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    BS616UV4010EC Search Results

    BS616UV4010EC Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BS616UV4010EC
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF 220.36KB 10
    BS616UV4010EC-10
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF 300.55KB 11
    BS616UV4010EC-70
    		Brilliance Semiconductor Ultra Low Power/Voltage CMOS SRAM 256K x 16 bit Original PDF 300.55KB 11

    BS616UV4010EC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TSOP2-44

    Abstract: BS616UV4010 BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI
    Contextual Info: Preliminary Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4010 „ FEATURES „ DESCRIPTION • Wide Vcc operation voltage : 2.0 ~ 3.6V • Ultra low power consumption : Vcc = 2.2V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current


    Original     		BS616UV4010 120ns 150ns x8/x16 -40oC 8x10mm) TSOP2-44 TSOP2-44 BS616UV4010 BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI PDF

    BS616UV4010

    Abstract: BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI TSOP2-44
    Contextual Info: Ultra Low Power/Voltage CMOS SRAM 256K X 16 bit BSI BS616UV4010 „ FEATURES „ DESCRIPTION • Ultra low operation voltage : 1.8 ~ 3.6V • Ultra low power consumption : Vcc = 2.0V C-grade: 15mA Max. operating current I-grade: 20mA (Max.) operating current


    Original     		BS616UV4010 100ns R0201-BS616UV4010 BS616UV4010 BS616UV4010BC BS616UV4010BI BS616UV4010DC BS616UV4010DI BS616UV4010EC BS616UV4010EI TSOP2-44 PDF