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    2SC9014

    Abstract: BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551
    Text: SOT-23 SMD Products Photograph of Products: Performance and Characteristics: NPN Silicon General Purpose Power Transistors Type Ptot Ic VCEO mW (mA) (V) hFE Polar 123 Type Ptot Ic VCEO (mW) (mA) (V) hFE Polar 123 2SC1623L3 225 100 40 60～90 BEC BCW60A 225


    Original     		PDF OT-23 2SC1623L3 BCW60A 2SC1623L4 BCW60B 2SC1623L5 BCW60C 2SC1623L6 BCW60D 2SC1623L7 2SC9014 BEC npn 2SC9013 SOT-23 BTA43 BTA70 BA811 2SC1623L6 BT3904 BTA42 BT5551

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE 25E D • ^53*131 a01b341 3 ■ Surface Mount Devices LOW-NOISE TRANSISTORS NF hFE t y p .a t lc dB pA mln/max* at I c ^ C E mA/V RATINGS TYPE P ACK A G E VCEO V Vc b O V •c mA : VCE sat max. at lc % V mA/mA h typ. MHZ PINOUT 5 SEE


    OCR Scan     		PDF a01b341 BT5089 BC849B BC849C BCF32 BCF33 10/1A/mA BF820 BT5550 BSR19A

    MMBA812M5

    Abstract: MMBT5086
    Text: SAMSUNG SEM ICO N D U CT O R . IN C MMBA812M5 l^ E D J 7^4142 00G7234 S | PNP EPITAXIAL SILICON TRANSISTOR ast-cft T - GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage CoHector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBA812M5 MMBT5086 OT-23

    MMBA811C7

    Abstract: MMBT5086 transistor marking fl VC80
    Text: SAMSUNG SEMICONDUCTOR INC MMBA811C7 14E D §7^4143 0007530 & | PNP EPITAXIAL SILICO N TRANSISTOR DRIVER TRANSISTOR " SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vottage Coitector Current


    OCR Scan     		PDF MMBA811C7_ MMBT5086 OT-23 100MHz MMBA811C7 transistor marking fl VC80

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    JB marking transistor

    Abstract: transistor marking JB transistor 502 marking JB jb transistor MARKING CF vero MMBA812M3 MMBT5086
    Text: SAMSUNG S EMIC ONDUCT OR . INC MMBA812M3 1 4 E _.? §7^41*12 0 0 0 7 2 3 5 :1 PNP EPITAXIAL SILICON T R A N SIST O R ^27 ^ i GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Cotfector-Emltter Voltage


    OCR Scan     		PDF MMBA812M3 T-21-cf MMBT5086 OT-23 JB marking transistor transistor marking JB transistor 502 marking JB jb transistor MARKING CF vero

    transistor t8

    Abstract: BCW69 MMBT5086 T8 SOT23
    Text: SAMSUNG S EMICONDUCTOR IN C S BCW69 1 4 E D J l ? “11 5 D0G 751b 3 | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T8=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage : Collector Current


    OCR Scan     		PDF BCW69 MMBT5086 OT-23 100fiA, transistor t8 T8 SOT23

    14ej

    Abstract: BCW70 MMBT5086 TRANSISTOR MARKING 06 i marking
    Text: SAMSUNG SEMICONDUCTOR 1INC BCW70 I D J| 000751? 5 | PNP EPITAXIAL SILICON TRANSISTOR T-£P - (S. GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta= 2 5 °C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF BCW70 OT-23 MMBT5086 10OfjA, 10fjA, 14ej TRANSISTOR MARKING 06 i marking

    Untitled

    Abstract: No abstract text available
    Text: BCX71K PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature


    OCR Scan     		PDF BCX71K OT-23 BT5086

    2n5087

    Abstract: 2N5086 BT5086 2N5087 equivalent
    Text: S E M IC O N D U C T O R tm 2N5086 2N5087 BT5086 MMBT5087 SOT-23 Mark: 2P/2Q PNP General Purpose Amplifier T his device is designed for low level, high gain, low noise general purpose am p lifier a p p lica tio ns at co lle cto r currents to 50 mA. Sourced from Process 62.


    OCR Scan     		PDF 2N5086 MMBT5086 2N5087 MMBT5087 2N5087 OT-23 BT5086 2N5087 equivalent

    990Q

    Abstract: BCW61D MMBT5086 lb21
    Text: SAMSUNG SEMICONDUCTOR INC; BCW61D 1ME D | 7 ^ 1 4 2 0007515 1 | PNP EPITAXIAL SILICON TRANSISTOR T -A V GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Cottector-Base Voltage CoSector-Emitter Voltage Emitter-Base*Voltage


    OCR Scan     		PDF BCW61D MMBT5086 OT-23 10/jA 990Q lb21

    BCW61A

    Abstract: MMBT5086 482 transistor marking 9900
    Text: SAMSUNG SEMICONDUCTOR INC BCW61A 14E D | 7^4140 0007512 b | PNP EPITAXIAL SILICON TRANSISTOR r a - n GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C i I | ! 1 ! • Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 71fa414S 0007E12 BCW61A OT-23 MMBT5086 482 transistor marking 9900

    BCW61B

    Abstract: MMBT5086
    Text: iSAMS U N G SEMICONDUGTOR IME 0 J ì 'ì b M m a 0007213 fl [_ INC BCW61B PNP EPITAXIAL SILICON TRANSISTOR T -a a -iíL GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS T,=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF BCW61B MMBT5086 OT-23

    MMBT5086

    Abstract: MMBTA70 transistor 571 MARKING VA SOT23
    Text: SA MS UN G SEMICONDUCTOR INC MMBTA70 14E I 7‘1fc>‘1142 00073CU S | PNP EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR f SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF MMBTA70 OT-23 MMBT5086 100hA, 100MHz 100KHz transistor 571 MARKING VA SOT23

    la 4142

    Abstract: MMBA811C6 MMBT5086
    Text: SA MS UN G SEMICONDUCTOR INC MMBA811C6 14E D | 711,4142 □ DO?aati 1 | PNP EPITAXIAL SILICON TRANSISTOR _ J T - 23- DRIVER TRANSISTOR t °i SOT-23 ABSOLUTE MAXIMUM RATINGS (Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF MMBA811C6 OT-23 MMBT5086 100nA, 100MHz la 4142