BSS30 Search Results

BSS308PE

Abstract: JESD22-A114 L6327 Q101-3 kv 201-t
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

BSS306N

Abstract: SWs SOT23
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

Contextual Info: Product specification BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

BSS306N

Abstract: JESD22-A114 L6327 PG-SOT23
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

BSS308PE H6327

Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features ­30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) -2.0 ID A • ESD protected PG-SOT-23 • Qualified according to AEC Q101

BSS306N

Contextual Info: Product specification BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101

BSS308PE

Abstract: JESD22-A114 L6327
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=-10 V 80 mΩ V GS=-4.5 V 130 ID -2.0 • ESD protected A PG-SOT-23 • Qualified according to AEC Q101

BSS306N

Abstract: L6327 PG-SOT23
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

BSS306N

Abstract: JESD22-A114 L6327 PG-SOT23
Contextual Info: BSS306N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 57 mΩ V GS=4.5 V 93 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101 PG-SOT23

GPI04

Contextual Info: 3 2 2 R29 LED5 475 1% B R41 33 2512 VREG R37 33 2512 R5 100 1% C5 C5 OPT Q5 0805 BSS308PE 5 16 17 19 20 C31 10nF S5 21 22 23 Q4 BSS308PE 24 C4 C4 OPT 0805 S4 SDO IB C10 SDI(IC) S10 SCK(ILP) C9 CSB(ILM) S9 ISOMD C8 WDT S8 DRIVE C7 VREG S7 SWTEN C6 VREF1 S6

Contextual Info: BSS30 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

PG-SOT23

Abstract: BSS308PE L6327
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

f21 diode sot23

Abstract: f21 diode marking YFs
Contextual Info: BSS308PE OptiMOS P3 Small-Signal-Transistor Product Summary Features V DS • P-channel R DS on ,max • Enhancement mode • Logic level (4.5V rated) 30 V V GS=10 V 80 mΩ V GS=4.5 V 130 ID -2.1 • ESD protected A PG-SOT23 • Qualified according to AEC Q101

Contextual Info: Inductive sensor with extended switching distance NI20-M30-VN6X-H1141 • Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Large detection range ■ DC 4-wire, 10…30 VDC ■ Changeover contact, NPN output ■ M12 x 1 connector Wiring diagram NI20-M30-VN6X-H1141

Contextual Info: Inductive sensor NI20U-MT30-AP6X-H1141 • Threaded barrel, M30 x 1.5 ■ Brass, PTFE-coated ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ High switching frequency ■ DC 3-wire, 10…30 VDC ■ NO contact, PNP output

Contextual Info: Inductive sensor for the food industry NI30U-EM30WD-AN6X-H1141 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4404 ■ ■ Factor 1 for all metals ■ Magnetic field immune ■ For temperatures of - 40 °C to +100 °C ■ ■ ■ ■ NI30U-EM30WD-AN6X-H1141

Contextual Info: Inductive sensor with analog output BI15-M30-LI-EXI • ATEX category II 1 G, Ex-zone 0 ■ ATEX category II 2 D, Ex-zone 21 ■ Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Analog+ ■ Extended operating range ■ 2-wire, 14…30 VDC ■ Analog output

Contextual Info: Inductive sensor NI15-S30-AD4X • Threaded barrel, M30 x 1.5 ■ Plastic, PA12-GF30 ■ DC 2-wire, 10…65 VDC ■ NO contact ■ Cable connection Wiring diagram Type code Ident no. NI15-S30-AD4X 44592 Rated operating distance Sn Mounting condition Assured sensing range

Contextual Info: Inductive sensor for the food industry NI30U-EM30WD-VP44X-H1141 • Threaded barrel, M30 x 1.5 ■ Stainless steel, 1.4404 ■ ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ ■ ■ ■ NI30U-EM30WD-VP44X-H1141 1634904

Contextual Info: Inductive sensor BI10U-M30-VN4X • Threaded barrel, M30 x 1.5 ■ Chrome-plated brass ■ Factor 1 for all metals ■ Magnetic field immune ■ Extended temperature range ■ High switching frequency ■ DC 4-wire, 10…65 VDC ■ Changeover contact, NPN output

Contextual Info: Inductive sensor NI30U-M30-AP6X-H1141 NI30U-M30-AP6X-H1141 1646631 Rated operating distance Sn Mounting condition Assured sensing range Repeatability Temperaturdrift Hysteresis Ambient temperature 30 mm non-flush ð 0,81 x Sn mm ð 2 % of full scale 10 %