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    BSS30 Search Results

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    BSS30 Price and Stock

    Nexperia PBSS305PD,115

    TRANS PNP 100V 2A 6TSOP
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    DigiKey PBSS305PD,115 Cut Tape 35,310 1
    • 1 $0.63
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    PBSS305PD,115 Digi-Reel 35,310 1
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    PBSS305PD,115 Reel 33,000 3,000
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    Rochester Electronics PBSS305PD,115 1
    • 1 $0.1553
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    • 100 $0.146
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    Avnet Silica PBSS305PD,115 54 Weeks 3,000
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    EBV Elektronik PBSS305PD,115 54 Weeks 3,000
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    Nexperia PBSS305PZ,135

    TRANS PNP 80V 4.5A SOT223
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    DigiKey PBSS305PZ,135 Cut Tape 3,093 1
    • 1 $0.8
    • 10 $0.539
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    • 1000 $0.26808
    • 10000 $0.24662
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    PBSS305PZ,135 Digi-Reel 3,093 1
    • 1 $0.8
    • 10 $0.539
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    Newark PBSS305PZ,135 Cut Tape 1,605 1
    • 1 $0.214
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    PBSS305PZ,135 Reel 4,000
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    Rochester Electronics PBSS305PZ,135 12,000 1
    • 1 $0.2117
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    TTI PBSS305PZ,135 Reel 4,000
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    Avnet Silica PBSS305PZ,135 10 Weeks 4,000
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    EBV Elektronik PBSS305PZ,135 10 Weeks 4,000
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    Nexperia PBSS306PZ,135

    TRANS PNP 100V 4.1A SOT223
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    DigiKey PBSS306PZ,135 Digi-Reel 3,079 1
    • 1 $0.8
    • 10 $0.539
    • 100 $0.8
    • 1000 $0.26808
    • 10000 $0.24662
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    Mouser Electronics PBSS306PZ,135 6,760
    • 1 $0.64
    • 10 $0.473
    • 100 $0.335
    • 1000 $0.258
    • 10000 $0.211
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    Newark PBSS306PZ,135 Cut Tape 8,289 1
    • 1 $0.64
    • 10 $0.562
    • 100 $0.419
    • 1000 $0.321
    • 10000 $0.321
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    TTI PBSS306PZ,135 Reel 4,000
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    Chip1Stop PBSS306PZ,135 Cut Tape 11,955
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    • 100 $0.155
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    PBSS306PZ,135 Cut Tape 520
    • 1 -
    • 10 $0.36
    • 100 $0.212
    • 1000 $0.176
    • 10000 $0.176
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    EBV Elektronik PBSS306PZ,135 10 Weeks 4,000
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    Nexperia PBSS302PDH

    TRANS PNP 40V 4A 6TSOP
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    DigiKey PBSS302PDH Cut Tape 3,000 1
    • 1 $0.63
    • 10 $0.425
    • 100 $0.63
    • 1000 $0.20743
    • 10000 $0.20743
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    PBSS302PDH Digi-Reel 3,000 1
    • 1 $0.63
    • 10 $0.425
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    PBSS302PDH Reel 3,000 3,000
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    Avnet Americas PBSS302PDH Reel 8 Weeks 6,000
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    Nexperia PBSS305ND,115

    TRANS NPN 100V 1A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey PBSS305ND,115 Digi-Reel 1,745 1
    • 1 $0.49
    • 10 $0.327
    • 100 $0.49
    • 1000 $0.15666
    • 10000 $0.15666
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    PBSS305ND,115 Cut Tape 1,745 1
    • 1 $0.49
    • 10 $0.327
    • 100 $0.49
    • 1000 $0.15666
    • 10000 $0.15666
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    Rochester Electronics PBSS305ND,115 1
    • 1 $0.1103
    • 10 $0.1103
    • 100 $0.1037
    • 1000 $0.0938
    • 10000 $0.0938
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    Avnet Silica PBSS305ND,115 54 Weeks 3,000
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    EBV Elektronik PBSS305ND,115 54 Weeks 3,000
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    BSS30 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS30 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BSS30 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS30 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BSS30 Unknown Transistor Replacements Scan PDF
    BSS306N Infineon Technologies N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 30.0 V; RDS (on) (max) (@10V): 57.0 mOhm; RDS (on) (max) (@4.5V): 93.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS306NH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 2.3A SOT23 Original PDF
    BSS306N H6327 TY Semiconductor MOSFET N-CH 30V 2.3A - SOT-23 Original PDF
    BSS306NH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 2.3A SOT23 Original PDF
    BSS306NL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 2.3A SOT-23 Original PDF
    BSS308PE Infineon Technologies P-Channel MOSFETs; Package: PG-SOT23-3; Package: SOT-23; VDS (max): -30.0 V; RDS (on) (max) (@10V): 80.0 mOhm; RDS (on) (max) (@4.5V): 130.0 mOhm; RDS (on) (max) (@2.5V): -; Original PDF
    BSS308PEH6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2.0A SOT23 Original PDF
    BSS308PE H6327 TY Semiconductor MOSFET P-CH 30V 2.0A - SOT-23 Original PDF
    BSS308PEH6327XTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 2A SOT23 Original PDF
    BSS308PEL6327 Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 2A SOT-23 Original PDF
    BSS308PEL6327HTSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 30V 2A SOT-23 Original PDF

    BSS30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS308PE

    Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


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    PDF BSS308PE PG-SOT-23 L6327: BSS308PE JESD22-A114 L6327 Q101-3 kv 201-t

    BSS306N

    Abstract: SWs SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS306N PG-SOT23 L6327: BSS306N SWs SOT23

    Untitled

    Abstract: No abstract text available
    Text: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


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    PDF BSS308PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327:

    BSS306N

    Abstract: JESD22-A114 L6327 PG-SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS306N PG-SOT23 L6327: BSS306N JESD22-A114 L6327 PG-SOT23

    BSS308PE H6327

    Abstract: No abstract text available
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


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    PDF BSS308PE IEC61249-2-21 PG-SOT-23 PG-SOT23 H6327: BSS308PE H6327

    Untitled

    Abstract: No abstract text available
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS308PE PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327:

    BSS306N

    Abstract: No abstract text available
    Text: Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101


    Original
    PDF BSS306N PG-SOT23 IEC61249-2-21 H6327: BSS306N

    BSS308PE

    Abstract: JESD22-A114 L6327
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101


    Original
    PDF BSS308PE PG-SOT-23 L6327: BSS308PE JESD22-A114 L6327

    BSS306N

    Abstract: L6327 PG-SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original
    PDF BSS306N PG-SOT23 L6327: BSS306N L6327 PG-SOT23

    Untitled

    Abstract: No abstract text available
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS306N PG-SOT23 IEC61249-2-21 H6327:

    Untitled

    Abstract: No abstract text available
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


    Original
    PDF BSS306N IEC61249-2-21 PG-SOT23 H6327:

    BSS306N

    Abstract: JESD22-A114 L6327 PG-SOT23
    Text: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23


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    PDF BSS306N PG-SOT23 L6327: BSS306N JESD22-A114 L6327 PG-SOT23

    GPI04

    Abstract: No abstract text available
    Text: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6


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    PDF BSS308PE LTC6804IG-2 1942B GPI04

    Untitled

    Abstract: No abstract text available
    Text: BSS30 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF BSS30 Freq80M

    PG-SOT23

    Abstract: BSS308PE L6327
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101


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    PDF BSS308PE PG-SOT23 L6327: PG-SOT23 BSS308PE L6327

    f21 diode sot23

    Abstract: f21 diode marking YFs
    Text: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101


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    PDF BSS308PE PG-SOT23 L6327: -200A/ f21 diode sot23 f21 diode marking YFs

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor with extended switching distance NI20-M30-VN6X-H1141 • Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Large detection range ■ DC 4-wire, 10…30 VDC ■ Changeover contact, NPN output ■ M12 x 1 connector Wiring diagram NI20-M30-VN6X-H1141


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    PDF NI20-M30-VN6X-H1141 MW-30 BSS-30 2013-07-13T12 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor NI20U-MT30-AP6X-H1141 • Threaded barrel, M30 x 1.5 ■ Brass, PTFE-coated ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ High switching frequency ■ DC 3-wire, 10…30 VDC ■ NO contact, PNP output


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    PDF NI20U-MT30-AP6X-H1141 BST-30B BSS-30 2013-07-13T06 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor for the food industry NI30U-EM30WD-AN6X-H1141 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4404 ■ ■ Factor 1 for all metals ■ Magnetic field immune ■ For temperatures of - 40 °C to +100 °C ■ ■ ■ ■ NI30U-EM30WD-AN6X-H1141


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    PDF NI30U-EM30WD-AN6X-H1141 MW-30 BSS-30 2013-07-13T05 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor with analog output BI15-M30-LI-EXI • ATEX category II 1 G, Ex-zone 0 ■ ATEX category II 2 D, Ex-zone 21 ■ Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Analog+ ■ Extended operating range ■ 2-wire, 14…30 VDC ■ Analog output


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    PDF BI15-M30-LI-EXI 2013-07-13T04 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor NI15-S30-AD4X • Threaded barrel, M30 x 1.5 ■ Plastic, PA12-GF30 ■ DC 2-wire, 10…65 VDC ■ NO contact ■ Cable connection Wiring diagram Type code Ident no. NI15-S30-AD4X 44592 Rated operating distance Sn Mounting condition Assured sensing range


    Original
    PDF NI15-S30-AD4X PA12-GF30 BST-30B MW-30 BSS-30 2013-07-13T12 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor for the food industry NI30U-EM30WD-VP44X-H1141 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4404 ■ ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ ■ ■ ■ NI30U-EM30WD-VP44X-H1141 1634904


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    PDF NI30U-EM30WD-VP44X-H1141 MW-30 BSS-30 2013-06-14T04 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor BI10U-M30-VN4X • Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ High switching frequency ■ DC 4-wire, 10…65 VDC ■ Changeover contact, NPN output


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    PDF BI10U-M30-VN4X Residua6947216 QM-30 MW-30 BSS-30 2013-07-13T05 D-45472

    Untitled

    Abstract: No abstract text available
    Text: Inductive sensor NI30U-M30-AP6X-H1141 NI30U-M30-AP6X-H1141 1646631 Rated operating distance Sn Mounting condition Assured sensing range Repeatability Temperaturdrift Hysteresis Ambient temperature 30 mm non-flush ð 0,81 x Sn mm ð 2 % of full scale 10 %


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    PDF NI30U-M30-AP6X-H1141 2013-07-13T06 MW-30 BSS-30 D-45472