BSS84 PD Search Results

bss84 spice

Abstract: transistor k84 marking code 27a ds30149 BSS84-7-F BSS84 MARKING CODE BSS84 K84 MARKING 2N7002 J-STD-020A
Contextual Info: BSS84 SPICE MODEL: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

transistor k84

Contextual Info: SPICE MODEL: BSS84 BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

SOT-23 marking K84

Abstract: transistor k84 BSS84-7-F bss84 k84
Contextual Info: SPICE MODEL: BSS84 BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Also Available in Lead Free Version A B

Contextual Info: SPICE MODEL: BSS84 BSS84 Lead-free P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · · Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed B C Low Input/Output Leakage G TOP VIEW S Lead Free/RoHS Compliant Note 3

BSS84

Abstract: MOSFET P-Channel sot-23
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA G r e e n L i n e BSS84 Motorola Preferred Device Low rDS on Sm all-S ignal MOSFETs TMOS Single P-Channel Field Effect Transistors ~M r W TMOS ’ P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

BSS84 PD Motorola

Abstract: BSS84 BSS84 phoenix
Contextual Info: MOTOROLA Order this document by BSS84/D SEMICONDUCTOR TECHNICAL DATA  BSS84 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Motorola Preferred Device P–CHANNEL ENHANCEMENT–MODE TMOS MOSFET 3 DRAIN 3 1 2 1 GATE CASE 318–08, Style 21

p-channel SOT-23 K84

Abstract: BSS84 MARKING CODE k84 sot23 marking "td" sot23 k84 transistor sot 23 BSS84
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BSS84 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B G E Mechanical Data · · · ·

BSS84 MARKING CODE

Abstract: bss84 p-channel SOT-23 K84 marking "td" sot23
Contextual Info: BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT SPICE MODEL: BSS84 TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D B G E Mechanical Data · · · ·

p-channel SOT-23 K84

Abstract: bss84 spice ds30149 BSS84 transistor k84 K84 MARKING
Contextual Info: SPICE MODEL: BSS84 BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · · Low On-Resistance Low Gate Threshold Voltage A Low Input Capacitance Fast Switching Speed B Low Input/Output Leakage · · · · C G TOP VIEW S Available in Lead Free/RoHS Compliant Version

BSS110

Abstract: BSS84
Contextual Info: May 2000 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

S10V siemens

Contextual Info: SIPMOS P Channel MOSFET BSS84 • SIPMOS - enhancement mode • Drain-source voltage Ifc* = -50V • Continuous drain current l B = -0.13A • Drain-source on-resistance • Total power dissipation «• .} = 1 0 .0 0 PD = 0.36W Type Marking Ordering cod e for

BSS110

Abstract: BSS84
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS84

Abstract: ROB SOT23 BSS110
Contextual Info: National Semiconductor~ June 1995 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS BSS84 P-CHANNEL MOSFET SOT-23 DESCRIPTION These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry.

BSS110

Abstract: BSS84 CBVK741B019 F63TNR PN2222N
Contextual Info: May 1999 BSS84 / BSS110 P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR DISCONTINUED, FOR NEW DESIGN USE BSS84 Features • · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown Surface Mount Package Ideally Suited

Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363

N-Channel mosfet sot-363

Abstract: BSS84 J-STD-020A MMBT4401 BSS84 MARKING CODE
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY SPICE MODEL: CTA2N1P NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Also Available in Lead Free Version SOT-363

A03 transistor

Abstract: marking A03 BSS84 MMBT4401
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

marking code 27a

Abstract: A03 transistor BSS84 MARKING CODE BSS84 MMBT4401 sot-363 p-channel mosfet
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 A Mechanical Data · · · · · Case: SOT-363, Molded Plastic

p-channel SOT-23 K84

Abstract: marking K84
Contextual Info: BSS84 ADVANCE INFORMATION P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data · ·

marking A03

Abstract: BSS84 MMBT4401 "igss 10 na"
Contextual Info: CTA2N1P COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT • • • • • A Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant Note 2 "Green" Device (Note 3 and 4)

BSS84

Abstract: BSS110
Contextual Info: FAIRCHILD M ay 1999 MICDNDUCTÜR i BSS84 / BSS110 P -Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancem ent mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

BSS84

Abstract: MMBT4401
Contextual Info: SPICE MODEL: CTA2N1P CTA2N1P Lead-free COMPLEX TRANSISTOR ARRAY NEW PRODUCT Features • · · · Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N SOT-363 Lead Free/RoHS Compliant Note 2