BTW38 SERIES Search Results

btw38

Abstract: BTW38 Series
Contextual Info: PHILIPS INTERNATIONAL 7110öEb DGb2417 T2D « P H I N bSE D BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse po larity types (anode to stud) identified by a suffix R: BTW38— 600R to

Contextual Info: N AUER PHILIPS/DISCRETE _ b 'lE - » • bbSS'Gl 0027352 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38—600R to

BTW38-600R

Abstract: BTW38 M1388 600R M1389 btw38 600r M1393
Contextual Info: PHILIPS INTERNATIONAL b5E D • 7110 ö S b QQbSHl? TSD M P H I N BTW 38 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes, intended fo r use in power control circuits e.g. light and m otor control and power switching systems. The series consists o f reverse polarity types (anode to stud) identified by a suffix R: BTW38— 600R to

BTW38

Abstract: BTW38-600R AM-1388 M1386 600R 800R M1389
Contextual Info: N AMER PHILIPS/DISCRETE b'ìE D • bbS3T31 QÜ27352 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silico n th y risto rs in m etal envelopes, intended fo r use in pow er co n tro l circ u its e.g. light and m o to r co n tro l and pow er sw itching systems.

BTW38-600R

Abstract: BTW38 600R 800R 1000R M1386
Contextual Info: N AMER PHILIPS/DISCRETE t.'ìE J> m ^53=131 G027355 3T3 H A P X BTW38 SERIES THYRISTORS Glass-passivated silicon th y ris to rs in m etal envelopes, intended fo r use in pow er c o n tro l c ircu its e.g. lig h t and m o to r c o n tro l and pow er sw itching systems.

BTW42-600R

Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Contextual Info: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

BTW42

Abstract: BTW42-600R
Contextual Info: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

Contextual Info: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

TSM 1250

Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
Contextual Info: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.