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    Vishay Intertechnologies RWR80S3570BSS74

    EGS-3-80 357 .1% RWR80S3570BS S74 - Tape and Reel (Alt: RWR80S3570BSS74)
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    Avnet Americas RWR80S3570BSS74 Reel 70 Weeks 2,000
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    Vishay Intertechnologies RWR81S1100BSS74

    EGS-1-80 110 .1% RWR81S1100BS S74 - Tape and Reel (Alt: RWR81S1100BSS74)
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    Avnet Americas RWR81S1100BSS74 Reel 70 Weeks 2,000
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    Newark RWR81S1100BSS74 Reel 2,000
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    Vishay Intertechnologies RWR80S3R00BSS74

    EGS-3-80 3 .1% RWR80S3R00BS S74 - Tape and Reel (Alt: RWR80S3R00BSS74)
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    Vishay Intertechnologies RWR81N1000BSS74

    EGN-1-80 100 .1% RWR81N1000BS S74 - Tape and Reel (Alt: RWR81N1000BSS74)
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    Avnet Americas RWR81N1000BSS74 Reel 2,000
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    Vishay Intertechnologies RWR81S49R9BSS74

    EGS-1-80 49.9 .1% RWR81S49R9BS S74 - Tape and Reel (Alt: RWR81S49R9BSS74)
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    Avnet Americas RWR81S49R9BSS74 Reel 70 Weeks 2,000
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    BSS74 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BSS74 Semelab Bipolar PNP Device in a Hermetically Sealed TO18 Metal Package - Pol=PNP / Pkg=TO18 / Vceo=200 / Ic=0.5 / Hfe=35-150 / fT(Hz)=50M / Pwr(W)=0.5 Original PDF
    BSS74 Motorola European Master Selection Guide 1986 Scan PDF
    BSS74 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BSS74 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BSS74 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS74 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BSS74CSM Semelab Bipolar PNP Device in a Hermetically Sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications Original PDF
    BSS74R Semelab High Voltage PNP Silicon Transistor - Pol=PNP / Pkg=TO18 / Vceo=200 / Ic=0.5 / Hfe=35-150 / fT(Hz)=50M / Pwr(W)=0.5 Original PDF
    BSS74S Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BSS74S STMicroelectronics High Voltage Amplifier Scan PDF

    BSS74 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BSS74

    Abstract: jc-70 BSS75 BSS76
    Text: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.


    Original     		PDF BSS74 BSS75 BSS76 BSS74 jc-70 BSS75 BSS76

    BSS74R

    Abstract: No abstract text available
    Text: SEME BSS74R LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO–18 PACKAGE


    Original     		PDF BSS74R 20MHz 300ms BSS74R

    Untitled

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS74 O206AA) 10/30m 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF BSS74CSM 10/30m 17-Jul-02

    BSS74CSM

    Abstract: No abstract text available
    Text: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original     		PDF BSS74CSM 10/30m 2-Aug-02 BSS74CSM

    Untitled

    Abstract: No abstract text available
    Text: BSS71S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary PNP type is the BSS74S.


    Original     		PDF BSS71S BSS71S BSS74S.

    Untitled

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS74 O206AA) 10/30m 19-Jun-02

    transistor C 5386

    Abstract: C 5386 c 5386 with Pin BSS74
    Text: SEME BSS74 LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • Hermetic Metal Package 0.48 (0.019) 0.41 (0.016) dia.


    Original     		PDF BSS74 O-206AA) -200V -50mA -100V -10mA transistor C 5386 C 5386 c 5386 with Pin BSS74

    BSS74S

    Abstract: No abstract text available
    Text: BSS74S HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS74S is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary NPN type is the BSS71S.


    Original     		PDF BSS74S BSS74S BSS71S.

    Untitled

    Abstract: No abstract text available
    Text: S EM E BSS74R LA B MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO–18 PACKAGE


    Original     		PDF BSS74R 20MHz 300ms

    BSS74

    Abstract: No abstract text available
    Text: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products


    Original     		PDF BSS74 O206AA) 10/30m 2-Aug-02 BSS74

    TO-206AA Package

    Abstract: No abstract text available
    Text: , LJnc, Jftifij TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BSS74 MECHANICAL DATA Dimensions in mm (inches) -5.84(0.230), HIGH VOLTAGE PNP SILICON TRANSISTOR 4.95(0.195) 4.52(0.178) 01 T- 0,0,


    Original     		PDF BSS74 O-206AA) -200V -30mA -10mA -20mA TO-206AA Package

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		PDF MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		PDF MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		PDF SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1

    BU104

    Abstract: BSX21 BU103 8SS44
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


    OCR Scan     		PDF BS250CSM4 8SS44 BSS44 BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BU104 BSX21 BU103

    BSS74 MOTOROLA

    Abstract: BSS74 BSS76 BSS75
    Text: BSS74 thru BSS76 MAXIMUM RATINGS Rating BSS 74 Symbol BSS 75 BSS 76 Unit Vdc C o lle cto r-E m itte r V o ltage v CEO -2 0 0 -2 5 0 -3 0 0 C ollector-B ase Voltage v CBO -2 0 0 -2 5 0 -3 0 0 Vdc E m itter-B ase V o ltage v EBO - 5 .0 Vdc C o lle ctor C u rrent — C ontinuous


    OCR Scan     		PDF BSS74 BSS76 O-206AA) -106V BSS74Ã BSS75â BSS76â b3b72S4 BSS74 MOTOROLA BSS75

    BSS71S

    Abstract: 11-IL BSS74S ha 3715
    Text: 30E ÜD31D2C1 T » 'T - 3 7 -lS SGS-THOMSON BSS74S ILO S G S-THOMSON HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS74S is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at


    OCR Scan     		PDF T-37-lS BSS74S BSS74S BSS71S. -30mA BSS71S 11-IL ha 3715

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON M a rn ie ra *® BSS74S HIGH VOLTAGE AMPLIFIER P R E LIM IN A R Y DATA D E S C R IP T IO N The BSS74S is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at


    OCR Scan     		PDF BSS74S BSS74S BSS71S.

    2N2369At

    Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 i2N5415* 2N3637# MM4001 2N3635 2N3634# 2N3495 2N5680 MM4000 MM5007 2N2369At 2N4237 High-Voltage Amplifiers 2N3546 2N4033 2N5679 MOTOROLA 2n5680 motorola 2N3114

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    MM4003

    Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


    OCR Scan     		PDF MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF