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    SMC Corporation of America CY3B50-1130

    CYLINDER, RODLESS, MAGNETICALLY COUPLED, CY3 SERIES
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    RS CY3B50-1130 Bulk 5 Weeks 1
    • 1 $1629.83
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    SMC Corporation of America MBB50-1130Z

    CYLINDER, TIE ROD, MB-Z SERIES
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    RS MBB50-1130Z Bulk 5 Weeks 1
    • 1 $379.02
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    SMC Corporation of America CA2B50-1130Z

    CYLINDER, AIR, TIE ROD, CA2-Z SERIES
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    RS CA2B50-1130Z Bulk 5 Weeks 1
    • 1 $319.19
    • 10 $296.85
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    SMC Corporation of America C96SB50-1130C

    CYLINDER, ISO, TIE ROD, C96 SERIES
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    RS C96SB50-1130C Bulk 5 Weeks 1
    • 1 $341.94
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    SMC Corporation of America CLA2B50-1130-E

    CYLINDER W/FINE LOCK, TIE ROD, CLA2 SERIES
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    RS CLA2B50-1130-E Bulk 5 Weeks 1
    • 1 $708
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    B501130 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MMBT3905

    Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
    Contextual Info: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365


    OCR Scan     		S01130 BCF29 O-236 BCF30 BCW61A 2N1132A 2N2904 2N2905 MMBT3905 MMBT2904 2N2906 to-92 LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905 PDF

    1S44

    Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
    Contextual Info: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200


    OCR Scan     		b501130 T-01-01 1N461A DO-35 1N462A 1N463A 1N659 1S44 1N661 1S920 1N660 1S921 PDF

    SOIC-16

    Abstract: SOIC16 National Semiconductor Discrete catalog
    Contextual Info: bûF. D m b501130 DGBSSMG 755 H N S C 5 Multiple Bipolar Transistors— Quad NATL SEMICON] DISCRETE) li r e l c Device Type VcEfSAT) v r.F !c *T C qb (V) Min (A) Max Min mA MHz Min PF M ax 30 0.5 100 150 200 8 0.4 10 150 CD7 SOIC-16 0.4 10 150 CD3 TO-116


    OCR Scan     		b501130 SOIC-16 O-116 SOIC-16 MMPQ6502 MPQ6502 MMPQ6700 MPQ6700 MMPQ2369 MPQ2369 SOIC16 National Semiconductor Discrete catalog PDF

    NDT453N

    Abstract: JJS-100 A14S
    Contextual Info: June 1996 National Sem icon d uctor" NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDT453N OT-223 bSG113D GO401lb NDT453N JJS-100 A14S PDF

    J111 national

    Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
    Contextual Info: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.


    OCR Scan     		MMBFJ111 MMBFJ112 MMBFJ113 OT-23 D0M0T33 J111 national J112 J113 25CC J111 MMBFJ113 MARK 6C SOT-23 k20a PDF

    diode 8109

    Abstract: DDH0312 NDB7061L NDP7061L W9 diode
    Contextual Info: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using


    OCR Scan     		NDP7061L/ NDB7061L bSD113D 004031b bS01130 diode 8109 DDH0312 NDP7061L W9 diode PDF

    NPN RF Amplifier

    Abstract: y-parameter MMBTH20 MPSH20 U407
    Contextual Info: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A


    OCR Scan     		LSG113Ã b501130 NPN RF Amplifier y-parameter MMBTH20 MPSH20 U407 PDF

    mmbd

    Contextual Info: Semiconductor' FDH / FDLL 600 FDH600 / FDLL600 D iscrete POWER & Signal Technologies National C O L O R B A N D M A R K IN G D EV ICE FDLL600 1ST B A N D RED 2N D B A N D W H IT E LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION


    OCR Scan     		DO-35 LL-34 fdll600 MMBD1201-1205 004D5L1 mmbd PDF

    027Q

    Abstract: NDS336P
    Contextual Info: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		NDS336P --125-C LSD1130 027Q PDF

    27E SOT-23

    Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
    Contextual Info: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e


    OCR Scan     		BCW68G OT-23 b5D1130 LS01130 27E SOT-23 27E 9 sot23 CK200 501MT BCW68G T092 PDF

    l5 transistor PNP

    Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
    Contextual Info: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high


    OCR Scan     		MPSA64 MMBTA64 OT-23 PZTA64 OT-223 004G77S l5 transistor PNP PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64 PDF

    NDB7052L

    Abstract: NDP7052L
    Contextual Info: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using


    OCR Scan     		NDP7052L/ NDB7052L bSD113D NDP7052L PDF

    NDT452P

    Contextual Info: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.


    OCR Scan     		NDT452P 125-c b501130 NDT452P PDF

    NZT6715

    Abstract: TN6715A
    Contextual Info: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.


    OCR Scan     		TN6715A O-226 NZT6715 OT-223 b501130 0Cm07Sb b5D1130 NZT6715 TN6715A PDF

    MMBT2907A

    Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
    Contextual Info: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier


    OCR Scan     		PN2907A MMBT2907A PZT2907A OT-23 OT-223 MMPQ2907 NMT2907 bS0113D DD40ti30 bS01130 MMPQ2907 NMT2907 PN2907A PZT2907A T092 PDF

    NZT6729

    Abstract: TN6729A
    Contextual Info: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.


    OCR Scan     		TN6729A NZT6729 O-226 OT-223 004G745 b5D1130 DM0743 NZT6729 TN6729A PDF

    NDT410EL

    Contextual Info: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		NDT410EL OT-223 004006b NDT410EL PDF

    diode RN 1220

    Abstract: NDT455N diode 561
    Contextual Info: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS


    OCR Scan     		NDT455N OT-223 LSD113D 00401EÃ diode RN 1220 NDT455N diode 561 PDF

    025Q

    Abstract: NDS8425
    Contextual Info: June 1996 National ADVANCE INFORMATION Semiconductor" NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS8425 bS0113G 025Q NDS8425 PDF

    TN6717A

    Abstract: NZT6717
    Contextual Info: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.


    OCR Scan     		NZT6717 OT-223 LS01130 O-226 TN6717A NZT6717 PDF

    NDS9435A

    Contextual Info: N a tio n a l Semiconductor M ay 1996 " NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9435A NDS9435A PDF

    NDS8839H

    Abstract: Complementary MOSFET Half Bridge
    Contextual Info: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    OCR Scan     		NDS8839H bS0113D NDS8839H Complementary MOSFET Half Bridge PDF

    supersot-3

    Abstract: 2T3 transistor NDS335N FR 014 S0113D
    Contextual Info: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		NDS335N OT-23 OT-23) NDS33SN supersot-3 2T3 transistor NDS335N FR 014 S0113D PDF

    MMBTA56

    Abstract: MPSA56 PZTA56
    Contextual Info: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.


    OCR Scan     		PZTA56 OT-223 D0M0774 MMBTA56 MPSA56 PZTA56 PDF