that of human eye 2. Compact flat package 3. Low dark current Id : MAX. 10-ll A at • ouKne Dinlensions k I (Unit : mm 5.0*0.2 -— 3 *—I’ -.Elemenl VR=lV)

photodiode CIE eye response

Abstract: BS120
Contextual Info: BS120 Photodiode for Visible Light BS120 • Features ■ Outline Dimensions 1. Spectral sensitivity characteristics akin to that of human eye 2. Compact flat package 3. Low dark current Id : MAX. 10 - 11A at VR = 1V 4. Infrared light cut-off type ( Unit: mm )

S202DS2

Abstract: S202DS4 S102DS2 SHARP S202DS4 s201s01 SHARP S201S02 s201s02 S202DS4 SHARP IS1621 pc111ys
Contextual Info: Obsolete Optoelectronics Products and Replacement Part Numbers Subcategory Model SHARP Replacement Part Detector BS100D BR100C Detector BS100G1 BR100C Detector BS120R BR120 Detector BS521 BR520 Detector GA100T802MZ GA100T802MZ1 Detector GA100T8R1MZ GA100T8R2MZ

SN74ABT3612

Abstract: B1494
Contextual Info: SN74ABT3612 64 x 36 x 2 CLOCKED BIDIRECTIONAL FIRST-IN, FIRST-OUT MEMORY S C BS129F - JULY 1992 - R EVISED FEBRUARY 1996 EFB, FFB, AEB, and AFB Flags Synchronized by CLKB Passive Parity Checking on Each Port Parity Generation Can Be Selected for Each Port

BS120

Abstract: photodiode CIE eye response
Contextual Info: BS120 Photodiode for Visible Light BS120 • Features ■ Outline Dimensions 1. Spectral sensitivity characteristics akin to that of human eye 2. Compact flat package 3. Low dark current Id : MAX. 10 - 11A at VR = 1V 4. Infrared light cut-off type ( Unit: mm )

SOT89A

Abstract: SOT-89A BS123
Contextual Info: BS123, BS623 N-Channel Enhancement Mode DMOS Transistors Features - high input impedance - low gate threshold voltage - low drain-source ON resistance - high-speed switching - no minority carrier storage time - CMOS logic compatible input - no thermal runaway

Contextual Info: SH AR P BS120 Photodiode for Visible Light • Outlne Dimensions ■ Features Unit : mm 1. Spectral sensitivity characteristics akin to that of human eye 2. Compact flat package 3. Low dark current (Id • MAX. 10~nA at V R= 1V) 4. Infrared light cut-off type

Contextual Info: SHARR BS120 Photodiode for Visible Light BS120 • Features ■ Outline Dimensions Unit: mm 1. Spectral sensitivity characteristics akin to that o f human eye 2. Compact flat package 3. Low darkcurrent(Ia: MAX. 10 "A a t V„= IV) 4. Infrared light cut-off type

TB31213FNG

Contextual Info: TOSHIBA TB31213FNG TOSHIBA Bi-CMOS INTEGRATED CIRCUIT SILICON MONOLITHIC T BS12 13 FNG PLL FREQUENCY SYNTHESIZER FOR CORDLESS TELEPHONE FEATURES • One packaging PLL, VCO and 1st MIX • Low operating voltage : V qq = 2.0~5.5V Ta Ss -10°C, V Cc = 1-9~5.5V

S1226-8BK

Abstract: EE-D33 PD44 S1336-18BQ BS120 BS520 EE-D22 NJL612B lk 720 D107-P
Contextual Info: - 256- • ± % 5^ £ N JL 612B BS120 1t £ x *r— M Bf ifil 1£ 9S, ¥ ÖiJ # 14 V CC) 15 -5 5 -1 0 0 560 m a x .5 0 0 600 t y p [fi s) 1 100 0 .0 1 - Topr ty p m m ) 0 .0 0 1 0 .1 4 « j/fe jE i Ffr (V I tV ) - 2 jä ie a : 65 (lx ) !m W ,'cm 2> Im ~r fsj t * £.

laser diode submount

Abstract: ausn submount AuSn solder submount CuW laser 940nm
Contextual Info: Data sheet 120W 9xx nm High Power Laser Diode Bar on Submount BS120C-9xx-01 The Bookham BS120C-9xx-01 laser diode bar on submount series has been designed to provide the increased brightness and reliability required for pumping next generation solid state disk and fiber

DS377

Contextual Info: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.

MN1610

Abstract: CQ 419 MN1630 MN1640 MN1650 panasonic minas BS12 panasonic cq vt BS05
Contextual Info: MN1610 - ? - o n n y \ í= L — j5> M N 1 6 1 0 1 6 tf- y b 1 6 ~ B it 1 I IS (3 2 § iJ B C h ip M i c r o p r o c e s s o r ( 3 - V o lta g e S u p p ly ) ^ /D e s c r ip tio n M N 16 10 i i , Unit I mm > * >v L O C O S >- ') =1 > r - N -f SaJSw

bs18p

Abstract: JST SHF-001T-0.8BS B2P-SHF-1AA E60389 H11P-SHF-AA LR20812 APLMK SHF001-08S
Contextual Info: Crimp 2.5mm NH CONNECTOR Disconnectable Crimp style connectors .098" pitch Features –––––––––––––––––––––––– • Superior folded beam construction (1) This sturdy construction withstands repeated stress, resists

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

sharp laser diodes

Abstract: TSOP855
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-1010 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

transistor s70

Abstract: Marking S70 pin
Contextual Info: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage

rotary coded switch 16 positions

Abstract: 8 position rotary switch panel mount rotary coded switch 10 positions ES-24 rotary switch 16 pin rotary coded switch 3 positions SINGLE POLE 8 POSITION ROTARY SWITCH M10X
Contextual Info: RTBH Series 1-2 Pole Coded Rotary Switches Features/Benefits • Totally sealed • Detent angles, 15 , 22.5 , 30 and 36 • Multi pole • Coding functions • Robust construction • RoHS Compliant Electrical Data Silver Gold SWITCHING MODE: MAX. SWITCHING POWER:

Contextual Info: W MN 1650 ? D = l > f c : z L - '9 M N1650 9 4 h V T ^ - f e * • □ V h u - = 7 3 ^ ig f f l Direct Memory A ccess Controller (3-Voltage Supply) H ISt ^ /D e sc rip tio n MN1650 l± , 16 t '- / I- -*M 7 u zi > ¥ ? . - 7 u? M - 7 t, • y X f i . « / 'f

interposing relay

Abstract: eQFP 64 footprint csr LPT 2 SPI CSR LPT SPI heraeus pd955 LVD LAMP CONVERTOR MAP SCK 164 SCR SN 104 photo ST72311R ST72511R
Contextual Info: ST72311R, ST72511R, ST72532R 8-BIT MCU WITH NESTED INTERRUPTS, EEPROM, ADC, 16-BIT TIMERS, 8-BIT PWM ART, SPI, SCI, CAN INTERFACES • ■ ■ ■ ■ Memories – 16K to 60K bytes Program memory ROM,OTP and EPROM with read-out protection – 256 bytes E2PROM Data memory