5118165 Search Results

SPT0305

Abstract: BST50 SMD MARKING CODE RAC HYB3118165 HYB5118165 5118165BSJ-60 5118165BSJ
Contextual Info: 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )

Contextual Info: E2G0151-18-X2 O K I Semiconductor This version: Oct. 1998 M SM 5118165D/DSL 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5118165D/DSL is a 1,048,576-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5118165D/DSL achieves high integration, high-speed operation, and

Contextual Info: TOSHIBA THM3210B5BS/BSG-60/70 PRELIMINARY 1,048,576 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The TH M 3210B5BS/BSG is a 1,048,576 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem ­ bled with 2 pcs of TC 5118165BJ on the printed circuit board. This m odule is optimized for application to the systems which

HM5118165J6

Contextual Info: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26,1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The H M 5118165 offers

5118165

Contextual Info: 5118165 Series 16 M EDO DRAM 1-Mword x 16-bit 1 k Refresh HITACHI ADE-203-636D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi H M 5118165 is a CMOS dynamic RAM organized as 1,048,576-word X 16-bit. It employs the m ost advanced 0.5 Jim CMOS technology for high performance and low power. The H M 5118165 offers

Contextual Info: 5118165 Series 1048576-word x 16-bit Dynamic RAM HITACHI ADE-203-636B Z Rev. 2.0 Nov. 26, 1996 Description The Hitachi 5118165 is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The HM 5118165 offers

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

SIEMENS BST

Abstract: SIEMENS BSt L 45 100 BST50 code marking rah SIEMENS BST 10 20 Q1107 SIEMENS BST H siemens BST H 04 40 SIEMENS BST P SIEMENS BST L
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: ADE-203-373 Z 5118165A/AL Series 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary H I TI MA CU Hm I Rev0° m T he H itachi H M 5118165A /A L is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology

SIEMENS BST 68

Abstract: BST50 3118165 SIEMENS BST Q
Contextual Info: SIEM EN S 1M x 16-Bit Dynamic RAM 1k Refresh Hyper Page Mode-EDO HYB 5118165BSJ/BST-50/-60 HYB 3118165BSJ/BST-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Hyper Page Mode-EDO-operation • Performance:

Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time

e5as

Abstract: HM5118165AJ-7 HM5118165AJ-8 HM5118165ALJ-8 HM5118165ALTT-7 HM5118165ALTT-8 HM5118165ATT-7 HM5118165ATT-8
Contextual Info: &DE“2 3=373 Z H M 5 1 I 8 Î 6 5 A /A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 20,1995 M l n . The H itachi H M 5118165A /AL is a CMOS dynamic RAM organized 1,048,576-word x 16-bit. It employs the most advanced CMOS technology

Contextual Info: 5118165B Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-000 Z Preliminary Rev. 1.0 Dec. 1, 1995 Description The Hitachi HM 5118165B is a CMOS dynamic RAM organized as 1,048,576-word x 16-bit. It employs the most advanced CM OS technology for high performance and low power. The 5118165B offers Extended

Contextual Info: ^ 7 2 4 0 TOSHIBA QQEÛ37B 54T 5118165BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT HYPER PAGE EDO DYNAMIC RAM in Description The T C 5118165BJ/BFT is the hyper page (EDO) dynamic RAM organized 1,048,576 w ords by 16 bits. The TC 5118165BJ/ BFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operat­

5116165

Abstract: 5118165 EDO DRAM
Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 ÍR A C

SOJ42

Contextual Info: SIEMENS HYM 321005S/GS-50/-60 1M X 32-Bit Dynamic RAM Module Hyper Page Mode - EDO Version Advanced Information * SIMM modules with 1 048 576 words by 32-bit organization for PC main memory applications * Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version)

MSM5118165B

Abstract: TSOP 86 Package
Contextual Info: O K I Semiconductor 5118165B_ E2G 0055-17-41 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION 5118165B is a 1,048,576-word x 16-bit dynamic RAM fabricated inOki's silicon-gate CMOS technology. The 5118165B achieves high integration, high-speed operation, and low-power

Contextual Info: HB56H232 Series 2,097,152-word x 32-bit High Density Dynamic RAM Module HITACHI Description The HB56H232 is a 2M x 32 dynamic RAM module, mounted 4 pieces of 16-Mbit DRAM 5118165AJ sealed in SOJ package. The HB56H232 offers Extended Data Out (EDO) Page Mode as a high speed access time.

TC5118165

Abstract: TC5118165BFT
Contextual Info: INTEGRATED TO SH IB A M O S D IG ITA L INTEG RATED CIRCUIT CIRCUIT T C 5 1 1 8 1 6 5 BJ / B F T - 60 T C 5 1 1 8 1 6 5 BJ / BFT - 70 TOSHIBA TECHNICAL TE N TA TIV E D A T A 1 ,0 4 8 ,5 7 6 W O R D x DATA SILICON GATE C M O S 16 BIT HYPER PAGE ED O D Y N A M IC R A M

V53C318160A

Contextual Info: V53C318160A 3.3 VOLT 1M X 16 FAST PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 ns 60 ns 70 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns 35 ns Min. Fast Page Mode Cycle Time, (tPC) 35 ns 40 ns

V53C316165A

Contextual Info: V53C316165A 3.3 VOLT 1M X 16 EDO PAGE MODE CMOS DYNAMIC RAM MOSEL VITELIC HIGH PERFORMANCE 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)

HYB3116165BSJ

Abstract: HYB3118165 HYB3118165BSJ HYB5118165 P-TSOP 5118165BSJ-60
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ-50/-60 HYB5116165BSJ-50/-60 HYB3116165BSJ/(BST(L)-50/-60 HYB3118165BSJ/(BST(L)-50/-60 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 °C operating temperature

27C256AG

Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Contextual Info: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series