BUJ30 Search Results

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ303B Silicon Diffused Power Transistor Product specification March 2002 NXP Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for

Contextual Info: BUJ303CD NPN power transistor 8 November 2012 Product data sheet 1. Product profile 1.1 General description High voltage high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

curve tracer specifications

Contextual Info: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

BUJ303B

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303B GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

BUJ303AX

Contextual Info: TO -2 20F BUJ303AX NPN power transistor Rev. 05 — 3 May 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in a plastic fu ll-p a ck envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ303AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: TO -2 20F BUJ302AX NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT186A TO-220F plastic package. 1.2 Features and benefits

Contextual Info: TO -2 20A B BUJ303A NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

Contextual Info: TO -2 20F BUJ303AX NPN power transistor Rev. 6 — 8 February 2012 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

BUJ302AX

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ302AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: TO -22 0A B BUJ302A NPN power transistor Rev. 02 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

Contextual Info: TO -2 20F BUJ303AX NPN power transistor Rev. 4 — 15 April 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor in a SOT186A TO220F "full pack" plastic package. 1.2 Features and benefits

power electronic transistor

Contextual Info: TO -22 0A B BUJ303A NPN power transistor Rev. 04 — 14 April 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT78 TO-220AB plastic package. 1.2 Features and benefits

Contextual Info: DP AK BUJ303AD NPN power transistor Rev. 1 — 2 September 2011 Product data sheet 1. Product profile 1.1 General description High voltage, high speed planar passivated NPN power switching transistor in a SOT428 DPAK surface mountable plastic package. 1.2 Features and benefits

BUJ302AD

Contextual Info: DP AK BUJ302AD NPN power transistor Rev. 01 — 28 March 2011 Product data sheet 1. Product profile 1.1 General description High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT428 DPAK surface mounted package. 1.2 Features and benefits

Contextual Info: Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in T0220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control

Contextual Info: Philips Semiconductors Objective specification Silicon Diffused Power Transistor BUJ301A GENERAL DESCRIPTION H igh-voltage, high-speed planar-passivated npn pow er sw itching tra n sisto r in T 0 2 2 0 A B envelope intended fo r use in high freq ue n cy electronic lighting ballast applications, converters, inverters, sw itching regulators, m otor control