marking 3t1
Abstract: marking S3 amplifier RV2833B5X
Text: [ I N AMER P H I L I P S / D I S C R E T E DbE D • btS3131 00151b? 1 I RV2833B5X r-3 3 -n MICROWAVE POWER POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
|
OCR Scan
|
PDF
|
RV2833B5X
T-33-N
bS3131
RV2833B5X
Q01S17D
marking 3t1
marking S3 amplifier
|
BUZ15
Abstract: transistor buz IEC134 t03 package transistor pin dimensions
Text: PowerMOS transistor N AMER PHILIPS/DISCRETE BUZ15 ObE t • btS3131 0 0 m S S 4 1 T '3 f'/3 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
BUZ15
bt53i3i
La-11
bb53131
t-39-13
BUZ15
transistor buz
IEC134
t03 package transistor pin dimensions
|
Untitled
Abstract: No abstract text available
Text: bbSBTBl ' O D i m n Q • 2SE D N AMER PHILIPS/DISCRETE J I BD244; BD244A \ B D 2 4 4 B ; BD244C r - 3 5 - 2 S IL IC O N E P IT A X IA L B A S E P O W E R T R A N S IS T O R S P-N-P silicon transistors in a plastic envelope intended for use in general amplifier and switching
|
OCR Scan
|
PDF
|
BD244;
BD244A
BD244C
BD243;
BD243C.
BD244
bh53T31
BD244:
BD244B;
|
Untitled
Abstract: No abstract text available
Text: 25E D N AMER PHI LI PS/ DIS CR ET E bb53T31 0020515 1 • BUK455-600A BUK455-600B PowerMOS transistor 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
bb53T31
BUK455-600A
BUK455-600B
BUK455
-600A
-600B
si10Id
btS3131
|
PHS2403
Abstract: diode t319 IEC134 PHS2401 PHS2402 PHS2404
Text: _ N ANER PHILIPS/DISCRETE _ GbE D PHS2401_ SERIES bbS3T31 0011701 fl • ■ T - O ' l - I 7“ ULTRA FAST RECOVERY DOUBLE RECTIFIERS The PHS2401 series devices are glass-passivated alloy bonded high-efficiency silicon double rectifier
|
OCR Scan
|
PDF
|
PHS2401
PHS2401,
PHS2402,
PHS2403,
PHS2404.
0D117QA
PHS2403
diode t319
IEC134
PHS2402
PHS2404
|
BYV118-35
Abstract: M3174 BYV118 M3178
Text: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
|
OCR Scan
|
PDF
|
bbSBT31
BYV118
BYV118-35
M3174
M3178
|
1N3913
Abstract: 1N3909 1N3910 1N3911 1N3912
Text: AMER PH ILI PS/DISCRE TE TOD D • hbS3T31 001054G S 1N3909 to 1N3913 X FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO—5 metal envelopes, featuring non-snap-off characteristics. They are intended fo r use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifier applications.
|
OCR Scan
|
PDF
|
001054G
1N3909
1N3913
1N3910
1N3911
1N3912
1N3913.
DD1D54S
1N3913
|
TAG thyristor
Abstract: LM267S thyristor tag a2 thyristor TAG 103 BT150 BT thyristor tag 453 400 thyristor BT 200
Text: I I N AUER PHILIPS/DISCRETE bTE D • bbS3T31 00E7E^3 T35 ■ APX b IlbU THYRISTORS Glass-passivated th y ris to r in T 0 -2 2 0 A B envelope, fe a turin g sensitive gate triggering as lo w as 200 ^ A . P a rtic u la rly suitable in applications where high fatigue stresses due to therm al cyclin g and repeated
|
OCR Scan
|
PDF
|
O-220AB
O-22QAB
M2678
TAG thyristor
LM267S
thyristor tag a2
thyristor TAG 103
BT150
BT thyristor
tag 453 400
thyristor BT 200
|
U1020
Abstract: No abstract text available
Text: N AflER P H I L I P S / D I S C R E T E 25E D • bbS3T31 0032331 1 ■ bY32y SERIES A _ T -Q 3 -I7 FAST SOFT-RECOVERY RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. They are intended for use in chopper applications as well as in
|
OCR Scan
|
PDF
|
bbS3T31
bY32y
BY329â
BY329
bbS3ci31
T-03-17
U1020
bS3131
U1020
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbS3*131 0033435 3 • 35E D A BYH29F SERIES ~7Z03^y ULTRA FAST RECOVERY ELECTRICALLY-ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in SOT-186 full-pack envelopes, featuring low forward voltage drop, ultra fast reverse recovery times w ith very low stored charge and softrecovery characteristic. Their electrical isolation makes them ideal fo r mounting on a common heatsink
|
OCR Scan
|
PDF
|
BYH29F
OT-186
BYR29F-600
1506C
T-03-17
bbS3T31
QD32442
btS3131
BYR29F
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE HSE D bb53T31 QDEiaib METAL OXIDE VARISTORS _ i z . ~ i Zinc Oxide Voltage Dependent Resistor U.L. File #E98144 VDE File #14480-4790-1001/A1F DESCRIPTION GENERAL V oltage D(ependent) R(esistor)-varistors-have
|
OCR Scan
|
PDF
|
bb53T31
E98144
14480-4790-1001/A1F
|
M2303
Abstract: M027 qd223 M3-338 BY249F M2296
Text: N AMER PHILIPS/DISCRETE 1:1=53=131 0052353 5 • 25E D BY249F SERIES T -O I-\7 ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended for power rectifier applications. Their electrical isolation makes them ideal for mounting on a common heatsink
|
OCR Scan
|
PDF
|
GQ5S353
BY249F
BY249Fâ
OT-186
DQ223HT
M2303
M2303
M027
qd223
M3-338
M2296
|
Untitled
Abstract: No abstract text available
Text: I N AMER PHILIPS/DISCRETE 25E D • . ^— f , bbSBTBl 0052353 5 ■ BY249F SERIES T - O l- \7 _ , [ ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, intended for power rectifier applications. Their electrical isolation makes them ideal for mounting on a common heatsink
|
OCR Scan
|
PDF
|
BY249F
BY249Fâ
QD253Sfl
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE DOEQbSQ T • E5E D PowerMOS transistor Logic Level FET N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
|
OCR Scan
|
PDF
|
BUK553
BUK553-50A
BUK553-50B
btS3131
00a0bE4
|