BSS1 Search Results

BSS138PW

Abstract: TRANSISTOR SMD CODE PACKAGE SOT323
Contextual Info: BSS138PW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using

BSS123LT1G

Contextual Info: BSS123LT1G, BVSS123LT1G Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 http://onsemi.com 170 mAMPS 100 VOLTS RDS on = 6 W Features • AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G • These Devices are Pb−Free and are RoHS Compliant N−Channel

BSS123W-7-F

Abstract: BSS123W BSS123W-7 J-STD-020A
Contextual Info: BSS123W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: BSS123W Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version

TR40-10

Abstract: SA SOT-23 MARKING CODE 028a sot 23 Q62702-SS12
Contextual Info: BEE D • û23b32G 0017155 5 « S I P SIPMOS N Channel MOSFET SIEMEN S/ SPCL-, SEMICONDS t * " 3 S *- 2S " BSS123 _ ~_ • SIPMOS - enhancement mode • Draln-source voltage Vf>« = 100V • Continuous drain current I o - 0.17A • Draln-source on-reslstance

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

B5G1

Abstract: BSS138
Contextual Info: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products

bss138

Abstract: bss138 MARKING BSS138 SS all diodes ratings DMOS FET marking code SS SOT23 BSS138TA marking ss BSS138/BSS100 TO-92
Contextual Info: A Product Line of Diodes Incorporated BSS138 50V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET IN SOT23 Features and Benefits Mechanical Data • • • • • • • • BVDSS > 50V RDS on ≤ 3.5Ω @ VGS= 5V Maximum continuous drain current ID = 200mA

bss138 MARKING

Abstract: bss138 k38 bss138 MARKING c38 BSS138 BSS138Q BSS138 equivalent BSS138Q-7-F marking k38 K38 mosfet
Contextual Info: BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant Note 1

Contextual Info: MOSFET SMD Type Product specification BSS138 • Features SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● VDS V = 50V +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON) ≤ 3.5Ω (VGS = 10V) 0.4 3 ● ID = 0.22 A 1 0.55 ● RDS(ON) ≤ 6Ω (VGS = 4.5V) 2 +0.1 0.95-0.1

BSS138LT1G

Abstract: BSS138LT1 BSS138LT3 BSS138LT3G
Contextual Info: BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

Contextual Info: BSS138W N-Channel POWER MOSFET 3 DRAIN P b Lead Pb -Free 3 1 2 1 GATE Description: * Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

BSS123

Abstract: SAs sot23 BSS123 L6433 L6327 PG-SOT23 PG-SOT-23
Contextual Info: BSS123 Rev. 1.41 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A PG-SOT23 3 Drain pin 3 • Qualified according to AEC Q101 Gate pin1 2 Source pin 2

DS30366

Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
Contextual Info: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05

bss169

Abstract: E6327 017t Q67000-S322
Contextual Info: BSS169 SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Depletion mode V DS 100 V R DS on ,max 12 Ω 0.09 A I DSS,min • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-plating; RoHS compliant PG-SOT-23

BSS123W

Abstract: BSS123W-7 J-STD-020A
Contextual Info: BSS123W NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating · · · · · Dim Min Max A 0.25

BSS138W

Abstract: BSS138W-7 J-STD-020A marking k38 sot-323
Contextual Info: BSS138W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed A B C G Mechanical Data · · · · · · · · SOT-323 D Case: SOT-323, Molded Plastic

BSS123Q-13

Abstract: DS30366 bss123 c23 K23 SOT23 K23 mOSFET BSS123Q-7
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) ID TA = 25°C 100V 6.0Ω @ VGS = 10V 0.17 • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • N-Channel Enhancement Mode High dense cell design for extremely low RDS ON

Contextual Info: BSS138 Small Signal MOSFET N-Channel 3 DRAIN * “G” Lead Pb -Free Features: SOT-23 3 1 *Low On-Resistance : 3.5 Ω *Low Input Capacitance: 40PF *Low Out put Capacitance : 12PF *Low Threshole :1 .5V *Fast Switching Speed : 20ns GATE 1 2 2 SOURCE Application:

SOT23 marking skS

Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
Contextual Info: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23

BSS119

Abstract: E6327 Q67000-S007 infineon bss119 ID013
Contextual Info: BSS119 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.17 A SOT23 3 Drain pin 3 Gate pin1 2 Source pin 2 1 VPS05161 Type Package Ordering Code

Contextual Info: 32E D • ö23b3S0 ' SIPMOS P Channel MOSFET QQ17177 1 « S IP ^ BSS192 SIEMENS/ SPCL-i SEMICONDS_ _ • SIPMOS - enhancement mode • Draln-source voltage Vb» = -240V • Continuous drain current / D = -0.15A • Draln-source on-resistance

Contextual Info: BSS13 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)5.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500nØ @V(CBO) (V) (Test Condition)

marking code ss

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS138 Features • • • • • • • • N-Channel Enhancement Mode Halogen free available upon request by adding suffix "-HF"