BSS74 Search Results

BSS74

Abstract: jc-70 BSS75 BSS76
Contextual Info: DATA SHEET BSS74 BSS75 BSS76 PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications.

BSS74R

Contextual Info: SEME BSS74R LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO–18 PACKAGE

Contextual Info: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

Contextual Info: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BSS74CSM

Contextual Info: BSS74CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

Contextual Info: BSS71S HIGH VOLTAGE AMPLIFIER DESCRIPTION The BSS71S is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary PNP type is the BSS74S.

BU104

Abstract: BSX21 BU103 8SS44
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC

Contextual Info: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS74 MOTOROLA

Abstract: BSS74 BSS76 BSS75
Contextual Info: BSS74 thru BSS76 MAXIMUM RATINGS Rating BSS 74 Symbol BSS 75 BSS 76 Unit Vdc C o lle cto r-E m itte r V o ltage v CEO -2 0 0 -2 5 0 -3 0 0 C ollector-B ase Voltage v CBO -2 0 0 -2 5 0 -3 0 0 Vdc E m itter-B ase V o ltage v EBO - 5 .0 Vdc C o lle ctor C u rrent — C ontinuous

transistor C 5386

Abstract: C 5386 c 5386 with Pin BSS74
Contextual Info: SEME BSS74 LAB MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) FEATURES 12.7 (0.500) min. • Hermetic Metal Package 0.48 (0.019) 0.41 (0.016) dia.

BSS74S

Contextual Info: BSS74S HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS74S is a silicon planar epitaxial PNP transistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at current levels from 100 µA to 100 mA. The complementary NPN type is the BSS71S.

Contextual Info: S EM E BSS74R LA B MECHANICAL DATA Dimensions in mm inches 5.84 (0.230) 5.31 (0.209) HIGH VOLTAGE PNP SILICON TRANSISTOR 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO–18 PACKAGE

BSS74

Contextual Info: BSS74 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar PNP Device. VCEO = 200V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.5A All Semelab hermetically sealed products

BSS71S

Abstract: 11-IL BSS74S ha 3715
Contextual Info: 30E ÜD31D2C1 T » 'T - 3 7 -lS SGS-THOMSON BSS74S ILO S G S-THOMSON HIGH VOLTAGE AMPLIFIER PRELIMINARY DATA DESCRIPTION The BSS74S is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at

Contextual Info: SGS-THOMSON M a rn ie ra *® BSS74S HIGH VOLTAGE AMPLIFIER P R E LIM IN A R Y DATA D E S C R IP T IO N The BSS74S is a silicon planar epitaxial PNP tran­ sistor in Jedec TO-18 metal case. It is designed for high voltage amplifier and switching applications at

2N2369At

Abstract: 2N4237 High-Voltage Amplifiers 2N3546 2N3495 2N4033 MM4001 2N5679 MOTOROLA 2n5680 motorola 2N3114
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

MSC2404

Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage

BF245

Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30

MM4003

Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
Contextual Info: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

stencil

Abstract: BC237 automatic heat detector project report BC393 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and

BC237

Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device