BSS123 SOT23 Search Results

BSS123 spice

Abstract: BSS123 BSS123-7 BSS123-7-F bss123 marking DS30366
Contextual Info: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Fast Switching Speed A Low Input/Output Leakage High Drain-Source Voltage Rating B

Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·

SOT23 K23

Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating SOT-23 A · ·

BSS123 spice

Abstract: K23 SOT23 marking K23 BSS123 K23 SOT23 MARKING BSS123-7 250dk SOT23 K23 bss123 MARKING CODE BSS123-7-F
Contextual Info: BSS123 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODEL: BSS123 Features • · · · · · Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage High Drain-Source Voltage Rating Also Available in Lead Free Version

bss123 marking sa

Contextual Info: Supertex Inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / R d S o n Order Number / Package ' d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* SA* 100V 6.0Q 0.5A BSS123 where * = 2-week alpha date code

Contextual Info: Supertex inc. BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ b v dgs R dS ON (m ax) Id(ON) (m in ) 100V 6.0Q. 0.5A O rder N um ber / Package Product marking for TO-236AB: TO-236AB* SA* BSS123 where = 2-week alpha date code

DS30366

Abstract: K23 SOT23 BSS123 BSS123-7-F BSS123A BSS123 spice
Contextual Info: SPICE MODEL: BSS123 BSS123 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low Gate Threshold Voltage SOT-23 Low Input Capacitance Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 G E 0.45 0.60 H G 1.78 2.05

3V02

Contextual Info: – E ET L O BS BSS123 O –N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code

SOT-23 marking 717

Abstract: SAP SOT23 sot-23 MARKING CODE 718
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6.0Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

SAP SOT23

Abstract: marking SA sot-23 BSS123 BSS123 5A marking 8A sot-23 p-channel SOT-23 20V SOT-23 marking 2a to-236 TO-236AB sot-23 MARKING CODE GS 5
Contextual Info: BSS123 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* SA❋ 100V 6Ω 0.5A BSS123 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

D8541

Abstract: alternative bss123 4446 BSS123 ZXM41N0F ZXM41N10F
Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL Drain-source voltage Drain-gate voltage

Contextual Info: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage

BSS123

Abstract: Philips RDS business MSB003 BP317 MBB692
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSS123 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor

Contextual Info: Obsolete. Alternative is BSS123. SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BSS123A ISSUE 4 – APRIL 1998 FEATURES * BVDSS = 100V * Low Threshold S D PARTMARKING DETAIL – SAA G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage

BSS123

Abstract: SC18 bss123 smd
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA

BSS123 NXP

Abstract: SMD TRANSISTOR A1 SOT23 bss123 smd BSS123,215
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA

Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FET FEATURES BSS123 SYMBOL • ’Trench’ technology • Extremely fast switching • Logic level compatible • Subminiature surface mounting package QUICK REFERENCE DATA

Philips MARKING CODE

Abstract: sot23 02p 2N7002 MARKING 702 sot23 marking code m8p BSS84 MARKING CODE BSN20 MARKING marking pKX sot23 marking M8p 2N7002 PHILIPS SOT323 702 sot23
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 BSN20W M8p M8t BSS84 SP BSS87 BSS123 BSS192 KA SA BST80 BST82 KM 02p

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

BSS100

Abstract: transistor P1 P bSS100 TRANSISTOR DATASHEET bss100 transistor BSS100 TO-92 F1 SOT23 BSS100 equivalent BSS123 transistor bss123
Contextual Info: September 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This

2N7002 MARKING 702

Abstract: 2n7002 MARKING 2N7002 PHILIPS MARKING BSS84 MARKING CODE marking 702 sot23 Philips MARKING CODE BSN20 MARKING sot23 02p PMBF170 pkx codes marking 2N7002
Contextual Info: Philips Semiconductors PowerMOS transistors Marking codes Types in SOT23, SOT89, and SOT323 packages are marked with a code as listed in the following table. TYPE NUMBER MARKING CODE BSN20 M8p BSN20W M8t BSS84 SP BSS87 KA BSS123 SA BSS192 KB BST80 KM BST82

B55123

Abstract: bss123 marking BSS123 BSS100L XBSS123 125C-2
Contextual Info: N-Channel Enhancement Mode Vertical DMOS FET BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low C urrent Drive Ease of Paralleling APPLICATIONS

BSS123

Abstract: BSS100L XBSS123
Contextual Info: calocfic N-Channel Enhancement Mode Vertical DMOS FET CORPORATION BSS100L /BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling

Contextual Info: N-Channel Enhancement Mode Vertical DMOS FET caloric CORPORATION BSS100L/BSS123 FEATURES • • • • • • • Compact Geometry Fast Switching Speeds No Secondary Breakdown Excellent Temperature Stability High Input Impedance Low Current Drive Ease of Paralleling