BSP31 Search Results

bsp318s datasheet

Abstract: BSP318S L6327 BSP318S L6327 VPS05163
Contextual Info: Rev 2.1 BSP318S SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated VDS ID Continuous drain current 60 V 0.09 Ω 2.6 A • Logic Level

b0416

Abstract: TO-202AC
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A

Contextual Info: BSP317P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated x Qualified according to AEC Q101 4 Ω -0.43 A Package PG-SOT223 4 Gate pin1 • Halogen­free according to IEC61249­2­21

Contextual Info: Rev 2.1 BSP318S SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated Continuous drain current VDS ID 60 V 0.09 Ω 2.6 A • Logic Level

Contextual Info: Rev 2.0 BSP318S SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated Continuous drain current VDS ID 60 V 0.09 Ω 2.6 A • Logic Level

bsp315p

Contextual Info: BSP315P SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated VDS ID Continuous drain current -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated

Contextual Info: Rev 2.4 BSP318S SIPMOS  Small-Signal-Transistor Features Product Summary • N-Channel Drain source voltage • Enhancement mode • Avalanche rated VDS Drain-Source on-state resistance RDS on Continuous drain current 60 V 0.09 Ω 2.6 A ID • Logic Level

BSS87

Abstract: BSP315 SOT223 BSP171 BSS125
Contextual Info: SIPMOS For complete package outlines, refer to pages PO-1 through PO-6 Low Power MOSFETs Type M axim um Ratings N = N Channel P = P Channel BSP17 BSP88 BSP89 BSP92 BSP 125 BSP129* BSP135* BSP149* BSP171 BSP295 BSP296 BSP297 BSP298 BSP299 BSP315 BSP316 BSP317

PH sot223

Contextual Info: DISCRETE SEMICONDUCTORS BITÂ S y i I T BSP31 ; BSP32; BSP33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 08 Philips Sem iconductors 1999 Apr 26 PHILIPS Philips Semiconductors Product specification PNP medium power transistors

Contextual Info: BSP31T1 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: PART OBSOLETE - USE FZT591 / FZT593 BSP31 BSP33 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSP31 – BSP41 BSP33 – BSP43 PARTMARKING DETAIL – Device type in full C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

BSP43

Abstract: Bsp41
Contextual Info: PART OBSOLETE - USE FZT491 / FZT493 BSP41 BSP43 SOT223 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – NOVEMBER 1995 ✪ COMPLEMENTARY TYPES – C BSP43 - BSP33 BSP41 - BSP31 PARTMARKING DETAIL – E DEVICE TYPE IN FULL C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

IRF7205

Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D087 BSP31; BSP32; BSP33 PNP medium power transistors Product data sheet Supersedes data of 1997 Apr 08 1999 Apr 26 NXP Semiconductors Product data sheet PNP medium power transistors BSP31; BSP32; BSP33 PINNING

Contextual Info: Not Recommended for New Design Please Use FZT591 / FZT593 BSP31 BSP33 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSP31 – BSP41 BSP33 – BSP43 PARTMARKING DETAIL – Device type in full C E C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Philips Semiconductors Product specification PNP medium power transistors BSP31 ; BSP32; BSP33 FEATURES PINNING • High current max. 1 A PIN • Low voltage (max. 80 V). 1 2, 4 APPLICATIONS 3 DESCRIPTION base collector emitter • Telephony and general industrial applications.

BSP315P L6327

Contextual Info: BSP315P SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated VDS ID Continuous drain current -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated

Contextual Info: BSP316P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A PG-SOT223-4-1 Drain pin 2/4 • Qualified according to AEC Q101 Gate pin1 Source pin 3

Contextual Info: SOT223 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ISSU E 3 - NOVEMBER 1995 COM PLEM ENTARY TYPES BSP41 BSP43 Q - BSP 43 - BSP33 B SP41 - BSP31 P A R T M A R K I N G D E T A IL - D E V IC E T Y P E IN F U L L ABSOLUTE M A X IM U M RATINGS. PARAM ETER ! SYM BO L

BSP317P

Abstract: L6327 VPS05163
Contextual Info: BSP317P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -250 V 4 Ω -0.43 A PG-SOT223 Drain pin 2/4 x Qualified according to AEC Q101 4 Gate pin1 3 Source pin 3 Type

P31 SOT223

Abstract: BSP31 BSP33 BSP41 BSP43 transistors sot-223
Contextual Info: BSP31 BSP33 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA • ■ ■ ■ Ordering Code Marking BSP31 P31 BSP33 P33 SILICON EPITAXIAL PLANAR PNP MEDIUM VOLTAGE TRANSISTORS SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING THE NPN COMPLEMENTARY TYPES ARE

BSP31

Abstract: BSP33 BSP41 BSP43
Contextual Info: BSP31 BSP33 SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – BSP31 – BSP41 BSP33 – BSP43 PARTMARKING DETAIL – Device type in full C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BSP31 BSP33 UNIT V Collector-Base Voltage

Contextual Info: BSP316P SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS on • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A PG-SOT223-4-1 Drain pin 2/4 • Qualified according to AEC Q101 Gate pin1 Source pin 3

BSP315P L6327

Contextual Info: BSP315P SIPMOS  Small-Signal-Transistor Features Product Summary • P-Channel Drain source voltage • Drain-Source on-state resistance RDS on Enhancement mode • Avalanche rated VDS ID Continuous drain current -60 V 0.8 Ω -1.17 A • Logic Level • dv/dt rated