BSS80 Search Results

BSS80 Datasheets (43)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BSS80	Infineon Technologies	PNP Silicon Switching Transistors	Original	PDF	59.17KB	6
BSS80	Kexin	PNP Silicon Switching Transistors	Original	PDF	38.59KB	2
BSS80	Siemens	RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide	Original	PDF	465.63KB	37
BSS80	Siemens	PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)	Original	PDF	183.68KB	6
BSS80	TY Semiconductor	PNP Silicon Switching Transistors - SOT-23	Original	PDF	188.42KB	2
BSS80	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	172.88KB	1
BSS80	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	164.63KB	1
BSS80	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	37.17KB	1
BSS80	Siemens	Components for Surface Mounting 1983/4	Scan	PDF	57.39KB	1
BSS806N	Infineon Technologies	N-Channel Small Signal MOSFETs (20V - 800V); Package: PG-SOT23-3; Package: SOT-23; V_DS (max): 20.0 V; R_{DS (on)} (max) (@10V): -; R_{DS (on)} (max) (@4.5V): -; R_{DS (on)} (max) (@2.5V): 57.0 mOhm;	Original	PDF	247.95KB	9
BSS806NEH6327XTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23	Original	PDF	512.94KB
BSS806NH6327	Infineon Technologies	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 2.3A SOT23	Original	PDF		9
BSS806N H6327	TY Semiconductor	MOSFET N-CH 20V 2.3A - SOT-23	Original	PDF	172.34KB	3
BSS806NH6327XTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23	Original	PDF	233.95KB

BSS806NL6327HTSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 2.3A SOT23	Original	PDF	528.46KB
BSS80B	Infineon Technologies	PNP Silicon Switching Transistor	Original	PDF	59.17KB	6
BSS80B	Infineon Technologies	PNP Silicon Switching Transistor with high current gain	Original	PDF	112.86KB	6
BSS80B	Unknown		Original	PDF	26.56KB	1
BSS80B	Siemens	Cross Reference Guide 1998	Original	PDF	27.35KB	7
BSS80B	Siemens	PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)	Original	PDF	183.68KB	6

BSS80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Product specification BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 IEC61249-2-21 H6327:	PDF
Contextual Info: SMD Type SMD Type Transistors IC Product specification BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1	Original	BSS80 BSS82 OT-23 BSS80	PDF
BSS81C Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82 Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E	Original	BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82	PDF
Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E	Original	BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79	PDF
Contextual Info: PART OBSOLETE SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage	Original	BSS80B BSS80C BSS80C -10mA -10mA	PDF
Contextual Info: BSS806NE OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A • ESD protected • Avalanche rated • Qualified according to AEC Q101	Original	BSS806NE PG-SOT23 IEC61249-2-21 H6327:	PDF
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E	Original	BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80	PDF
Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 IEC61249-2-21 H6327:	PDF
marking CFs sot-23 Abstract: marking BSs sot23 marking BSs sot-23 BSS80 SOT-23 BSS 81 SOT23 Contextual Info: BSS 79, BSS 81 NPN Silicon Switching Transistors 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: BSS80, BSS 82 PNP 2 1 Type Marking Pin Configuration BSS 79B CEs 1=B 2=E 3=C SOT-23 BSS 79C	Original	BSS80, OT-23 VPS05161 EHP00677 EHP00678 Nov-02-1999 marking CFs sot-23 marking BSs sot23 marking BSs sot-23 BSS80 SOT-23 BSS 81 SOT23	PDF
MV SOT23 Abstract: partmarking 6 Cc PARTMARKING at BSS80B BSS80C DSA003681 Contextual Info: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage	Original	BSS80B BSS80C BSS80B BSS80C 150oC -150mA -10mA MV SOT23 partmarking 6 Cc PARTMARKING at DSA003681	PDF
BSS80B Abstract: BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23 Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E	Original	BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS80B BSS79 BSS80 BSS80C BSS81 BSS82 BSS82B BSS82C marking BSs sot23	PDF
Contextual Info: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e	OCR Scan	BSS80B BSS80C BSS80B BSS80C 300jiS.	PDF
BSS806N Abstract: JESD22-A114 L6327 PG-SOT23 dc-005 2.0mm Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 L6327: BSS806N JESD22-A114 L6327 PG-SOT23 dc-005 2.0mm	PDF
BSS80 Abstract: BSS82 SMD 8.2B Contextual Info: Transistors IC SMD Type PNP Silicon Switching Transistors BSS80,BSS82 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low collector-emitter saturation voltage. 0.55 High DC current gain: 0.1mA to 500 mA. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1	Original	BSS80 BSS82 OT-23 BSS80 BSS82 SMD 8.2B	PDF

s8150 Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N IEC61249-2-21 PG-SOT23 H6327: s8150	PDF
BSS806N Abstract: JESD22-A114 L6327 PG-SOT23 DS16 Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 L6327: BSS806N JESD22-A114 L6327 PG-SOT23 DS16	PDF
Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 2.3 ID A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 IEC61249-2-21 L6327:	PDF
BSS79 Contextual Info: BSS79, BSS81 NPN Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E	Original	BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79	PDF
Contextual Info: BSS806NE OptiMOS 2 Small-Signal-Transistor Product Summary Features VDS • N-channel RDS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V VGS=2.5 V 57 mW VGS=1.8 V 82 ID 2.3 A • ESD protected • Avalanche rated • Qualified according to AEC Q101	Original	BSS806NE PG-SOT23 IEC61249-2-21 H6327:	PDF
BSS806N Abstract: L6327 PG-SOT23 Contextual Info: BSS806N OptiMOS 2 Small-Signal-Transistor Product Summary Features V DS • N-channel R DS on ,max • Enhancement mode • Ultra Logic level (1.8V rated) 20 V V GS=2.5 V 57 mΩ V GS=1.8 V 82 ID 2.3 A • Avalanche rated • Qualified according to AEC Q101	Original	BSS806N PG-SOT23 L6327: BSS806N L6327 PG-SOT23	PDF
Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E	Original	BSS80, BSS82 BSS79, BSS81 VPS05161 BSS80B BSS80C BSS82B BSS82C BSS80	PDF
BSS79 Abstract: BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C Contextual Info: BSS80, BSS82 PNP Silicon Switching Transistors 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 NPN 2 1 Type Marking Pin Configuration BSS80B CHs 1=B 2=E 3=C SOT23 BSS80C CJs 1=B 2=E	Original	BSS80, BSS82 BSS79, BSS81 BSS80B BSS80C BSS82B BSS82C BSS80 BSS79 BSS80 BSS80B BSS80C BSS81 BSS82 BSS82B BSS82C	PDF
BDP 284 Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529 Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05	OCR Scan	3-03W 4-03W 5-03W Q62702-A829 Q62702-A859 Q62702-A950 Q62702-A952 Q62702-A608 Q62702-A718 Q62702-A687 BDP 284 BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529	PDF
MLL34 Abstract: m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking BC817-25L BC817-40L Contextual Info: HOTOROLA SC XSTRS/R F HbZ D • b3b?2S4 DDTbSGl 3 ■ M O T b T ^ X l-O S Bipolar Transistors General-Purpose Transistors Pinout: 1-Base, 2-Em itter, 3-Collector Devices are listed in order of descending breakdown voltage. Marking V(BR)CEO Min ■»FE Max	OCR Scan	BC846AT BC846BT BC817-16L BC817-25L BC817-40L BC847AT BC847BT BC847CT BCX70KL BCW72L MLL34 m6 sot-23 pinout sot-23 Marking KN bk sot 23 marking 16 SOT-143 MOTOROLA Cross Reference sot23 MMBT8599 motorola transistor dpak marking	PDF

BSS80 Search Results

BSS80 Datasheets (43)

BSS80 Datasheets Context Search

BSS81C

marking CFs sot-23

MV SOT23

BSS80B

BSS806N

BSS80

s8150

BSS806N

BSS79

BSS806N

BSS79

BDP 284

MLL34