BST G 02 40 Search Results

Contextual Info: 128Mb SDRAM Ordering Information EM 48 8M 16 4 4 V T A – 55 L EOREX Logo EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : Power Blank : Standard L : Low power I : Industrial 40 41 42 43 46 48 F: PB free package Density 16M : 16 Mega Bits 8M : 8 Mega Bits

BT 816 triac

Abstract: ky 202 h thyristor thyristor aeg thyristor BBC CS 8-12 Halbleiterbauelemente DDR ky 201 thyristor tesla typ 202 thyristor thyristor AEG t 10 n 600 thyristor BBC thyristor BBC CS 0,6
Contextual Info: electronica du/dt GT T AV t di/dt Günter Pilz Technische Daten von Thyristoren, Triacs und Diacs electrónica • Band 19G GÜNTER PILZ Technische Daten von Thyristoren, Triacs und Diacs MILITÄRVERLAG DER DEUTSCHEN DEMOKRATISCHEN REPUBLIK I. Auflage {(j) Militär vorlag

ATMEL 706

Abstract: 3012A scrolling led display atmel AT17 AT17A AT17LV010 AT94K ATDH2225 ATST94K ATSTK94
Contextual Info: UART and 2-wire Interface Reconfiguration of the AT94K FPSLIC using an AT17 Series EEPROM Features • Use of the AVR External Interrupt Service C Routine to Initiate Data Transfer from the Graphic User Interface GUI of a Personal Computer • Use of the AVR C Routine with XY-modem Protocol to Receive Configuration Data from

SIEMENS BST h 05 90

Abstract: SIEMENS BST N 35 SIEMENS BST g 02 60 SIEMENS BST h 05 60 SIEMENS BST P SIEMENS BST SIEMENS BST h 05 110 SIEMENS BST l 45 90 160BS SIEMENS BST G 03 60
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1 k & 4k Refresh Fast Page Mode HYB5116160BSJ-50/-60 HYB5116160BSJ-50/-60 HYB3116160BSJ/BST(L)-50/-60 HYB3118160BSJ/BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5117405BSJ/BST-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT HYPER PAGE EDO DYNAMIC RAM Description The TC5117405BSJ/BST is the hyper page (EDO) dynamic RAM organized 4,194,304 word by 4 bits. The TC5117405BSJ/BST utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

ATF1508AS

Abstract: how to use JK flip flop in smart foot switch
Contextual Info: Features • High-density, High-performance, Electrically-erasable Complex • • • • • • • • • • Programmable Logic Device – 128 Macrocells – 5 Product Terms per Macrocell, Expandable up to 40 per Macrocell – 84, 100, 160 Pins – 7.5 ns Maximum Pin-to-pin Delay

p5A MARKING

Abstract: transistor P9d p0102b scr Igt 1mA p9d sot23 P0115AL Marking 0E MARKING P5D rgk 13 1 11 005 01
Contextual Info: P01xxxL  SENSITIVE GATE SCR FEATURES IT RMS = 0.2A VDRM = 100V to 400V Low IGT < 1µA max to < 200µA A G K DESCRIPTION The P01xxxL series of SCRs uses a high performance planar PNPN technology. These parts are intended for general purpose high volume

BST60

Contextual Info: TOSHIBA TC5116405BSJ/BST60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The T C 51 16405BSJ/BST is the new generation dynamic RAM organized 4,194,304 w ord by 4 bits. The T C 51 16405B SJ/ BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

MB81116420

Abstract: mb8114
Contextual Info: August 1994 Edition 1.0 FUJITSU DATA SHEET MB81141620-010/-012/-015 CMOS 2 X 128KX 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 131,072-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81141620 is a CMOS Synchronous Dynamic Random Access Memory

Contextual Info: F-206 SUPPLEMENT .025m BOTTOM SHROUD STRIP S. Mates with: SSW, SSQ, BSW, ESW, ESQ, IDSS, IDSD 1 1 NO. PINS 1 I PER ROW Q BST LEAD STYLE PLATING OPTION ROW OPTION POST HEIGHT -D -X X X =Double Row = “C” 01 thru 36 36 positions standard G — T Specify

01Oct01

Contextual Info: HY5DU283222F 128M 4Mx32 DDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Sep. 02

HY5DU283222F

Abstract: HY5DU283222F-26 HY5DU283222F-28 HY5DU283222F-33 144-BALL
Contextual Info: HY5DU283222F 128M 4Mx32 DDR SDRAM HY5DU283222F This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.2/Sep. 02

C4AK

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842D-75/-102/-10 CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842D is a CMOS Synchronous Dynamic Randotri:Acce$$ -Memory SDRAM containing

Contextual Info: - PRELIM IN ARY- October 1996 Edition 1.0 PRO DUCT PROFILE SHEET FUJITSU : M B 8 1 1 6 4 8 4 2 A-125/-100/-84/-67 CMOS 4 x 2M x 8 SYNCHRONOUS DRAM CMOS 4-BANK x 2,097,152-WORD x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81164842A is a CMOS Synchronous Dynamic Random Access Memory

IC42S16400-7TG

Abstract: t16 r IC42S16400-7T IC42S16400-7BG
Contextual Info: IC42S16400 Document Title 1M x 16Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B 0C Initial Draft Revise DC OPERATING CONDITIONS 1. add -6ns speed grade 2. obsolete 8Mx8 configuration 3. obsolete Low power version 4. obsolete -8ns speed grade

BST60

Contextual Info: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC5116405BSJ/BST-60 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5116405BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5116405BSJ/BST uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,

Contextual Info: .025m BOTTOM SHROUD STRIPS^ M ates with: SSW, SSQ, BSW, ESW, ESQ, IDSS, IDSD LEAD STYLE I NO. PINS 11 PER ROW BST a PLATING OPTION ROW OPTION POST HEIGHT -X X X -R A = “C” 01 thru 36 =Standard Right Angle Specify “230” or “318" standard post length

Contextual Info: - PRELIM IN ARY- October 1996 Edition 1.0 PRO DUCT PROFILE SHEET FUJITSU : M B 8 1 1 6 4 1 6 4 2 A-125/-100/-84/-67 CMOS 4 x 1 M x 16 SYNCHRONOUS DRAM CMOS 4-BANK x 1,048,576-WORD x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB811641642A is a CMOS Synchronous Dynamic Random Access Memory

mb8114

Abstract: Fujitsu DRAM
Contextual Info: August 1994 Edition 1.0 FUJITSU DATA SHEET M B 8 1 1 4 1 6 2 3 -010/-012/-015 CMOS 2 X 128KX 16 SYNCHRONOUS DRAM CMOS 2 BANKS OF 131,072-WORDS x 16-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81141623 is a CMOS Synchronous Dynamic Random Access Memory

SIEMENS BST 68

Abstract: SIEMENS BST P 45 115 SIEMENS BST P SIEMENS BST t SIEMENS BST f 04 SIEMENS BST 5118165 SIEMENS BST Q SIEMENS BST N 35 SIEMENS BST G 03 60
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BS J/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

TC5117405

Contextual Info: DRAM Module AC Conditions No. 31 TC5117405BSJ/BST, TC5117445BSJ/BST TC51V17405BST/BST, TC51V17445BSJ/BST Electrical Characteristics and Recommended AC Operating Conditions Notes 6,7,8 THMxxxxxx-70 MIN MAX MIN MAX UNIT NOTES 104 - 124 - ns - 60 - 70 ns 9, 13, 14

Contextual Info: .025m BOTTOM SHROUD STRIPS^ M ates with: SSW, SSQ, BSW, ESW, ESQ, IDSS, IDSD LEAD STYLE I NO. PINS 11 PER ROW BST a PLATING OPTION ROW OPTION POST HEIGHT -X X X -R A = “C” 01 thru 36 =Standard Right Angle Specify “230” or “318" standard post length

Contextual Info: MEMORY CMOS 2 x 1M x 8 BITS SYNCHRONOUS DYNAMIC RAM MB81117822E-125/-100/-84/-67 CMOS 2 Banks of 1,048,576-WORDS x 8 BITS Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu M B81117822E is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: IC42S16101 Document Title 512K x 16 Bit x 2 Banks 16-MBIT SDRAM Revision History Revision No History Draft Date Remark 0A 0B 0C 0D Initial Draft Change tOH from 2.5 ns to 2.2 ns Add 60 ball(16M SDRAM) VF-BGA package Add Pb-free package August 28,2001 April 15,2002